Conference -International
  • ◆ 2011

  • ◆ 2010

    • Katsuhisa Yoshida, Yoshitaka Okada and Nobuyuki Sano, "Self-Consistent Drift-Diffusion Approach for Analysis Intermediate band Solar Cells", 25th Europian Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 1DV.2.73, Valencia, September 6-10, 2010.
    • Katsuhisa Yoshida, Yoshitaka Okada and Nobuyuki Sano, "Self-Consistent Drift-Diffusion Analysis of Intermediate Band Solar Cell (IBSC): Effect of Energetic Position of IB on Conversion Efficiency", 35th IEEE Photovoltaic Specialists Conference, Honolulu, June 20-25, 2010
  • ◆ 2009

    • Takahiko Karasawa, Kohei Nakanishi and Nobuyuki Sano, "Discrete Impurity and Mobility in Drift-Diffusion Simulations for Device Characteristics Valiability", 2009 International Semiconductor Device Research Symposium (ISDRS 2009), College Park, December 9-11, 2009 [Proc. ISDRS, p.TP4-02 (2009)].
    • Kohei Nakanishi, Tadayoshi Uechi and Nobuyuki Sano, "Self-Consistent Monte Carlo Device Simulations Under Nano-Scale Device Structures: Role of Coulomb Interaction, Degeneracy, and Boundary Condition", International Electron Devices meeting (IEDM-2009), Baltimore, December 7-9, 2009 [IEDM Tech. Digest, p.79 (2009)].
    • Katsuhisa Yoshida, Yoshitaka Okada and Nobuyuki Sano, "Numerical Analysis of Electron Transport in Quasi Quantum Dot Superlattice", Workshop on Information, Nano and Photonics Technology 2009 (WINPTech2009), Kobe University, December 1-2, 2009.
    • Nobuyuki Sano, "Simulation of Electron Transport in Si Nano Devices", G-COE PICE International Symposium on Silicon Nano Devices in 2030 - Prospects by World's Leading Scientists, Tokyo Institute of Technology, October 13-14, 2009.
  • ◆ 2008

    • Kenji Natori, "Compact Modeling of Ballistic Nanowire MOSFETs", International Conference on Solid State Devices and Materials (SSDM-2008), Tsukuba, September 24-26, 2008 [Proc. SSDM, pp.40-41 (2008)].
    • Nobuyuki Sano, Tadayoshi Uechi and Takayuki Fukui, "3D Monte Carlo Simulations of Nano-scale Devices: Impact of Coulomb Interaction on Device Characteristics" International Conference on Solid State Devices and Materials (SSDM-2008), Technical Seminar, Tsukuba, September 23, 2008.
  • ◆ 2007

    • Tatsuya Yamada and Nobuyuki Sano, "Effects of Gate-Edge Metamorphoses (GEM) on Device Characteristics of Scaled MOSFETs", 2007 International Semiconductor Device Research Symposium (ISDRS 2007), College Park, December 12-14, 2007 [Proc. ISDRS, p.WP8-01 (2007)].
    • Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano, "Electron Transport Simulations Including Full Coulomb Interaction in Si", International Workshop on Computational Electronics (IWCE-12), Amherst, October 8-10, 2007 [Proc. IWCE, pp.102-103 (2007)].
    • Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano, "3D Monte Carlo Analysis ofpotential Fluctuations under High Electron Concentrations", International Workshop on Computational Electronics (IWCE-12), Amherst, October 8-10, 2007 [Proc. IWCE, pp.128-129 (2007)].
    • Shuichi Toriyama and Nobuyuki Sano, "Scaling Dependence of Electron Transport in Nano-scale Shottky Barrier MOSFETs", International Workshop on Computational Electronics (IWCE-12), Amherst, October 8-10, 2007 [Proc. IWCE, pp.141-142 (2007)].
    • Suguru Sato, Hiroyuki Kusaka, and Nobuyuki Sano, "Consistency of Boundary Conditions in Nonequilibrium Green's Function Simulations", International Workshop on Computational Electronics (IWCE-12), Amherst, October 8-10, 2007 [Proc. IWCE, pp.205-206 (2007)].
    • Shuichi Toriyama and Nobuyuki Sano, "Schottky Barrier MOSFETs as Resonant Tunneling Devices", International Conference on Solid State Devices and Materials (SSDM-2007), Tsukuba, September 19-21, 2007 [Proc. SSDM, pp.48-49 (2007)].
    • Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano, "3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes", 15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15), Tokyo, July 23-27, 2007 [Proc. HCIS-15, p.89 (2007)].
    • Kenji Natori, "High Field Transport in Semiconductors by Transmission Formalism", 15-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-15), Tokyo, July 23-27, 2007 [Proc. HCIS-15, p.93 (2007)].
  • ◆ 2006

