Publications

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1996-1991

- T. Deng, Z. Xu, M. Emha, R. Takabe, K. Toko, and T. Suemasu,

" Hole transport properties of boron-doped p-BaSi_{2}thin films on Si(111) and Si(001) substrates, "

in preparation. - A. Anzai, F. Takata, T. Gushi, K. Toko, and T. Suemasu,

" Epitaxial growth and magnetic properties of Mn_{x}Fe_{4竏遅}N thin films grown on MgO(001) substrates by molecular beam epitaxy, "

in preparation. - F. Takata, K. Ito, Y. Takeda, Y. Saitoh, K. Takanashi, A. Kimura, and T. Suemasu,

" Preferred site occupation of 3d atoms in NixFe_{4-x}N (x=1 and 3) films revealed by x-ray absorption spectroscopy and magnetic circular dichroism , "

submitted. - F. Takata, T. Gushi, A. Anzai, K. Toko, and T. Suemasu,

" Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy, "

submitted. - S. Yachi, R. Takabe, T. Deng, K. Toko, and T. Suemasu,

" Influence of BaSi_{2}template growth duration on the generation of defects and performance of p-BaSi_{2}/n-Si heterojunction solar cells , "

submitted. - K. Kodama, R. Takabe, S. Yachi, K. Toko, and T. Suemasu,

" Decrease in electrical contact resistance of Sb-doped n^{+}-BaSi_{2}layers and spectral response of an Sb-doped n^{+}-BaSi_{2}/undoped BaSi_{2}structure for solar cells, "

submitted. - R. Takabe, T. Deng, K. Kodama, Y. Yamashita, T. Sato, K. Toko, and T. Suemasu,

" Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi_{2}epitaxial film, "

submitted. - H. Murata, N. Saitoh, N. Yoshizawa, T. Sumasu, and K. Toko,

" High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange, "

submitted. - K. Toko, R. Yoshimine, and T. Suemasu,

" High-hole mobility polycrystalline Ge on insulator formed by controlling atomic density of precursor for solid-phase crystallization, "

submitted. - D. A. Shohonov, I. S. Samusevich, A. B. Filonov, D. B. Migas, and V. E. Borisenko, T. Deng, and T. Suemasu,

" Transport properties of mono- and polycrystalline BaSi_{2}, "

submitted. - K. Ito, Y. Yasutomi, S. Zhu, M. Nurmamat, Y. Takeda, Y. Saitoh, K. Toko, R. Akiyama, A. Kimura, and T. Suemasu,

" Control of saturation magnetization and perpendicular magnetic anisotropy in epitaxial Co_{x}Mn_{4-x}N thin films, "

submitted. - T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu,

" Boron-doped p-BaSi_{2}/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets, "

Journal of Crystal Growth 475 (2017) 186. - Z. Xu, T. Deng, R. Takabe, K. Toko, and T. Suemasu,

" Fabrication and characterizations of nitrogen-doped BaSi_{2}epitaxial films grown by molecular beam epitaxy, "

Journal of Crystal Growth 471 (2017) 37. - S. Higashikozono, K. Ito, F. Takata, T. Gushi, K. Toko, and T. Suemasu,

" Highly oriented epitaxial (α^{''}+ α^{'})-Fe_{16}N_{2}films on α-Fe(001) buffered MgAl_{2}O_{4}(001) substrate and their magnetizations, "

Journal of Crystal Growth 468 (2017) 691. - M. Ajmal Khan and T. Suemasu,

" Donor and acceptor levels in impurity-doped semiconducting BaSi_{2}thin films for solar cells application, "

Physica Status Solidi A 1700019 (2017). - Joko Suwardy, Junyi Chen, Shiyagu Subramani, Wipakorn Jevasuwan, Kaoru Toko, Takashi Suemasu, and Naoki Fukata,

" Control of grain size and crystallinity of poly-Si film on quartz by Al-induced crystallization, "

CrystEngComm 19, 2305 (2017). - H. Murata, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon, "

Applied Physics Letters 110, 033108 (2017). - K. Ito, N. Rougemaille, S. Pizzini, S. Honda, N. Ota, T. Suemasu, and O. Fruchart,

" Magnetic domain walls in nanostrips of single-crystalline Fe_{4}N thin films with fourfold in-plane magnetic anisotropy, "

Journal of Applied Physics 121, 243904 (2017) - K. Toko, K. Kusano, M. Nakata, and T. Suemasu,

" Low temperature synthesis of highly oriented p-type Si_{1-x}Ge_{x}(x: 0-1) on an insulator by Al-induced layer exchange, "

Journal of Applied Physics 122,155305 (2017) - Fumiya Takata, Kazuki Kabara, Keita Ito, Masakiyo Tsunoda, and Takashi Suemasu,

" Negative anisotropic magnetoresistance resulting from minority spin transport in Ni_{x}Fe_{4-x}N (x = 1 and 3) epitaxial films, "

Journal of Applied Physics 121, 023903 (2017). - M. Nakata, Toko, and T. Suemasu,

" Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate , "

Thin Solid Films 626, 190 (2017). - W. Du, R. Takabe, S. Yachi, K. Toko, and T. Suemasu,

" Enhanced spectral response of semiconducting BaSi_{2}films by oxygen incorporation, "

Thin Solid Films 629, 17 (2017). - Y. Yamashita, S. Yachi, R. Takabe, M Emha bayu, K. Toko, and T. Suemasu,

" Reduction in interface defect density in p-BaSi_{2}/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate, "

to be published in Jpn. J. Appl. Phys. - Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, and Takashi Suemasu,

" Polarized Raman spectra of BaSi_{2}epitaxial film grown by molecular beam epitaxy , "

Japanese Journal of Applied Physics 56, 05DD02 (2017). - Takamichi Suhara, Koichi Murata, Aryan Navabi, Kosuke O. Hara, Yoshihiko Nakagawa, Cham Thi Trinh, Yasuyoshi Kurokawa, Takashi Suemasu, Kang L. Wang, and Noritaka Usami,

" Post-annealing Effects on Undoped BaSi_{2}Evaporated Films Grown on Si Substrates, "

Japanese Journal of Applied Physics 56, 05DB05 (2017). - Cham Thi Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami,

" Growth of BaSi_{2}film on Ge (100) by vacuum evaporation and its photoresponse properties, "

Japanese Journal of Applied Physics 56,05DB06 (2017). - S. Yachi, R. Takabe, K. Toko, and T. Suemasu,

" Effect of p-BaSi_{2}layer thickness on the solar cell performance of p-BaSi_{2}/n-Si heterojunction solar cells , "

Japanese Journal of Applied Physics 56, 05DB03 (2017). - M. Emha Bayu, Cham Thi Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu,

" Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi_{2}, a potential light absorption layer for solar cell, "

Japanese Journal of Applied Physics 56, 05DB01 (2017). - R. Takabe, S. Yachi, D. Tsukahara, K. Toko, and T. Suemasu,

" Growth of BaSi_{2}continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi_{2}/n-Ge heterojunction solar cells, "

Japanese Journal of Applied Physics 56, 05DB02 (2017). - H. Murata, K. Toko, and T. Suemasu,

" Multilayer graphene on insulator formed by Co-induced layer exchange, "

Japanese Journal of Applied Physics 56, 05DE03 (2017). - R. Yoshimine, K. Toko, and T. Suemasu,

" Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator, "

Japanese Journal of Applied Physics 56, 05DE04 (2017). -
**(Review Paper)**T. Suemasu and N. Usami,

" Exploring the Potential of Semiconducting BaSi_{2}for Thin-Film Solar Cell Applications, "

Journal of Physics D: Applied Physics 50, 023001 (2017).

