Paper
  • ◆ 2011

    • Nobuyuki Sano, "Monte Carlo Study of the Coulomb Interaction in Nanoscale Silicon Devices", Japanese Journal of Applied Physics, 50, 010108 (2011).
    • Nobuyuki Sano, "Impact of the Coulomb interaction on nano-scale silicon device characteristics", Journal of Computational Electronics, 10, 98 (2011).
  • ◆ 2010

    • Katsuhisa Yoshida, Yoshitaka Okada and Nobuyuki Sano, "Self-Consistent Simulation of Intermediate Band Solar Cells: Effect of Occupation Rate on Device Characteristics", Applied Physics Letters, 97, 133503 (2010)
  • ◆ 2009

    • M. V. Fischetti, S. Jin, T.-W. Tang, P. Asbeck, Y. Taur, S. E. Laux, M. Rodwell and N. Sano, "Scaling MOSFETs to 10 nm: Coulomb effects, source starvation, and virtual source model", Journal of Computational Electronics, Volume 2, Number 2, pp.60-77 (2009)
    • Hiroyuki Ikeda and Nobuyuki Sano, "Analysis of photo-induced drain current in Polycrystalline-Silicon Thin-fFlm Transister", Japan Journal of Applied Physics, 48, 101201 (2009).
  • ◆ 2008

    • Kenji Natori, "Compact Modeling of Ballistic Nanowire MOSFETs", IEEE Trans. Electron Devices, 55, pp.2877-2885 (2008).
    • Shuichi Toriyama and Nobuyuki Sano, "Schottky Barrier MOSFETs as Resonant Tunneling Devices", J.Comp. Phys., 7, pp.471-474 (2008).
    • Takayuki Fukui, Tadayoshi Uechi, and Nobuyuki Sano, "Three-Dimensional Monte Carlo Simulation of Electron Transport in Si Including Full Coulomb Interaction", APEX, 1, 051407 (2008).
    • Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano, "3D Monte Carlo Analysis of Potential Fluctuations under High Electron Concentrations", J.Comp. Phys., 7, pp.240-243 (2008).
    • Kenji Natori, "High-field transport in semiconductors by transmission formalism", phy. stat. sol. (c). 5, 111 (2008).
    • Tadayoshi Uechi, Takayuki Fukui, and Nobuyuki Sano, "3D Monte Carlo Simulations including Full Coulomb Interaction under High Electron Concentration Regimes", phy. stat. sol.(c), 5, pp.102-106 (2008).
  • ◆ 2007

    • 佐野伸行、"ナノスケール半導体構造における準弾道電子輸送"、応用物理学会誌10月号、pp.1135-1141 (応用物理学会、2007).
  • ◆ 2006

    • K. Natori, "ナノメートルCMOSデバイスの課題と展望"、電気学会論文誌C. 126, 690 (2006).
    • T. Kurusu and K. Natori, "Numerical study on ballistic n+-n-n+ diode by Monte Carlo simulation: Influence of energy relaxation of hot electrons in drain region on ballistic transport", Jpn. J. Appl. Phys. 45, 1548 (2006).
  • ◆ 2005

    • K. Natori, N. Wada and T. Kurusu, "New Monte Carlo simulation technique for quasi-ballistic transport in ultrasmall metal oxide semiconductor field-effect transistor", Jpn. J. Appl. Phys. 44, 6463 (2005).
    • K. Natori, Y. kimura and T. Shimizu, "Characteristics of a carbon nanotube field-effect-transistor analyzed as a ballistic nanowire field-effect-transistor", J. Appl. Phys. 97, 034306 (2005).
    • Nobuyuki Sano, "Kinetic Study of Quasi-Ballistic Electron Transport in Nanoscale Semiconductor Devices", Electronic Communications in Japan, 88, pp.1-9 (2005).
    • 佐野伸行, "極微細半導体素子における準弾道電子輸送の運動論的考察," 電子情報通信学会論文誌, J88-C, pp.261-269 (2005).
    • Takamitsu Ishihara and Nobuyuki Sano, "Coulomb and Phonon Scattering Processes in Metal-Oxide-Semiconductor Inversion Layers: Beyond Matthiessen's Rule", Jpn. J. Appl. Phys., 44, pp.1682-1686 (2005).
  • ◆ 2004