    • Hiroyuki Kusaka and Nobuyuki Sano, "Detailed Balance in Quasi-Ballistic Electron Transport under Nanoscale Device Structures", International Conference on Solid State Materials and Devices (SSDM-2006), Yokohama, September 13-15, 2006 [Proc. SSDM, pp.356-357 (2006)].
    • Shuichi Toriyama, Daisuke Hagishima, Kazuya Matsuzawa, and Nobuyuki Sano, "Device Simulation of Random Dopant Effects in Ultra- small MOSFETs Based on Advanced Physical Models", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2006), Montley, September 6-8, 2006 [Proc. SISPAD, pp.145-146 (2006)].
    • Tadayoshi Uechi and Nobuyuki Sano, "Hot Electrons Associated with the Long-Range Coulomb Interaction under the High-Density Regime", 2006 VLSI-TSA Technology Symposium, Hsinshu, Taiwan, April 24-26, 2006 [Proc. 2006 VLSI-TSA, pp.141-142 (2006)].
  • ◆ 2005

    • Shuichi Toriyama, Kazuya Matsuzawa, and Nobuyuki Sano, "Gate Tunneling Current Fluctuations Associated with Random Dopant Effects", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2005), Tokyo, September 1-3, 2005 [Proc. SISPAD, pp.23-26 (2005)].
    • (INVITED) Nobuyuki Sano, "Electron Transport in Nanoscale Semiconductor Devices: Ballistic vs. Quasiballistic", 2005 VLSI-TSA Technology Symposium, Hsinshu, Taiwan, April 25-27, 2005 [Proc. 2005 VLSI-TSA, pp.58-61 (2005)].
    • (INVITED) Nobuyuki Sano and Hiroyuki Kusaka, "Electron Transport and Particle-based Simulations for Nanoscale Semiconductor Devices", 2005 International Meeting for Future of Electron Devices, Kansai , Kyoto, April 11-13, 2005 [Proc. 2005 IMFEDK, pp.25-26 (2005)].
  • ◆ 2004

    • T. Hatakeyama, T. Watanabe, K. Kojima, N. Sano, K. Shiraishi, M. Kushibe, S. Imai, T. Shinohe, T. Suzuki, T. Tanaka, and K. Arai, " Impact Ionization Coefficients in Silicon Carbite", Materials Science Forum, 457-460, p.673 (2004).
    • Kazuya Matsuzawa and Nobuyuki Sano, "Stable Simulation of Impurity Fluctuation for Contact Resistance and Schottky Diodes", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2004), Munich, September 2-4, 2004 [Proc. SISPAD, pp.231-234 (2004)].
  • ◆ 2003

    • (INVITED) Nobuyuki Sano, "Electron Kinetic Transport under Localized Impurities: How Could Localized Impurities be Incorporated in Simulations?", 9-th IMACS Seminar on Monte Carlo Methods (MCM-2003), Berlin, Germany, September 15-19, 2003 [Proc. IMACS MCM-2003, pp.5-6 (2003)].
    • Shuichi Toriyama and Nobuyuki Sano, "Probability Distribution Functions of Threshold Voltage Fluctuations due to Random Impurities in Deca-nano MOSFETs", 4-th International Symposium on Nanostructures and Mesoscopic Structures (nanoMES-2003), Tempe, USA, February 17-21, 2003 [Proc. nanoMES, p.FP2 (2003)].
  • ◆ 2002