- Keita Ito, Soma Higashikozono, Fumiya Takata, Toshiki Gushi, Kaoru Toko, and Takashi Suemasu,

" Growth and magnetic properties of epitaxial Fe_{4}N films on insulators possessing lattice spacing near Si(001) plane, "

Journal of Crystal Growth 455 (2016) 66. - S. Honda, D. Yamamoto, T. Ohsawa, T. Gushi, K. Ito, and T. Suemasu,

" Controlling magnetic domain wall positions with an external magnetic field and a low spin-polarized current in chamfered L-shaped ferromagnetic thin ribbons, "

Journal of Physics D: Applied Physics 49 (2016) 385002. - 末益 崇,

" BaSi系薄膜太陽電池に向けた取り組みと今後の展望,材料の科学と工学(解説) 第53巻3号,10-13 2016. "

- Cham Thi Trinh, Y. Nakagawa, K. O. Hara, R. Takabe, T. Suemasu, and N. Usami,

" Photoresponse properties of BaSi_{2}film grown on Si (100) by vacuum evaporation, "

Materials Research Express 3, 076204 (2016). - M. Nakata, K. Toko, N. Saitoh, N.Yoshizawa, and T. Suemasu,

" Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization , "

Scripta Materialia 122 (2016) 86-88. - T. Gushi, K. Ito, S. Higashikozono, F. Takata, H. Oosato, Y. Sugimoto, K. Toko, S. Honda, and T. Suemasu,

" Electrical detection of domain wall in Fe_{4}N nanostrip by negative anisotropic magnetoresistance effect, "

Journal of Applied Physics 120, 113903 (2016). - F. Takata, K. Ito, T. Gushi, S. Higashikozono, K. Toko, and T. Suemasu,

" Epitaxial growth and magnetic properties of Ni_{x}Fe_{4-x}N (x = 0, 1, 3, and 4) films on SrTiO3(001) substrates, "

Journal of Applied Physics 120, 083907 (2016). - M. Baba, M. Kohyama, and T. Suemasu,

" First-principles study of twin grain boundaries in epitaxial BaSi_{2}on Si(111), "

Journal of Applied Physics 120, 085311 (2016). - K. O. Hara, Cham Thi Trinh, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Kurokawa, T. Suemasu, and N. Usami,

" Effects of deposition rate on the structure and electron density of evaporated BaSi_{2}films, "

Journal of Applied Physics 120, 045103 (2016). - R. Takabe, H. Takeuchi, W. Du, K. Ito, K. Toko, S. Ueda, A. Kimura, and T. Suemasu,

" Evaluation of band offset at amorphous-Si/BaSi_{2}interfaces by hard x-ray photoelectron spectroscopy, "

Journal of Applied Physics 119, 165304 (2016). - R. Takabe, W. Du, K. Ito, H. Takeuchi, K. Toko, S. Ueda, A. Kimura, and T. Suemasu,

" Measurement of valence-band offset at native oxide/BaSi_{2}interfaces by hard x-ray photoelectron spectroscopy, "

Journal of Applied Physics 119, 025306 (2016). - S. Yachi, R. Takabe, K. Toko, and T. Suemasu,

" Effect of amorphous Si capping layer on the carrier transport properties of BaSi_{2}and resultant conversion efficiency approaching 10% in p-BaSi_{2}/n-Si solar cells, "

Applied Physics Letters 109, 072103 (2016). - D. Tsukahara, S. Yachi, H. Takeuchi, R. Takabe, W. Du, M. Baba, Y. Li, K. Toko, N. Usami, and T. Suemasu,

" p-BaSi_{2}/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%, "

Applied Physics Letters 108, 152101 (2016). - R. Takabe, S. Yachi, W. Du, D. Tsukahara, H. Takeuchi, K. Toko, and T. Suemasu,

" Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi_{2}/n-Si heterojunction solar cells, "

AIP Advances 6, 085107 (2016). - K. Ito, Y. Yasutomi, K. Kabara, T. Gushi, S. Higashikozono, K. Toko, M. Tsunoda, and T. Suemasu,

" Perpendicular magnetic anisotropy in CoxMn_{4-x}N (x = 0 and 0.2) epitaxial films and possibility of tetragonal Mn_{4}N phase, "

AIP Advances 6, 056201 (2016). - Yoji Imai, Mitsugu Sohma, and T. Suemasu,

" Effect of Oxygen Incorporation in the Mg_{2}Si Lattice on its Conductivity Type ―A possible reason of the p-type Conductivity of Postannealed Mg_{2}Si Thin Film ―, "

Journal of Alloys and Compounds 676 (2016) 91. - Y. Nakagawa, K. O. Hara, T. Suemasu, and N. Usami,

" On the mechanism of BaSi_{2}thin film formation on Si substrate by vacuum evaporation , "

Procedia Engineering 141, 23 (2016). - K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami,

" Simple vacuum evaporation route to BaSi_{2}thin films for solar cell applications, "

Procedia Engineering 141, 27 (2016). - K. Toko, N. Oya, M. Nakata, and T. Suemasu,

" Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator, "

Thin Solid Films 616, 316 (2016). - K. O. Hara, W. Du, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Toko, T. Suemasu, and N. Usami,

" Control of electrical properties of BaSi_{2}thin films by alkali-metal doping using alkali-metal fluorides, "

Thin Solid Films 603, 218 (2016).

- Kosuke O. Hara, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Takashi Suemasu, and Noritaka Usami,

" Structral and electrical characterization of crack-free BaSi_{2}thin films fabricated by thermal evaporation, "

Thin Solid Films 595 (2015) 68. - M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrate, "

Applied Physics Letters 107, 133102 (2015). - K. Toko, M. Nakata, W. Jevasuwan, N. Fukata, and T. Suemasu,

" Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor・広iquid・拘olid Growth, "

ACS Applied Materials ・・Interfaces 7, 18120 (2015). - W. Du, R. Takabe, M. Baba, H. Takeuchi, K. O. Hara, K. Toko, N. Usami, and T. Suemasu,

" Formation of BaSi_{2}heterojunction solar cells using transparent MoO_{x}hole transport layers, "

Applied Physics Letters 106, 122104 (2015). - K. Toko, N. Oya, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" 70^{o}C synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge, "

Applied Physics Letters 106, 082109 (2015). - K. Ito, T. Sanai, Y. Yasutomi, T. Gushi, K. Toko, H. Yanagihara, M. Tsunoda, E. Kita, and T. Suemasu,

" Mossbauer study on epitaxial Co_{x}Fe_{4-x}N films grown by molecular beam epitaxy, "

Journal of Applied Physics 117, 17B717 (2015). - K.Ito, K. Toko, Y. Takeda, Y. Saitoh, T. Oguchi, T. Suemasu, and A. Kimura,

" Local electronic states of Fe_{4}N films revealed by x-ray absorption spectroscopy and x-ray magnetic circular dichroism, "

Journal of Applied Physics 117, 183906 (2015). (Selected as a paper illustrating the rich and timely presence of Materials Science in JAP.) - K. Toko, M. Nakata, A. Okada, M. Sasase, N. Usami, and T Suemasu,

" Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization, "

International Journal of Photoenergy 2015, 790242 (2015). - K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Improved surface quality of the metal-induced crystallized Ge seed layer and its influence on subsequent epitaxy, "

Crystal Growth & Design 15, 1535 (2015). - T. Suemasu,

" Possibility of Si-based new material for thin-film solar cell applications, "

Journal of Physics: Conference Series 596, 012005 (2015). - T. Suemasu,

" Exploration of the possibility of semiconducting BaSi_{2}nanofilms for solar cell applications, "

Physics, Chemistry and Applications of Nanostructures:Proceedings of International Conference Nanomeeting - 2015. - T. Gushi, K. Ito, S. Honda, Y. Yasutomi, K. Toko, H. Oosato, Y. Sugimoto, K. Asakawa, N. Ota, and T. Suemasu,

" Fabrication of L-shaped Fe_{4}N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field, "

Japanese Journal of Applied Physics 54, 028003 (2015). - Y. Nakagawa, K. O. Hara, T. Suemasu, and N. Usami,

" Fabrication of single-phase polycrystalline BaSi_{2}thin films on silicion substrates by vacuum evaporation for solar cell applications, "

Japanese Journal of Applied Physics 54, 08KC03 (2015). - D. Tsukahara, M. Baba, K. Watanabe, T. Kimura, K. O. Hara, W. Du, N. Usami, K. Toko, T. Sekiguchi, and T. Suemasu,

" Cross-sectional potential profiles across a BaSi_{2}pn junction by Kelvin probe force microscopy, "

Japanese Journal of Applied Physics 54, 030306 (2015). - Yoji Imai, Mitsugu Sohma, and Takashi Suemasu,

" Energetic evaluation of the possibility of interstitial compound formation of BaSi_{2}with 2p-, 3s-, and 3d- elements by first-principle calculations, "

Japanese Journal of Applied Physics 54, 07JE03 (2015). - K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami,

" Realization of single-phase BaSi_{2}films by vacuum evaporation with suitalbe optical properties for solar cell applications, "

Japanese Journal of Applied Physics 54, 07JE02 (2015). - K. Nakazawa, K. Toko, and T. Suemasu,

" Effect of diffusion control layer on reverse Al-induced layer exchange process for high-quality Ge/Al/glass structure, "

Journal of Electronic Materials 44, 1377 (2015). - N. Oya, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films, "

Thin Solid Films 583, 221 (2015). - H. Takeuchi, W. Du, M. Baba, R. Takabe, K. Toko, and T. Suemasu,

" Characterization of defect levels in undoped n-BaSi_{2}epitaxial films on Si(111) by deep-level transient spectroscopy, "

Japanese Journal of Applied Physics 54, 07JE01 (2015). -
**(Review Paper)**T. Suemasu,

" Exploring the possibility of semiconducting BaSi_{2}for thin-film solar cell applications, "

Japanese Journal of Applied Physics 54, 07JA01 (2015). - R. Takabe, K. O. Hara, M. Baba, W. Du, N. Shimada, K. Toko, N. Usami, and T. Suemasu,

" Effect of grain areas on minority-carrier lifetime in undoped n-BaSi_{2}on Si(111), "

Japanese Journal of Applied Physics Conf. Proc. 3, 011401 (2015). - K. Nakazawa, K. Toko, and T. Suemasu,

" Removal of Ge Islands in Al-induced layer-exchanged Ge thin films on glass substrates by selective etching technique, "

Japanese Journal of Applied Physics Conf. Proc. 3, 011402 (2015). - D. Tsukahara, M. Baba, R. Takabe, K. Toko, and T. Suemasu,

" Investigation of surface potential distributions of phosphorus-doped n-BaSi thin-films by kelvin probe force microscopy , "

Japanese Journal of Applied Physics Conf. Proc. 3, 011403 (2015). - 末益 崇,

"半導体シリサイドの太陽電池応用に向けて,"

応用物理第84巻, 第3号 (最近の展望) (2015)235-239.