    • Nobuyuki Sano, "Kinetics of Quasiballistic Transport in Nanoscale Semiconductor Structures: Is the Ballistic Limit Attainable at Room Temperature?", Phys. Rev. Lett., 93, pp. 246803_1-4 (2004).
    • N. Sano, "Kinetic Study of Velocity Distributions in Nanoscale Semiconductor Devices under Room-Temperature Operation", Appl. Phys. Lett., 85, pp.4208-4210 (2004).
    • Osamu Takeuchi, Masahiro Aoyama, Ryuji Oshima, Yoshitaka Okada, Haruhiro Oigawa, Nobuyuki Sano, Hidemi Shigekawa, Ryuji Morita, and Mikio Yamashita, "Probing Subpicosecond Dynamics Using Pulsed Laser Combined Scanning Tunneling Microscopy", Appl. Phys. Lett., 85, pp.3268-3270 (2004).
    • T. Hatakeyama, T. Watanabe, T. Shinohe, K. Kojima, K. Arai, and N. Sano, "Impact Ionization Coefficients in Silicon Carbite", Appl. Phys. Lett., 85, pp.1380-1382 (2004).
  • ◆ 2003

    • K. Natori, T. Shimizu and T. Ikenobe, "Multi-subband effects on performance limit of nanoscale MOSFETs", Jpn. J. Appl. Phys. 42, 2063 (2003).
    • Yoshiyuki Kitahara, Shigeyuki Takagi, and Nobuyuki Sano, " Statistical Study of Subthreshold Characteristics in Polycrystalline Silicon Thin-Film Transistors", J. Appl. Phys., 94, pp.7789-7795 (2003).
    • Shuichi Toriyama and Nobuyuki Sano, " Probability Distribution Functions of Threshold Voltage Fluctuations due to Random Impurities in Deca-nano MOSFETs", Physica E, 19, pp.44-47 (2003).
    • Yoshiyuki Kitahara, Shuichi Toriyama, and Nobuyuki Sano, "A New Grain Boundary Model for Drift-Diffusion Device Simulations in Polycrystalline Silicon Thin-Film Transistors", Jpn. J. Appl. Phys., 42, pp.L634-L636 (2003).
  • ◆ 2002

    • K. Natori, "Ballistic MOSFETs reproduces current-voltage characteristics of an experimental device", IEEE Electron device letters. 23, 655 (2002)
    • Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, and Noriaki Nakayama, "On Discrete Random Dopant Modeling in Drift-Diffusion Simulations: Physical Meaning of `Atomistic' Dopants", Microelectronics Reliability, 42, pp.189-199 (2002).
    • Takashi Kurusu and Nobuyuki Sano, "Signi?cance of the Long-range Part of the Coulomb Potential on the Mobility in Impure Bulk Semiconductors", Physica B, 314, pp.198-202 (2002).
    • (INVITED) Nobuyuki Sano, Akira Hiroki, and Kazuya Matsuzawa, "Device Modeling and Simulations toward Sub-10 nm Semiconductor Devices", IEEE Trans. Nanotechnology, 1, pp.63-71 (2002).
    • Nobuyuki Sano, Kazuya Matsuzawa, Akira Hiroki and Noriaki Nakayama, "Probability Distribution of Threshold Voltage Fluctuation in Metal-Oxide-Semiconductor-Field-Effect-Transistors", Jpn. J. Appl. Phys., 41, pp.L552-L554 (2002).
    • 佐野伸行、"デバイスシミュレーションとその物理"、応用物理学会誌7月号、pp.906-910 (応用物理学会、2002).
    • 佐野伸行、"モデリングの立場からみた微細化限界:物理的観点からの私見"、BREAKTHROUGH No.185 pp. 4-7、2002 (サイペック社).
  • ◆ 2001

    • K. Natori, "Scaling limit of the MOS transistor -A Ballistic MOSFET-", IEICE Trans. Electron. E84-c, 1029 (2001).
    • K. Natori, "新しいメモリー・デバイス"、応用物理学. 70, 192 (2001).
    • Nobuyuki Sano and Masaaki Tomizawa, "A Random Dopant Model for Three-Dimensional Drift-Diffusion Simulations in Metal-Oxide-Semiconductor-Field-Effect-Transistors", Appl. Phys. Lett., 79, pp.2267-2269 (2001).
    • Tomo Shimizu, Kenji Natori, and Nobuyuki Sano, "Transport Characteristics of the Cross Junction of Atomic Chains", Jpn. J. Appl. Phys., 40, pp.4489-4495 (2001).
  • ◆ 2000