  • ◆ 2001

    • Kenji Natori, Tomo Shimizu, and Nobuyuki Sano, " Minimum Value of the Specific Contact Resistance of Si-Metal Contacts: the Origin and the magnitude", International Conference on Solid State Devices and Materials (SSDM-2001), Tokyo, September 26-28, 2001 [Proc. SSDM, pp.388-389 (2001)].
    • Takashi Kurusu and Nobuyuki Sano, "Mobility Degradation by Long-Range Potential Fluctuations in Impure Bulk Semiconductors", 12-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-12), Santa Fe, USA, August 27-31, 2001 [Proc. HCIS, p.1-25 (2001)].
    • Nobuyuki Sano, "Atomistic Effects on Transport Characteristics: Threshold Voltage Variations by Discrete Random Dopants", The Progress in Electromagnetics Research Symposium (PIERS-2001), Osaka, July 18- 22, 2001 [Proc. PIERS, p.403 (2001)].
    • Hiroyuki Yamamoto, Yoshimitsu Okada and Nobuyuki Sano, "Quantitative Prediction of Threshold Voltage Fluctuations in Sub-100 nm MOSFETs by a New Dopant Model", 59-th Device Research Conference (DRC-2001), Notre Dame, USA, June 25-27, 2001 [Proc. DRC, pp.171-172 (2001)].
    • (INVITED) Nobuyuki Sano, Kazuya Matsuzawa, Akira Hiroki, and Noriaki Nakayama, "Discrete Random Dopants and Vth Fluctuations in Sub-100 nm MOSFETs", Si Nanoelectronics Workshop (SNW-2001), Kyoto, June 10-11, 2001 [Proc. SNW-2001, pp.48-49 (2001)].
    • (INVITED) Nobuyuki Sano, "Device Physics and TCAD: Simulation Issues for Sub-100 nm Devices", 14-th SEMICON Korea Technical Symposium 2001, Seoul, Korea, January 31-February 2, 2001 [Proc. SEMICON Korea Tech. Symp, pp.473-484 (2001)].
  • ◆ 2000

    • Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, and, Noriaki Nakayama, "Role of Long-Range and Short-Range Coulomb Potentials in Threshold Characteristics under Discrete Dopants in Sub-0.1 um Si-MOSFETs", IEEE International Electron Devices Meeting (IEDM-2000), San Francisco, December 11-13, 2000 [IEDM Tech. Digest, pp.275-278 (2000)].
    • Kazuya Matsuzawa, Nobuyuki Sano, Kenji Natori, Mikio Mukai, and, Noriaki Nakayama, "Monte Carlo Simulation of Current Fluctuation at Actual Contact", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-2000), Seattle, September 6-8, 2000 [Proc.SISPAD, pp. 233-236 (2000)].
    • Nobuyuki Sano, Masaaki Tomizawa, and Kenji Natori, "Statistical Threshold Fluctuations in Si-MOSFETs: Jellium vs. Atomistic Dopant Variations", International Conference on Solid State Devices and Materials (SSDM-2000), Sendai, August 29-31, 2000 [Proc. SSDM, pp.216-217 (2000)].
    • Nobuyuki Sano, "Quantum Effects and Limits in Device Scaling", Workshop on Advanced Electronic Device Simulation, (Seattle、USA、2000).
  • ◆ 1999

    • Nobuyuki Sano, Kenji Natori, Mikio Mukai, and Kazuya Matsuzawa, "Influence of Intrinsic Current Fluctuation in Very Small Si-MOSFETs", International Conference on Solid State Devices and Materials (SSDM-99), Tokyo, September 21-24, 1999 [Proc. SSDM, pp.22-23 (1999)].
    • (INVITED) Nobuyuki Sano, "Sub-0.1 um Device Simulation Technology: Another Problems for Monte Carlo Simulations", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-99), Kyoto, September 6-8, 1999 [Proc. SISPAD, pp.23-26 (1999)].
    • Andrea Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, and Nobuyuki Sano, "Quantum versus Classical Scattering in Semiconductor Charge Transport", 11-th International Conference on Nonequilibrium Carrier Transport in Semiconductors (HCIS-11), Kyoto, July 19-23, 1999 [Proc. HCIS, p.86 (1999)].
  • ◆ 1998

    • Nobuyuki Sano, Massimo V. Fischetti, and Steven E. Laux, "Hole-Initiated Impact Ionization and Split-Off Band in Ge, Si, GaAs, InAs, and InGaAs", International Workshop on Computational Electronics (IWCE-98), Osaka October 19-22, 1998 [Proc. IWCE, pp.198-201 (1998)].
    • Nobuyuki Sano, Kenji Natori, Mikio Mukai, and Kazuya Matsuzawa, "Physical Mechanism of Current Fluctuation under Ultra-small Device Structures", International Workshop on Computational Electronics (IWCE-98), Osaka October 19-22, 1998 [Proc. IWCE, pp.112-115 (1998)].
  • ◆ 1997