- 末益 崇,

" シリサイド系半導体の科学と技術 − 資源・環境時代の新しい半導体と関連物質, "

前田佳均編著, 裳華房, 2014年9月21日, ISBN 9784785329204.

- Kosuke O. Hara, Noritaka Usami, Masakazu Baba, Kaoru Toko, and Takashi Suemasu,

" N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism, "

Thin Solid Films 567 (2014) 105. - T. Suemasu,

" Toward Si-based high-efficiency thin-film solar cells using semiconducting BaSi_{2}, "

Materials Science and Engineering 54, 012009 (2014). - N. Oya, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization, "

Applied Physics Letters 104, 262107 (2014). - M. Ajmal Khan, K. Nakamura, W. Du, K. Toko, N. Usami, and T. Suemasu,

" Precipitation control and activation enhancement in boron-doped p^{+}-BaSi_{2}fiilms grown by molecular beam epitaxy, "

Applied Physics Letters 104, 252104 (2014). - K. Toko, R. Numata, N. Oya, N. Fukata, N. Usami, and T. Suemasu,

" Low-temperature (180^{o}C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization, "

Applied Physics Letters 104, 022106 (2014). (Selected as a highly cited, rising star paper published in Applied Physics Letters in 2014 and 2015.) - M. Baba, K. O. Hara, D. Tsukahara, K. Toko, N. Usami, T. Sekiguchi, and T. Suemasu,

" Potential variation around grain boundaries in BaSi_{2}films grown on multicrystalline silicon evaluated by Kelvin probe force microscopy, "

Journal of Applied Physics 116, 235301 (2014). - D. Tsukahara,M. Baba, S. Honda, Y. Imai, K. O. Hara, N. Usami, K. Toko, J. H. Werner, and T. Sueamsu,

" Potential variations around grain boundaries in impurity-doped BaSi_{2}epitaxial films evaluated by Kelvin probe force microscopy, "

Journal of Applied Physics 116, 123709 (2014). - Keita Ito, Kazuki Kabara, Tatsunori Sanai, Kaoru Toko, Yoji Imai, Masakiyo Tsunoda, and Takashi Suemasu,

" Sign of the spin-polarization in cobalt-iron nitrides films determined by the anisotropic magnetoresistance effect, "

Journal of Applied Physics 116, 053912 (2014). - W. Du, M. Baba, K. Toko, K. O. Hara, K. Watanabe, T. Sekiguchi, N. Usami, and T. Suemasu,

" Analysis of the electrical properties of Cr/n-BaSi_{2}Schottky junction and n-BaSi_{2}/p-Si heterojunction diodes for solar cell applications, "

Journal of Applied Physics 115, 223701 (2014). - R. Takabe, K. O. Hara, M. Baba, W. Du, N. Shimada, K. Toko, N. Usami, and T. Suemasu,

" Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi_{2}on Si(111), "

Journal of Applied Physics 115, 193510 (2014). - K. Toko, R. Numata, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,

" Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange, "

Journal of Applied Physics 115, 094301 (2014). - K. Ito, T. Sanai, Y. Yasutomi, S. Zhu, K. Toko, Y. Takeda, Y. Saitoh, A. Kimura, and T. Suemasu,

" X-ray magnetic circular dichroism for CoxFe_{4-x}N (x = 0, 3, 4) films grown by molecular beam epitaxy, "

Journal of Applied Physics 115, 17C712 (2014). - Y. Yasutomi, K. Ito, T. Sanai, K. Toko, and T. Suemasu,

" Perpendicular magnetic anisotropy of Mn_{4}N films on MgO(001) and SrTiO_{3}(001) substrates, "

Journal of Applied Physics 115, 17A935 (2014). - Y. Imai, M. Sohma, and T. Suemasu,

" Energetic Stability and Magnetic moment of Tri- , Tetra-, and Octa- Ferromagnetic Element nitrides Predicted by First-Principle Calculations, "

Journal of Alloys and Compounds 611 (2014) 440. - K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, and T. Suemasu,

" Self-orgnaization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization, "

CrystEngComm 16, 9590 (2014). - K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,

" Orientation control of Ge thin films by underlayer-selected Al-induced crystallization, "

CrystEngComm 16, 2578 (2014). - Kosuke O. Hara, Yusuke Hoshi, Noritaka Usami, Yasuhiro Shiraki,
Kotaro Nakamura, Kaoru Toko, and Takashi Suemasu ,

" N-Type Doping of BaSi_{2}Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing , "

Thin Solid Films 557, 90 (2014). - M. Baba, K. Watanabe, K. O. Hara, K. Toko, T. Sekiguchi, N. Usami, and Takashi Suemasu,

" Evaluation of minority carrier diffusion length of undoped n-BaSi_{2}epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique, "

Japanese Journal of Applied Physics 53, 078004 (2014). - S. Koike, M. Baba, R. Takabe, N. Zhang, W. Du, K. Toko, and T. Suemasu,

" Photoresponse properties of undoped BaSi_{2}epitaxial layers on n^{+}-BaSi_{2}/p^{+}-Si (001) by molecular beam epitaxy , "

Japanese Journal of Applied Physics 53, 058007 (2014). - K. Nakazawa, K. Toko, N. Usami, and T. Suemasu,

" Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates, "

Japanese Journal of Applied Physics 53, 04EH01 (2014). - R. Numata, K. Toko, N. Oya, N. Usami, and T. Suemasu,

" Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange, "

Japanese Journal of Applied Physics 53, 04EH03 (2014). - R. Takabe, K. Nakamura, M. Baba, W. Du, M. A. Khan, K. Toko, M. Sasase, K. O. Hara, N. Usami, and T. Suemasu,

" Fabrication and characterization of BaSi_{2}epitaxial films over 1 μm in thickness on Si(111), "

Japanese Journal of Applied Physics 53, 04ER04 (2014). - N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu

" Diffusion coefficients of impurity atoms in BaSi_{2}epitaxial films grown by molecular beam epitaxy , "

Japanese Journal of Applied Physics 53, 04ER02 (2014). - R. Numata, K. Toko, N. Usami, and T. Suemasu,

" Large-grained (111)-oriented Si/Al/SiO_{2}structures formed by diffusion-controlled Al-induced layer exchange, "

Thin Solid Films 557, 147 (2014). - R. Numata, K. Toko, K. Nakazawa, N. Usami, and T. Suemasu,

" Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer, "

Thin Solid Films 557, 143 (2014).

- M. Baba, S. Tsurekawa, K. Watanabe, W. Du, K. Toko, K. O. Hara, N. Usami, T. Sekiguchi, and T. Suemasu,

" Evaluation of potential variations around grain boundaries in BaSi_{2}epitaxial films by Kelvin probe force microscopy, "

Applied Physics Letters 103, 142113 (2013). - K. Ito, T. Sanai, S. Zhu, Y. Yasutomi, K. Toko, S. Honda, S. Ueda, Y. Takeda, Y. Saitoh, Y. Imai, A. Kimura, and T. Suemasu,

" Electronic structures and magnetic moments of Co_{3}FeN thin films grown by molecular beam epitaxy, "

Applied Physics Letters 103, 232403 (2013). - M. Ajmal Khan, K. O. Hara, W. Du, M. Baba, K. Nakamura, M. Suzuno, K. Toko, N. Usami, and T. Suemasu

" In-situ heavily p-type doping of over 10^{20}cm^{-3}in semiconducting BaSi_{2}thin films for solar cells applications, "

Applied Physics Letters 102 (2013) 112107. - Masakazu Baba, Keita Ito, Weijie Du, Tatsunori Sanai, Kazuaki Okamoto, Kaoru Toko, Shigenori Ueda, Yoji Imai, Akio Kimura, and Takashi Suemasu,

" Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi_{2}, "

Journal of Applied Physics 114, 123702 (2013). - K. Nakamura, M. Baba, K. M. Ajmal, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko, and T. Suemasu

" Lattice and grain-boundary diffusions of boron atoms in BaSi_{2}epitaxial films on Si(111), "