    • (INVITED) Nobuyuki Sano, "Increasing Importance of Electronic Thermal Noise in Sub-0.1 um Si-MOSFETs", IEICE Trans. Electron., E83-C, pp.1203-1211 (2000).
    • Kenji Natori, Tsuyoshi Uehara, and Nobuyuki Sano, "A Monte Carlo Study of Current-Voltage Characteristics of the Scaled-Down Single-Electron Transistor with a Silicon Rectangular Parallelepiped Quantum Dot", Jpn. J. Appl. Phys., 5A, pp.2550-2555 (2000).
    • Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai, and Noriaki Nakayama, "Influence of Thermal Noise on Drain Current in Very Small Si-MOSFETs", Jpn. J. Appl. Phys., 4B, pp.1974-1978 (2000).
  • ◆ 1999

    • Andrea Bertoni, Paolo Bordone, Rossella Brunetti, Carlo Jacoboni, and Nobuyuki Sano, "Quantum versus Classical Scattering in Semiconductor Charge Transport: A Quantitative Comparison", Physica B, 272, pp.299-301 (1999).
    • Kenji Natori and Nobuyuki Sano, "A Compact Model for the Current-Voltage Characteristics of a Single Electron Transsistor in the Resonant Transport Mode", IEICE Trans. Electron., E82-C, pp.1599-1606 (1999).
    • Nobuyuki Sano, Kenji Natori, Mikio Mukai, and Kazuya Matsuzawa, " Current Fluctuation Characteristic of Sub-0.1 Micron Device Structures: A Monte Carlo Study", Jpn. J. Appl. Phys., 38, pp.L531-L533 (1999).
  • ◆ 1998

    • A. Natori, Y.takase and K. Natori, "Magneto conductance of a mesoscopic rectangular loop", Solid-State Electronics. 42, 1109 (1998).
    • Tetsuya Suemitsu, Takatomo Enoki, Nobuyuki Sano, Masaaki Tomizawa, and Yasunobu Ishii, " An Analysis of the Kink Phenomena in InAlAs/InGaAs HEMT's Using Two-Dimensional Device Simulation", IEEE Trans. Electron Dev., ED-45, pp.2390-2399 (1998).
    • Kenji Natori and Nobuyuki Sano, "Current Bistability in Resonant Tunneling through a Semiconductor Quantum Dot", Superlattices and Microstructures 23, pp.1339-1342 (1998).
    • Nobuyuki Sano and Akira Yoshii, "Quantum Kinetic Transport under High Electric Fields", VLSI Design, 6, pp. 3-7 (1998).
    • Kenji Natori, Daijiro Ohtani, and Nobuyuki Sano, "Thickness Dependence of the Effective Dielectric Constant in a Thin Film Capacitor", Appl. Phys. Lett., 73, pp.632-634 (1998).
    • Kenji Natori and Nobuyuki Sano, "Scaling Limit of Digital Circuits due to Thermal Noise", J. Appl. Phys., 83, pp.5019-5024 (1998).
  • ◆ 1997

    • Massimo V. Fischetti, Nobuyuki Sano, Steven E. Laux, and Kenji Natori, "Full-Band-Structure Theory of High-Field Transport and Impact Ionization of Electrons and Holes in Ge, Si, and GaAs", IEEE Trans. Semicond. Tech. Modeling and Sim., [http://tcad.stanford.edu/tcad-journal/archive/fischetti-feb97/] (1997).
    • Nobuyuki Sano and Kenji Natori, "Asymmetric Intersubband Phonon Scattering Associated with Intra-Collisional Field Effect in One-Dimensional Quantum Wires", J. Phys.: Condens. Matter, 9, pp.193-199 (1997).
  • ◆ 1996

    • T. Ohba and K. Natori, "Capacitance of nanostructures", Jpn. J. Appl. Phys. 35, 1366 (1996)
    • Nobuyuki Sano and Kenji Natori, "Drift-Velocity Degradation Caused by an Electric Field during Collision in One-Dimensional Quantum Wires", Phys. Rev. B, 54, pp.R8325-R8328 (1996).
  • ◆ 1995

    • Kenji. Natori, "Capacitance of microstructures", J. Appl. Phys. 78, 4543 (1995).
    • Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Temperature Dependence of Hot Carrier Effects in Short-Channel Si-MOSFET's", IEEE Trans. Electron Dev., ED-42, pp.2211-2216 (1995).
    • Nobuyuki Sano and Akira Yoshii, "Impact-Ionization Model Consistent with the Band Structure of Semiconductors", J. Appl. Phys., 77, pp.2020-2025 (1995).
  • ◆ 1994