  • ◆ 1996

    • (INVITED) Nobuyuki Sano, "Device LifeTime Uncertainty Associated with Intrinsic Anisotropy of Impact Ionization in Si-MOSFET's", 6-th International Electron Devices and Materials Symposia (IEDMS-96), Hsinchu, Taiwan, December 16-20, 1996 [Proc. IEDMS, D4-1 pp.313-320 (1996)].
    • Massimo V. Fischetti, Nobuyuki Sano, Steven E. Laux, and Kenji Natori, "Full-Band Monte Carlo Simulation of High-Energy Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs", International Conference on Simulation of Semiconductor Processes and Devices (SISPAD-96), Tokyo, September 2-4, 1996 [Proc. SISPAD, pp.43-44 (1996)].
    • Kenji Natori and Nobuyuki Sano, "The Resonant Tunneling Mode of a Single Electron Transistor", International Conference on Solid State Devices and Materials (SSDM-96), Yokohama, August 26-29, 1996 [Proc. SSDM, pp.452-454 (1996)].
    • Kenji Natori and Nobuyuki Sano, "Resonant Tunneling Through a Semiconductor Quantum Dot", International Conference on Superlattices, Microstructures and Microdevices (ICSMM-96), Liege, Belgium, July 14-19, 1996 [Proc of ICSMM-96, Thp-84 (1996)].
  • ◆ 1995

    • (INVITED) Nobuyuki Sano, "Quantum Kinetic Transport", 4-th International Workshop on Computational Electronics (IWCE-4), Tempe, USA, October 30-November 2, 1995 [Proc. IWCE, p.1 (1995)].
    • (INVITED) Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Impact Ionization in Submicron and Sub-0.1 Micron Si-MOSFET's", 9-th International Conference on Hot Carriers in Semiconductors (HCIS-95), Chicago, USA, July 31-August 4, 1995 [Hot Carriers in Semiconductors, edited by K. Hess, J. P. Leburton, and U. Ravaioli (Plenum, New York, 1996), pp.337-342].
  • ◆ 1994

  • ◆ 1993

    • (INVITED) Nobuyuki Sano, "Energy Broadening Associated with Finite Collision Duration in Hot Carrier Transport in Semiconductors", International Workshop on VLSI Process and Device Modeling (VPAD-93), Nara, May 14-15, 1993 [Proc. VPAD, pp.162-165 (1993)].
  • ◆ 1992

    • Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Nonlocality of Impact Ionization Processes under Inhomogeneous Electric Fields: A Full-Band Monte Carlo Approach", International Conference on Computer Applications to Materials Science and Engineering (CAMSE-92), Yokohama, September 22-25, 1992 [Computer Aided Innovation of New Materials II, edited by M. Doyama, J. Kihara, M. Tanaka, and R. Yamamoto, (Elsevier, Amsterdam, 1993), pp.1595-1598].
    • Toshihiro Itoh, Nobuyuki Sano, and Akira Yoshii, "Transport Properties of Ballistic Quantum Wire", International Conference on Solid State Devices and Materials (SSDM-92), Tsukuba, August 26-28, 1992 [Proc. SSDM, pp.753-755 (1992)].
    • Nobuyuki Sano and Akira Yoshii, "Quantum Effects on Electron-Phonon Interaction under High Electric Field in Semiconductors", 7-th International Conference on Hot Carrier in Semiconductors (HCIS-91), Nara, July 1-5, 1991 [Semicond. Sci. Technol. 7B, pp.36-38 (1992)].
  • ◆ 1991

    • (INVITED) Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon", International Conference on Solid State Devices and Materials (SSDM-91), Yokohama, August 27-29, 1991 [Proc. SSDM, pp.456-458 (1991)].
  • ◆ 1990

    • Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Monte Carlo Simulation of Ionization Phenomena in Si-MOSFET's", International Conference on Computer Applications to Materials Science and Engineering (CAMSE-90), Tokyo, August 28-31, 1990 [Computer Aided Innovation of New Materials, edited by M. Doyama, T. Suzuki, J. Kihara, and R. Yamamoto, (Elsevier, Amsterdam, 1991), pp.745-748].
    • Nobuyuki Sano, Takahiro Aoki, Masaaki Tomizawa, and Akira Yoshii, "Physical Mechanism of Impact Ionization in Si : A Monte Carlo Analysis", International Workshop on VLSI Process and Device Modeling (VPAD-90), Kawasaki, August 20-21, 1990 [Proc. VPAD, pp.34-35 (1990)].
  • ◆ 1989

  • ◆ 1988

  • ◆ 1987

    • J. Fukai and Nobuyuki Sano, "Tree Growth Simulation Associated with Dielectric Breakdown", IEEE Conference on Electrical Insulation and Dielectric Phenomena (CEIDP-87), Gaithersburg, USA, October 18-22, 1987, [Proc. CEIDP, pp.432-439 (1987)].