Journal of Applied Physics 113, 053511 (2013). - K. O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Suemasu,

" Determination of bulk minority-carrier lifetime in BaSi_{2}earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing, "

Applied Physics Express 6 (2013) 112302 (4 pages). - S. Koike, M. Baba, R. Takabe, N. Zhang, W. Du, K. Toko, and T. Suemasu,

" Photoresponse properties of undoped BaSi_{2}epitaxial layers on n^{+}-BaSi_{2}/p^{+}-Si (001) by molecular beam epitaxy , "

Japanese Journal of Applied Physics 53, 058007 (2014). - K. Nakazawa, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,

" Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates, "

Physica Status Solidi (c) 10, 1781 (2013). - R. Takabe, M. Baba, K. Nakamura, W. Du, M. A. Khan, S. Koike, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,

" Fabarication and characterizations of phosphorus-doped n-type BaSi_{2}epitaxial films grown by molecular beam epitaxy, "

Physica Status Solid (c) 10,1753 (2013). - N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,

" Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi_{2}epitaxial layers, "

Physica Status Solid (c) 10, 1762 (2013). - Nurul Amal Abdul Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko, and T. Suemasu,

" Fabrication and characterization of polycrystalline BaSi_{2}by RF sputtering, "

Physica Status Solid (c) 10, 1759 (2013). - R. Numata, K. Toko, N. Usami, and T. Suemasu,

" Fabrication of BaSi_{2}films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure, "

Physica Status Solidi (c) 10, 1769 (2013). - W. Du, M. Baba, R. Takabe, N. Zhang, K. Toko, N. Usami, and T. Suemasu,

" Investigation of the tunneling properties and surface morphologies of BaSi_{2}/Si tunnel junctions for BaSi_{2}solar cell applications, "

Physica Status Solid (c) 10, 1765 (2013). - M. Baba, K. O. Hara, K. Toko, N. Saito, N. Yoshizawa, N. Usami, and T. Suemasu,

" Epitaxial growth of BaSi_{2}films with large grains using vicinal Si(111) substrates, "

Physica Status Solidi (c) 10, 1756 (2013). - K. Nakazawa, K. Toko, N. Saitoh, N.Yoshizawa, N. Usami, and T. Suemasu,

" Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization, "

ECS journal of solid state science and technology 2 (2013) Q195. - K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,

" Double-layered Ge thin films on insulators formed by an Al-induced layer-exchange process, "

Crystal Growth ・・Design 13 (2013) 3908. - Yoji Imai, M. Sohma, and Takashi Suemasu,

" Possibility of spin-polarized electric current through Mn-, Fe-, Co-, or Ni-doped BaSi2 predicted by their calculated densities of states, "

Journal of Magnetism and Magnetic Materials 344 (2013) 25. - K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, and T. Suemasu

" Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO_{2}substrates, "

Journal of Crystal Growth 372 (2013) 189. - R. Numata, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu

" Orientation control of large-grained Si films on insulators by thickness-modulated Al-induced crystallization, "

Crystal Growth & Design 13 (2013) 1767. - Kosuke O. Hara, Yusuke Hoshi, Noritaka Usami, Yasuhiro Shiraki, Kotaro Nakamura, Kaoru Toko, and Takashi Suemasu

" Structural study on phosphorus doping of BaSi_{2}epitaxial films by ion implantation, "quot;

Thin Solid Films 534 (2013) 470. - Kosuke O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Sueamasu

" Mechanism of strain relaxation in BaSi_{2}epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation, "

Physica Status Solidi (c) 10, 1677 (2013). - T. Yoneyama, A. Okada, M. Suzuno, T. Shibutam, K. Matsumaru, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu

" Formation of polycrystalline BaSi_{2}films by radio-frequency magnetron sputtering for thin-film solar cell applications, "

Thin Solid Films 534 (2013) 116. - K. Nakamura, K. Toh, M. Baba, K. M. Ajmal, W. Du, K. Toko, and T. Suemasu

" Lattice and grain-boundary diffusions of impurity atoms in BaSi_{2}epitaxial layers grown by molecular beam epitaxy, "

Journal of Crystal Growth 378 (2013) 189. - T. Sanai, K. Ito, K. Toko, and T. Suemasu

" Epitaxial growth of ferromagnetic Co_{x}Fe_{4-x}N thin films on SrTiO_{3}(001) and magnetic properties, "

Journal of Crystal Growth 378 (2013) 342. - S. Koike, K. Toh, M. Baba, K. Toko, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu

" Large photoresponsivity in semiconducting BaSi_{2}epitaxial films grown on Si(001) substrates by molecular beam epitaxy, "

Journal of Crystal Growth 378 (2013) 198. - M. A. Khan, K. O. Hara, K. Nakamura, W. Du, M. Baba, K. Toh, M. Suzuno, K. Toko, N. Usami, and T. Suemasu

" Molecular beam epitaxy of boron doped p-type BaSi_{2}epitaxial films on Si(111) substrates for thin-film solar cells, "

Journal of Crystal Growth 378 (2013) 201. - M. Baba, K. Toh, K. Toko, K. O. Hara, N. Usami, N. Saito, N. Yosihzawa, and T. Suemasu

" Formation of large-grain-sized BaSi_{2}epitaxial layers grown on Si(111) by molecular beam epitaxy, "

Journal of Crystal Growth 378 (2013) 193. - Y. Funase, M. Suzuno, K. Toko, and T. Suemasu

" Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi_{2}films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy, "

Journal of Crystal Growth 378 (2013) 365.

- Kosuke O. Hara, Noritaka Usami, Katsuaki Toh, Masakazu Baba, Kaoru Toko, and Takashi Suemasu,

" Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi_{2}Films on Silicon, "

Journal of Applied Physics 112 (2012) 083108. - M. Baba, K. Nakamura, W. Du, M. Ajmal Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu,

" Molecular Beam Epitaxy of BaSi_{2}Films with Grain Size over 4 μm on Si(111), "

Japanese Journal of Applied Physics 51 (2012) 098003. - K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu,

" Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization, "

Applied Physics Letters 101 (2012) 072106. - T. Sanai, K. Ito, K. Toko, and T. Suemasu

" Molecular beam epitaxy of Co_{x}Fe_{4-x}N (0.4<x<2.9) thin films on SrTiO3(001) substrates, "

Journal of Crystal Growth 357 (2012) 53. - N.Usami, M.Jung, and T.Suemasu

" On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process, "

Journal of Crystal Growth 362 (2012) 16. - K. Toh, K. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu,

" Epitaxy of Orthorhombic BaSi_{2}with Preferential in-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature, "

Japanese Journal of Applied Physics 51 (2012) 095501. - K. Ito, H. Takahashi, K. Kabara, T. Sanai, K. Toko, T. Suemasu, and, M. Tsunoda,

" Negative Anisotropic Magnetoresistance in ﾎｳ'-Fe_{4}N Epitaxial Films on SrTiO_{3}(001) Grown by Molecular Beam Epitaxy, "

Japanese Journal of Applied Physics 51 (2012) 068001. - K. Ito, K. Okamoto, K. Harada, T. Sanai, K. Toko, S. Ueda, Y. Imai, T. Okuda, K. Miyamoto, A. Kimura, and T. Suemasu

" Negative spin polarization at the Fermi level in Fe_{4}N epitaxial films by spin-resolved photoelectron spectroscopy, "

Journal of Applied Physics 112 (2012) 013911. - 末益 崇

" 新材料BaSi_{2}を用いたレアアースレス薄膜結晶太陽電池を目指して, "

「特集:光デバイスの未踏領域」光アライアンス Vol. 23, No. 6,11-14 (2012). - M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K.O. Hara, N. Usami, and T. Suemasu,

" Investigation of grain boundaries in BaSi_{2}epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique, "

Journal of Crystal Growth 348 (2012) 75. - W. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, N. Nakamura, K. Toko, N.Usami, and T. Suemasu,

" Improved photoresponsivity of semiconducting BaSi_{2}epitaxial films grown on a tunnel junction for thin-film solar cells, "

Applied Physics Letters 100 (2012) 152114. (Selected for the April 30, 2012 issue of Virtual Journal of Nanoscale Science & Technology.) - M. Ajmal Khan, T. Saito, K. Nakamura, M. Baba, W. Du, K. Toh, K. Toko, and T. Suemasu,

" Electrical characterization and conduction mechanism of impurity-doped BaSi_{2}films grown on Si(111) by molecular beam epitaxy, "

Thin Solid Films 522 (2012) 95. - Kosuke O. Hara, Noritaka Usami, Katsuaki Toh, Taoru Toko, and Takashi Suemasu,

" Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate, "

Japanese Journal of Applied Physics 51 (2012) 10NB06. - K. Toh, K. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu,

" Molecular beam epitaxy of BaSi_{2}thin films on Si(001) substrates, "

Journal of Crystal Grwoth 345 (2012) 16. - A. Okada, K. Toko, K.O. Hara, N. Usami, and T. Suemasu,

" Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO_{2}insertion layer thickness, "

Journal of Crystal Growth 356 (2012) 65. - Weijie Du, T. Saito, Muhammad Ajmal Khan, K. Toko, N.Usami, and T. Suemasu,

" Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n^{+}-BaSi_{2}/p^{+}-Si Tunnel Junction to Undoped BaSi_{2}Overlayers, "

Japanese Journal of Applied Physics 51 (2012) 04DP01. - T. Suemasu, K. Morita, M. Kobayashi, and Y. Ichikawa,

" Local structure around Sr in semiconducting BaSrSi_{2}studied using extended x-ray absorption fine structures, "

Physics Procedia 23 (2012) 53.