    • Kenji Natori, "Ballistic metal-oxide-semiconductor field effect transitor", J. Appl. Phys. 76, 4879 (1994).
    • Kenji Natori, "Current-voltage characteristics of silicon on insulator metal oxide semiconductor field effect transistors in ballistic mode", Jpn. J. Appl. Phys. 33, 554 (1994).
    • A. Abramo, L. Baudry, R. Brunetti, R. Castagne, M. Charef, F. Dessenne, P. Dollfus, R. Dutton, W. L. Engl, R. Fauquembergue, C. Fiegna, M. V. Fischetti, S. Galdin, N. Goldsman, M. Hackel, C. Hamaguchi, K. Hess, K. Hennacy, P. Hesto, J. M. Higman, T. Iizuka, C. Jungemann, Y. Kamakura, H. Kosina, T. Kunikiyo, S. E. Laux, H. Lin, C. Maziar, H. Mizuno, H. J. Peifer, S. Ramaswamy, N. Sano, P. G. Scrobohaci, S. Selberherr, M. Takenaka, T-w. Tang, K. Taniguchi, J. L. Thobel, R. Thoma, K. Tomizawa, M. Tomizawa, T. Vogelsang, S-L. Wang, X. Wang, C-S. Yao, P. D. Yoder, and A. Yoshii, "A Comparison of Numerical Solutions of the Boltzmann Transport Equation for High-Energy Electron Transport Silicon", IEEE Trans. Electron Dev., ED-41, pp.1646-1654 (1994).
    • Nobuyuki Sano and Akira Yoshii, "Impact Ionization Rate near Thresholds in Si", J. Appl. Phys., 75, pp.5102-5105 (1994).
  • ◆ 1993

    • Toshihiro Itoh, Nobuyuki Sano, and Akira Yoshii, "Quasi-zero-dimensional States in Ballistic Quantum Wires", Phys. Rev. B, 47, pp.16601-16604 (1993).
    • Nobuyuki Sano and Tomofumi Furuta, "Energy Broadening in Ultrafast Relaxation Processes of Photoexcited Electrons: A Monte Carlo Approach", Phys. Rev. B, 48, pp.1426-1432 (1993).
  • ◆ 1992

    • Toshihiro Itoh, Nobuyuki Sano, and Akira Yoshii, "Effects of Width Increase in the Ballistic Quantum Wire", Phys. Rev. B 45, pp.14131-14135 (1992).
    • Jeff Bude, Nobuyuki Sano, and Akira Yoshii, "Hot Carrier Luminescence in Si", Phys. Rev. B, 45, pp.5848-5856 (1992).
    • Nobuyuki Sano and Akira Yoshii, "Impact Ionization Theory Consistent with a Realistic Band Structure of Silicon", Phys. Rev. B, 45, pp.4171-4180 (1992).
  • ◆ 1991

    • Nobuyuki Sano and Akira Yoshii, "Direct Comparison of Quantum and Classical Descriptions of High-Field Carrier Transport in Semiconductors", J. Appl. Phys., 70, pp.3127-3130 (1991).
    • Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Monte Carlo Analysis of Hot Electron Transport and Impact Ionization in Silicon", Jpn. J. Appl. Phys. 30, pp.3662-3665 (1991).
  • ◆ 1990

    • Nobuyuki Sano, Masaaki Tomizawa, and Akira Yoshii, "Monte Carlo Analysis of Ionization Threshold in Si", Appl. Phys. Lett., 56, pp.653-655 (1990).
    • Nobuyuki Sano, Takahiro Aoki, Masaaki Tomizawa, and Akira Yoshii, "Electron Transport and Impact Ionization in Si", Phys. Rev. B, 41, pp.12122-12128 (1990).
  • ◆ 1990

    • Nobuyuki Sano, Takahiro Aoki, and Akira Yoshii, "Soft and Hard Ionization Thresholds in Si and GaAs", Appl. Phys. Lett., 55, pp.1418-1420 (1989).
    • Nobuyuki Sano, "A Monte Carlo Study of Hot-Electron Transport under a Needle-Plate Assembly", J. Phys. D, 22, pp.309-315 (1989).
  • ◆ 1988

    • Nobuyuki Sano, "Hot-Electron Transport in a Needle-Plate Geometry", J. Phys. D, 21, pp.1025-1027 (1988).
    • Nobuyuki Sano and J. Fukai, "Electron Transport in SiO2 under a Strongly Inhomogeneous Electric Field", J. Appl. Phys., 64, pp.2785-2787 (1988).