- M. Jung, A. Okada, T. Saito, T. Suemasu, and N. Usami

" The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method, "

Journal of Ceramic Processing Research 12, Special 3 (2011) s187-s192. - K. Ito, K. Harada, K. Toko, M. Ye, A. Kimura, Y. Takeda, Y. Saitoh, H. Akinaga, and T. Suemasu

" X-ray magnetic circular dichroism of ferromagnetic Co_{4}N epitaxial films on SrTiO_{3}(001) substrates grown by molecular beam epitaxy, "

Applied Physics Letters 99 (2011) 252501. - Kosuke O. Hara, Noritaka Usami, Yusuke Hoshi, Yasuhiro Shiraki,
Mitsushi Suzuno, Kaoru Toko, and Takashi Suemasu

" Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films, "

Japanese Journal of Applied Physics 50 (2011) 121202. - K. Ito, K. Harada, K. Toko, H. Akinaga, and T. Suemasu

" Epitaxial growth and magnetic characterization of ferromagnetic Co_{4}N thin films on SrTiO_{3}(001) substrates by molecular beam epitaxy, "

Journal of Crystal Growth 336 (2011) 40. - K.S.Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu

" Dependence of Resonant Voltage on Quantum-Well Width in CaF_{2}/Fe_{3}Si/CaF_{2}Resonant Tunneling Diodes, "

Japanese Journal of Applied Physics 50 (2011) 108002. - M. Ajmal Khan, T. Saito, M. Takeishi, and T. Suemasu,

" Molecular Beam Epitaxy of Cu-Doped BaSi_{2}Films on Si(111) Substrate and Evaluation & Qualification of Depth Profiles of Cu Atoms for the Formation of Efficient Solar Cells, "

Advanced Materials Research (Advanced Materials for Applied Science and Technology ) 326 (2011) 139. - K.Ito, G. H. Lee, M. Suzuno, H. Akinaga, and T. Suemasu,

" Molecular beam epitaxy of ferromagnetic γ^{'}-Fe_{4}N films on LaAlO_{3}(001), SrTiO_{3}(001) and MgO(001) substrates, "

Journal of Crystal Growth 322 (2011) 63. - T. Sakurai, T. Ohashi, H. Kitazume, M. Kubota, T. Suemasu, and K. Akimoto,

" Structural control of organic solar cells based on nonplanar metallophthalocyanine/C_{60}heterojunctions using organic buffer layers, "

Organic Electronics 12 (2011) 966. - K.Ito, G. H. Lee, K. Harada, M. Suzuno, T. Suemasu, Y. Takeda, Y. Saito, M. Ye, A. Kimura, and H. Akinaga,

" Spin and orbital magnetic moments of molecular beam epitaxy γ^{'}-Fe_{4}N thin films on LaAlO_{3}(001)and MgO(001) substrates by x-ray magnetic circular dichroism, "

Applied Physics Letters 98 (2011) 102507. - K. Akutsu, H. Kawakami, M. Suzuno, T. Yaguchi, K. Jiptner, J. Chen, T. Sekiguchi, T. Ootsuka, and T. Suemasu,
,

" Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi_{2}layers grown by molecular-beam epitaxy, "

Journal of Applied Physics 109 (2011) 123502. - K. Toh, T. Saito, and T. Suemasu,

" Optical absorption properties of BaSi_{2}epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy,"

Japanese Journal of Applied Physics 50 (2011) 068001. (JJAP Most Cited Article 2012, Top10.) - M. Ajmal Khan, M. Takeishi, Y. Matsumoto, T. Saito, and T. Suemasu,

" Al- and Cu-doped BaSi_{2}films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms,"

Physics Procedia 11 (2011) 11. - A. Okada, R. Sasaki, Y. Matsumoto, M. Takeishi, T. Saito, K. Toh, N. Usami, and T. Suemasu,

" Formation of poly-Si layers on AZO/SiO_{2}substrates and anti-reflection coating with AZO films for BaSi_{2}solar cells,"

Physics Procedia 11 (2011) 31. - K. Toh, T. Saito, M. Ajmal Khan, A. Okada, N. Usami, and T. Suemasu,

" Fabrication of BaSi_{2}films on transparent CaF_{2}substrates by molecular beam epitaxy for optical characterization,"

Physics Procedia 11 (2011) 189. - M. Takeishi, Y. Matsumoto, R. Sasaki, T. Saito, and T. Suemasu,

" Growth of Al-doped p-type BaSi_{2}films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties,"

Physics Procedia 11 (2011) 27. - G. H. Lee, K. Ito, and T. Suemasu,

" Toward the epitaxial growth of ferromagnetic γ^{'}-Fe_{4}N on Si(100) substrate by molecular beam epitaxy,"

Physics Procedia 11 (2011) 193. - K. Harada, K. S. Makabe, H. Akinaga, and T. Suemasu,

" Magnetoresistance characteristics of Fe_{3}Si/CaF_{2}/Fe_{3}Si heterostructures grown on Si(111) by molecular beam epitaxy,"

Physics Procedia 11 (2011) 15. - K. Akutsu, M. Suzuno, H. Kawakami, and T. Sueamsu,

" Reduction of carrier concentraion of β-FeSi_{2}films by atomic hydrogen-assisted molecular beam epitaxy,"

Physics Procedia 11 (2011) 19. - H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Sueamsu,

" Molecular beam epitaxy of β-FeSi_{2}films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC,"

Physics Procedia 11 (2011) 23. - H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu,

" Effect of introducing β-FeSi_{2}template layers on defect density and minority carrier diffusion length in Si region nearby p-β-FeSi_{2}/n-Si heterointerface,"

Japanese Journal of Applied Physics 50 (2011) 041303. - Mina Jung, A. Okada, T. Saito, T. Suemasu, Chan-Yeup Chung, Y. Kawazoe, and N. Usami,

" In situ Observation of Polycrystalline Si Thin Films Grown Using Al-Doped Zinc Oxide on Glass Substrate by the Aluminum-induced Crystallization,

Japanese Journal of Applied Physics 50 (2011) 04DP02. - T. Suemasu, T. Saito, K. Toh, A. Okada, and M. Ajmal Khan,

" Photoresponse properties of BaSi_{2}epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells, "

Thin Solid Films 519 (2011) 8501. - K. S. Makabe, M. Suzuno, K. Harada, T. Suemasu, and H. Akinaga,

" Fabrication of Fe_{3}Si/CaF_{2}heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy,"

Thin Solid Films 519 (2011)8509. - M. Suzuno, K. Akutsu, H. Kawakami, K. Akiyama, and T. Suemasu,

" Metalorganic chemical vapor deposition of β-FeSi_{2}and β-FeSi_{2}seed crystals formed on Si substrates,"

Thin Solid Films 519 (2011) 8473. - K. Ito, G. H. Lee, and T. Suemasu,

" Epitaxial growth of ferromagnetic Fe_{4}N thin films on SrTiO_{3}(001) substrates by molecular beam epitaxy,"

Journal of Physics: Conference Series 266 (2011) 012091. - K. Harada, K. S. Makabe, H. Akinaga, and T. Suemasu,

" Room temperature magnetoresistance in Fe_{3}Si/CaF_{2}/Fe_{3}Si MTJ epitaxially grown on Si(111),"

Journal of Physics: Conference Series 266 (2011) 012088.

- H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima, and T. Suemasu,

" Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization, "

Journal of Crystal Growth 312 (2010) 3257. - M. Jung, A. Okada, T. Saito, T. Suemasu, and N. Usami

" On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Si Thin Films Grown by Al-Induced Crystallization,"

Applied Physics Express 3 (2010) 095803. - T. Saito, Y. Matsumoto, R. Sasaki, M. Takeishi, and T. Suemasu,

" Impact of thin island-like BaSi2 template on the formation of n^{+}-BaSi_{2}/p^{+}-Si tunnel junction on Si(111) surface by molecular beam epitaxy,"

Japanese Journal of Applied Physics 49 (2010) 068001. - K. S. Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,

" Improved Reproducibility in CaF_{2}/Fe_{3}Si/CaF_{2}Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics 49 (2010) 060212. - M. Suzuno, T. Koizumi, H. Kawakami and T. Suemasu,

" Enhanced Room-Temperature 1.6μm Electroluminescence from Si-Based Double Heterostructure Light-Emitting Diodes Using Iron Disilicide,"

Japanese Journal of Applied Physics 49 (2010) 04DG16. - Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami, and M. Sasase,

" Epitaxial Growth and Photoresponse Properties of BaSi_{2}Layers toward Si-Based High-Efficiency Solar Cells,"

Japanese Journal of Applied Physics 49 (2010) 04DP05. - T. Saito, Y. Matsumoto, M. Suzuno, M. Takeisi, R. Sasaki, T. Suemasu, and N. Usami

" Fabrication of n^{+}-BaSi_{2}/p^{+}-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications,"

Applied Physics Express 3 (2010) 021301.

- 末益崇,

" シリサイド半導体(BaSi_{2})を用いたSi系薄膜結晶太陽電池を目指して,"

金属 Vol. 79, No.11 (2009) 48-52. - T. Saito, D. Tsukada, Y. Matsumoto, R. Takeishi, M. Takeisi, T. Ootsuka, and T. Suemasu,

" Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi_{2}Epitaxial Films Grown by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics 48 (2009) 106507 (4 pages). - K. Sadakuni, T. Harianto, H. Akinaga, and T. Suemasu,

" CaF_{2}/Fe_{3}Si/CaF_{2}Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy, "

Applied Physics Express 2 (2009) 063006. - A. Narahara, K. Ito, T. Suemasu, Y. K. Takahashi, A. Ranajikanth, and K. Hono,

" Spin polarization of Fe_{4}N thin films determined by point-contact Andreev reflection,"

Applied Physics Letters 94 (2009) 202502. - D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu,

" Fabrication of (111)-oriented Si layers on SiO_{2}substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi_{2}layers for photovoltaic application,"

Journal of Crystal Growth 311 (2009) 3581. - D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu,

" Photoresponse Properties of Polycrystalline BaSi_{2}Films Grown on SiO_{2}Substrates Using (111)-Oriented Si Layers by an Aluminum-induced Crystallization Method,"

Applied Physics Express 2 (2009) 051601. - M. Suzuno, T. Koizumi, and T. Suemasu,

" p-Si/β-FeSi_{2}/n-Si double-heterostructure light-emitting diodes achieving 1.6μm electroluminescence of 0.4 mW at room temperature,"

Applied Physics Letters 94 (2009) 213509. - 金子将士, 木下恭一, 末益崇, 小田原修, 依田眞一,

" Traveling Liquidus-Zone (TLZ)法により成長するバルクInGaAsの単結晶化初期状態の観察, "

日本マイクログラビティ応用学会誌 Vol. 26, No.2 (解説) (2009) 95-99. - A. Narahara, K. Ito, and T. Suemasu,

" Growth of ferromagnetic Fe_{4}N epitaxial layers and a-axis-oriented Fe_{4}N/MgO/Fe magnetic tunnel junction on MgO(001) substrates using molecular beam epitaxy, "

Journal of Crystal Growth 311 (2009) 1616. - H. Junhua, T. Kurokawa, T. Suemasu, S. Takahara, M. Itakura, and H. Tatsuoka,

" Growth of manganese silicide layers on Si substrates using MnCl_{2}source, "

physica status solidi A 206 (2009) 233. - Y. Warashina, Y. Ito, T. Nakamura, H. Tatsuoka, J. Snyder, M. Tanaka, T. Suemasu, Y. Anma, M. Shimomura, and Y. Hayakawa,

" Growth of Ca-Germanide and Ca-Silicide Crystals by Mechanical Alloying, "

e-Journal of Surface Science and Nanotechnology 7 (2009) 129-133. - Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu,

" Photoresponse Properties of Semiconducting BaSi_{2}Epiaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy, "

Applied Physics Express 2 (2009) 021101.

- T. Sato, Y. Kondo, T. Sekiguchi, and T. Suemasu,

" Sb Surfactant Effect on Defect Evolution in Compressively Strained In_{0.80}Ga_{0.20}As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy,"quot;

Applied Physics Express 1 (2008) 111202. - T. Harianto, K. Sadakuni, H. Akinaga and T. Suemasu,

" Fabrication and Current-Voltage Characteristics of Fe_{3}Si/CaF_{2}/Fe_{3}Si Magnetic Tunnel Junction,"

Japanese Journal of Applied Physics 47 (2008) 6310-6311. - Y. Ichikawa, M. Kobayashi, M. Sasase, and T. Suemasu,

" Molecular beam epitaxy of semiconductor(BaSi_{2})/metal(CoSi_{2}) hybrid structures on Si(111) substrates for photovoltaic application,"

Applied Surface Science 254 (2008) 7963-7967. - T. Ootsuka, T. Suemasu, J. Chen, T. Sekiguchi, and Y. Hara,

" Lifetime and diffusion length of photogenerated minority carriers in single-crystalline β-FeSi_{2}bulk,"

Applied Physics Letters 92 (2008) 192114 (3 pages). - M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu,

" Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi_{2}with Impurities Grown by Molecular Beam Epitaxy ,"

Applied Physics Express 1 (2008) 051403 (3 pages). - T. Koizumi, S. Murase, M. Suzuno, and T. Suemasu,

" Room-temperature 1.6μm Electroluminescence from p^{+}-Si/β-FeSi_{2}/n^{+}-Si Diodes on Si(001) without High-temperature Annealing,"

Applied Physics Express 1 (2008) 051405 (3 pages). - M. Suzuno, S. Murase, T. Koizumi, and T. Suemasu,

" Improved Room-Temperature 1.6μm Electroluminescence from p-Si/β-FeSi_{2}/n-Si Double Heterostructures Light-Emitting Diodes ,"

Applied Physics Express 1 (2008) 021403 (3 pages). - T. Suemasu, M. Sasase, Y. Ichikawa, M. Kobayashi, and D. Tsukada,

" Semiconductor(BaSi_{2})/metal(CoSi_{2}) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy,"

Journal of Crystal Growth 310 (2008) 1250-1255. - T. Ootsuka, T. Suemasu, J. Chen, and T. Sekiguchi,

" Evaluation of minority-carrier diffusion length in n-type β-FeSi_{2}single crystals by electron-beam-induced current,"

Applied Physics Letters 92 (2008) 042117 (3 pages).

- M. Suzuno, Y. Ugajin, S. Murase, T. Suemasu, M. Uchikoshi, and M. Isshiki,

"Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi_{2}grown by molecular-beam epitaxy, "

Journal of Applied Physics 102 (2007) 103706 (5 pages). - A. Narahara, K. Yamaguchi, and T. Suemasu,

"Growth of highly oriented crystalline α-Fe/AlN/Fe_{3}N trilayer structures on Si(111) substrates by molecular beam epitaxy, "

Journal of Crystal Growth 309 (2007) 25-29. - A. Narahara and T. Suemasu,

" Growth of Nitride-Based Fe_{3}N/AlN/Fe_{4}N Mangetic Tunnel Junction Structures on Si(111) Substrates,"

Japanese Journal of Applied Physics Vol. 46, No. 37 (2007) L892-L894 (Express Letter). - T. Ootsuka, Y. Fudamoto, M. Osamura, T. Suemasu, Y. Makita, Y. Fukuzawa, and Y. Nakayama,

" Photoresponse properties of Al/n-β-FeSi_{2}Schottky diodes using β-FeSi_{2}single crystals,"

Applied Physics Letters 91 (2007) 142114 (3 pages). - T. Harianto, K. Kobayashi, T. Suemasu, and H. Akinaga,

" Epitaxial Growth and Magnetic Properties of Fe_{3}Si/CaF_{2}/Fe_{3}Si Tunnel Junction Structures on CaF_{2}/Si(111),"

Japanese Journal of Applied Physics Vol. 46, No. 37 (2007) L904-L906. - T. Suemasu, Y. Ugajin, S. Murase, T. Sunohara, and M. Suzuno,

"Photoluminescence decay time and electroluminescence of p-Si/βbeta;-FeSi_{2}particles/n-Si and p-Si/β-FeSi_{2}film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy,"

Journal of Applied Physics 101 (2007) 124506 (6 pages). - 末益 崇、今井庸二,

"多元系シリサイドの新展開 -半導体BaSi2を例に-,"

応用物理第76巻, 第3号 (最近の展望) (2007) 264-268. - T. Suemasu, K. Morita, and M. Kobayashi,

"Molecular beam epitaxy of band-gap-tunable ternary semiconducting silicide Ba_{1-x}Sr_{x}Si_{2}for photovoltaic application,"

Journal of Crystal Growth 301 (2007) 680-683. - K. Yamaguchi, T. Yui, K. Yamaki, I. Kakeya, K. Kadowaki, and T. Suemasu,

" Epitaxial Growth of Ferromagnetic Fe_{3}N Films on Si (111) substrates by Molecular Beam Epitaxy,"

Journal of Crystal Growth 301-302 (2007) 597-601. - S. Murase, T. Sunohara, and T. Suemasu,

" Epitaxial growth and luminescence characterization of Si/β-FeSi_{2}/Si multilayered structures by molecular beam epitaxy,"

Journal of Crystal Growth 301-302 (2007) 676-679. - T. Wakayama, T. Suemasu, M. Yamazaki, T. Kanazawa, and H. Akinaga,

" Inductively coupled plasma-reactive ion etching for β-FeSi_{2}film, "

Thin Solid Films 515 (2007) 8166-8168. - K. Morita, M. Kobayashi and T. Suemasu,

" Effect of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba_{1-x}Sr_{x}Si_{2}, "

Thin Solid Films 515 (2007) 8216-8218. - Y. Ugajin, T. Sunohara and T. Suemasu,

" Investigation of current injection in β-FeSi_{2}/Si double-heterostructures light-emitting diodes by molecular beam epitaxy,"

Thin Solid Films 515 (2007) 8136-8139. - K. Kobayashi, T. Suemasu, N. Kuwano, D. Hara, and H. Akinaga,

" Epitaxial growth of Fe_{3}Si/CaF_{2}/Fe_{3}Si magnetic tunnel junction structures on CaF_{2}/Si(111) by molecular beam epitaxy,"

Thin Solid Films 515 (2007) 8254-8258. - M. Kobayashi, K. Morita, and T. Suemasu,

"Growth and characterization of group-III impurity-doped semiconducting BaSi_{2}films grown by molecular beam epitaxy, "

Thin Solid Films 515 (2007) 8242-8245. - M. Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu,
T.Matsuyama, and H. Tatsuoka,

"Preparation of β-FeSi_{2}Substrates by Molten Salt Method, "

Thin Solid Films515 (2007) 8268-8271. - T.Suemasu, Y. Ugajin, K. Morita, S. Murase, M. Kobayashi, Y. Ichikawa, and M. Suzuno,

"Semiconducting silicide photonic devices, "

Proceedings of SPIE 6775 (2007) 19. - T. Suemasu, Cheng. Li, T. Sunohara, Y. Ugajin, K. Kobayashi, S. Murase, and F. Hasegawa

"Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region, "

Proceedings of MRS 2006 Fall Meetings 958, 3-12. - K. Akiyama, S. Kaneko, T. Kiguchi, T. Suemasu, T. Kimura, and H. Funakubo,

"Crystal Growth of β-FeSi_{2}Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates, "

Proceedings of MRS 2006 Fall Meetings 980, 351-356.

- K. Akiyama, S. Kaneko, Y. Hirabayashi, T.Suemasu,, and H. Funakubo,

"Horizontal growth of epitaxial (100) β-FeSi_{2}templates by metal-organic chemical vapor deposition,"

Journal of Crystal Growth 287 (2006) 694-697. - Cheng Li, T.Suemasu and F. Hasegawa,

"Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi_{2}particles active region,"

Journal of Luminescence 118 (2006) 330-334. - Cheng Li, Hongkai Laia, Songyan Chena, T. Suemasu, and F. Hasegawa,

"Improvement of luminescence from β-FeSi_{2}particles embedded in silicon, with high temperature silicon buffer layer, "

Journal of Crystal Growth 290 (2006) 176-179. - K. Morita, M. Kobayashi, and T. Suemasu,

"Optical Absorption Edge of Ternary Semiconducting Silicide Ba_{1-x}Sr_{x}Si_{2},"

Japanese Journal of Applied Physics Vol. 45, No. 14 (2006) L390-L392. - T. Suemasu, K. Morita, M. Kobayashi, M. Saida, and M. Sasaki,

"Band Diagrams of BaSi_{2}/Si Structure by Kelvin Probe and Current-Voltage Characteristics ,"

Japanese Journal of Applied Physics Vo.45, No. 20 (2006) L519-L521. - T. Sunohara, K. Kobayashi, and T. Suemasu,

"Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi_{2}/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,"

Thin Solid Films 508 (2006) 371-375. - K. Morita, Y. Inomata, and T. Suemasu,

"Optical and electrical properties of semiconducting BaSi_{2}thin films on Si substrates grown by molecular beam epitaxy,"

Thin Solid Films 508 (2006)363-366. - Y. Ugajin, M. Takauji and T. Suemasu,

"Annealing temperature dependence of EL properties of Si/β-FeSi_{2}/Si(111) double-heterostructures light-emitting diodes,"

Thin Solid Films 508 (2006) 376-379. - K. Kobayashi, T. Sunohara, M. Umada, H. Yanagihara, E. Kita, and T.
Suemasu,

"Epitaxial growth of Fe_{3}Si/CaF_{2}/Si(111) hybrid structures by molecular beam epitaxy,"

Thin Solid Films 508 (2006) 78-81. - T. Wakayama, T. Suemasu, T. Kanazawa, and H. Akinaga,

"Reactive ion etching of β-FeSi_{2}with inductively coupled plasma,"

Japanese Journal of Applied Physics Vol. 45, No. 22 (2006) L569-L571. - K.Yamaguchi, T.Yui, Y.Ichikawa, K.Yamaki, I.Kakeya, K.Kadowaki, and T.Suemasu,

"Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe_{3}N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers,"

Japanese Journal of Applied Physics Vol. 45, No. 27 (2006) L705-L707. - Cheng Li, Hongkai Lai, Songyan Chen, T. Suemasu, and F. Hasegawa,

"Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes,"

Journal of Applied Physics Vol. 100 (2006) 023506 (4 pages).

- M. Takauji, C. Li, T. Suemasu, and F. Hasegawa,

"Fabrication of p-Si/β-FeSi_{2}/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol. 44, No.4B (2005) 2483-2486. - K. Takakura, H. Ohyama, K. Takarabe, T. Suemasu, and F. Hasegawa,

"Hole mobility of p-type β-FeSi_{2}thin films grown from Si/Fe multi-layers,"

Journal of Applied Physics Vol. 97 (2005) 093716. - K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki,
and F. Hasegawa,

"Cr concentration dependence of magnetic and electical properties of Cr-doped GaN films on Si(111) by MOMBE,"

phys. stat. sol. (c) 2, No.7 (2005) 2488-2491. - C.Li, T. Suemasu and F. Hasegawa,

"Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi_{2}particles embedded in the intrinsic silicon,"

Journal of Applied Physics Vol. 97 (2005) 043529. - T. Sunohara, K. Kobayashi, M. Umada, H. Yanagihara, E. Kita, H. Akinaga,
and T. Suemasu,

"Epitaxial Growth of Ferromagnetic Fe3Si Films on CaF_{2}/Si(111) by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol.44, No.22 (2005) L715-L717. - T. Sunohara, C. Li, Y. Ozawa, T. Suemasu, and F. Hasegawa,

"Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi_{2}-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol.44, No.6A (2005) 3951-3953. - K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki,
and F. Hasegawa,

"Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy,"

Japanese Journal of Applied Physics Vo. 44, No. 9A (2005) 6510-6512. - 末益 崇,

"シリサイド半導体の応用,"

機能材料 Vol.25, No.10 (2005) 54-60.

- M. Suzuki, T. Sato, T. Suemasu, and F. Hasegawa,

"Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN,"

phys. stat. sol. (a) 201, No. 12 (2004) 2782-2785. - K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki,
and F. Hasegawa,

"Disagreement between Magnetic and Magneto-Optical Properties in Cr-Doped GaN Films on Si(111) Substrates by Metal Organic Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol.43, No. 10A (2004) L1312 -L1314. - M.Takauji, N.Seki, T.Suemasu, F.Hasegawa, and M.Ichida,

"Growth of Si/β-FeSi_{2}/Si double-heterostructure on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements,,"

Journal of Applied Physics Vol. 96, No. 5 (2004) 2561-2565. - T.Saito, T.Sueamsu, K.Yamaguchi, K.Mizushima, and F.Hasegawa,

"Molecular Beam Epitaxy of Highly [100]-Oriented β-FeSi_{2}Films on Lattice-Matched Strained-Si(001) Surface Using Si_{0.7}Ge_{0.3}Layers,"

Japanese Journal of Applied Physics Vol. 43, No. 7B (2004) L957-L959. - Y.Mori, Y.Sumida, K.Takarabe, T.Suemasu, F.Hasegawa, H.Udono, and I.Kikuma,

"Reflection and absorption spectra of β-FeSi_{2}under pressure,"

Thins Solid Films, Vol. 461 (2004) 171-173. - T. Suemasu, K. Takakura, C. Li, Y. Ozawa, Y. Kumagai, and F Hasegawa,

"Epitaxial growth of semiconducting β-FeSi_{2}and its application to light-emitting diodes,"

Thin Solid Films, Vol. 461 (2004) 209-218. - Y.Inomata, T.Nakamura, T.Suemasu, and F.Hasegawa,

"Epitaxial growth of semiconducting BaSi_{2}thin films on Si(111) substrates by reactive deposition epitaxy,"

Japanese Journal of Applied Physics Vol.43, No. 7A (2004) 4155-4156. - T.Suemasu, M.Takauji, Cheng Li, Y.Ozawa, M.Ichida, and F.Hasegawa,

"Time-Resolved Photoluminescence Study of Si/β-FeSi_{2}/Si Structures Grown by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics 43, No. 7A (2004) L930-L933. - Y.Inomata, T.Suemasu, T.Izawa, and F.Hasegawa,

"Epiaxial Growth of Si-Based Ternary Alloy Semiconductor Ba_{1-x}Sr_{x}Si_{2}Films on Si(111) Substrates by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol.43, 6B (2004) L771-L773. - Y.Ozawa, T.Ohtsuka, Cheng Li, T.Suemasu, and F.Hasegawa,

"Influence of β-FeSi_{2}particle size and Si growth rate on 1.5μm photoluminescence from Si/β-FeSi_{2}-particles/Si structures grown by molecular-beam epitaxy,"

Journal of Applied Physics Vol.95, No.10 (2004) 5483. - K.Akiyama, T.Kimura, T.Suemasu, F.Hasegawa, Y.Maeda, and H.Funakubo,

"Growth of Epitaxial β-FeSi_{2}Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition,"

Japanese Journal of Applied Physics Vol.43, No.4B (2004) L551-L553. - Y.Inomata, T.Nakamura, T.Suemasu, and F.Hasegawa,

"Epitaxial growth of semiconducting BaSi_{2}thin films on Si(111) substrates by molecular beam epitaxy,"

Japanese Journal of Applied Physics Vol.43, No.4A (2004) L478-L481. - K.Yamaguchi, H.Tomioka, T.Sato, R.Souda, T.Suemasu, and F.Hasegawa,

"Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol. 43, No.2A (2004) L151-L153. - C.Li, Y.Ozawa, T.Suemasu, and F.Hasegawa,

"Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emiiting Diode with β-FeSi_{2}Active Region,"

Japanese Journal of Applied Physics Vol. 43, No. 11B (2004) L1492 - L1494.

- N.Seki, K.Takakura, T.Suemasu, and F.Hasegawa:

"Conduction type and defect levels of β-FeSi_{2}films grown by MBE with different Si/Fe ratios,"

Materials Science in Semicondutor Processing Vol.6, Nos.5-6 (2003) 307-309. - Cheng Li, T.Ohtsuka, Y.Ozawa, T.Suemasu, and F.Hasegawa:

"Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi_{2}particles embedded in Si matrix,"

Journal of Applied Physics Vol.94, No.3 (2003) 1518-1520. - 末益崇、長谷川文夫

"シリサイド系半導体LED 光インターコネクション用光源を目指して "

オプトロ二クス（解説）第22巻, 第261号 (2003) 137-144. - T.Suemasu, K.Yamaguchi, H.Tomioka, and F.Hasegawa:

"Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(111)A substrates,"

phys. status solidi (c) 0, No.7 (2003) 2860-2863.

- M.Namerikawa, T.Sato, O.Takahashi, T.Suemasu, and F.Hasegawa:

"Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layers,"

Journal of Crystal Growth 237-239 (2002) 1089-1093. - K.Takakura, N.Seki, T.Suemasu, and F.Hasegawa:

"Comparison of donor and acceptor levels in undoped, high quality β-FeSi_{2}films grown by MBE and multi-layer method"

International Journal of Modern Physics B 16 (2002) 4314-4317. - T.Nakamura, T.Suemasu, K.Takakura, F.Hasegawa, A.Wakahara, and M.Imai:

"Investigation of the energy band structure of orthorhombic BaSi_{2}by optical and electrical measurements and theoretical calculations,"

Applied Physics Letters Vol.81, No.6 (2002) 1032-1034. - 末益崇、長谷川文夫

"環境に優しい光半導体 β-FeSi_{2}の現状と将来展望"

まてりあ （解説) Vol.41, No.5 (2002) 342-347. - 末益崇、長谷川文夫

"鉄シリサイド光デバイスの最前線"

マテリアルインテグレーション （解説) Vol.15, No.5 (2002) 13-18. - K.Takarabe, R.Teranisi, J.Oinuma, Y.Mori, T.Suemasu, S.F.Chichibu, and F.Hasegawa:

"Optical Absorption of β-FeSi_{2}Under Pressure,"

Physical Review B Vol.65 (2002) 165215. - K.Takakura, N.Hiroi, T.Suemasu, S.F.Chichibu, and F.Hasegawa:

"Investigation of direct and indirect bandgaps of [100]-oriented nearly strain-free β-FeSi_{2}films grown by molecular-beam epitaxy,"

Applied Physics Letters Vol.80, No.4 (2002) 556.

- 知京豊裕、成毛環美、パールハット=アヘメト、朱敏、末益崇、長・J川文夫:

"Si結晶中に埋込まれたFeSi_{2}のTEM観察,"

日本金属学会誌 "まてりあ" Vol.40, No.12 (2001) 1013. - N.Hiroi, T.Suemasu, K.Takakura, N.Seki, and F.Hasegawa:

"Direct Growth of [100]-Oriented High-Quality β-FeSi_{2}Films on Si(001) Substrates by Molecular Beam Epitaxy,"

Japanese Journal of Applied Physics Vol.40, No.10A (2001) L1008-L1011. - T.Suemasu, Y.Negishi, K.Takakura and F.Hasegawa, and T. Chikyow:

"Influence of Si growth temperature for embedding β-FeSi_{2}and resultant strain in β-FeSi_{2}on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes,"

Applied Physics Letters Vol.79, No.12 (2001) 1804-1806. - K.Takarabe, R.Teranishi, J.Oinuma, Y.Mori, T.Suemasu, S.Chichibu, and F.Hasegawa:

"Optical Absorption Spectra of β-FeSi_{2}under Pressure,"

phys.stat.sol. (b) Vol.223 (2001) 259-263. - 長谷川文夫、末益崇:

"鉄シリサイドβ-FeSi_{2}を活性領域とするSi系LEDの室温発光 -Si ICの光配線用光源を目指して-"

真空ジャーナル（最新情報）No.75 (2001) 5-9. - K.Takakura, T.Suemasu, and F.Hasegawa:

"Donor and Acceptor Levels in Undoped β-FeSi_{2}Films Grown on Si(001) Substrates,"

Japanese Journal of Applied Physics Vol.40, No.3B (2001) L249-L251. - T.Suemasu, T.Fujii, K.Takakura, and F.Hasegawa:

"Dependence of photoluminescence from β-FeSi_{2}and induced deep levels in Si on the size of β-FeSi_{2}balls embedded in Si,"

Thin Solid Films Vol.381 (2001) 209-213.

- T.Suemasu, Y.Negishi, K.Takakura, and F.Hasegawa:

"Room Temperature 1.6μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi_{2}Active Region,"

Japanese Journal of Applied Physics Vol.39, No.10B (2000) L1013-L1015 (Express Letter). (JJAP Young Scientist Award 2001.) - K.Takakura, T.Suemasu Y.Ikura, and F.Hasegawa:

"Control of the Conduction Type of Nondoped High Mobility β-FeSi_{2}Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios,"

Japanese Journal of Applied Physics Vol.39, No.8A (2000) L789-L781. - 末益崇、長谷川文夫:

"環境にやさしい直接・J移型半導体β-FeSi_{2}の研究の現状と将来展望,"

応用物理（解説）Vol.69, No.7 (2000) 804-810. - K.Takakura, T.Suemasu, N.Hiroi, and F.Hasegawa:

"Improvement of the Electrical Properties of β-FeSi_{2}Films on Si(001) by High-Temperature Annealing,"

Japanese Journal of Applied Physics Vol.39, No.3A/B (2000) L233-L236. - K.Takakura, T.Suemasu, and F.Hasegawa:

"Growth of Mn Doped-β-FeSi_{2}Films on Si(001) Susbstrates by Reactive Deposition Epitaxy,"

Thin Solid Films Vol.369, No.1-2 (2000) 253-256. - T.Suemasu, Y.Iikura, K.Takakura, and F.Hasegawa:

"Optimum annealing condition for 1.5μm photoluminescence from β-FeSi_{2}balls grown by reactive deposition epitaxy and embedded in Si crystals,"

Journal of Luminescence Vol. 87-89, (2000) 528-531. - 末益・秩A飯倉祐介、高倉健一郎、長谷川文夫:

"分子線エピタキシー法によるβ-FeSi_{2}球のSi中埋込み構造作製と高温アニールによる赤外フォトルミネッセンスの増大,"

レーザー研究 Vol.28, No.2 (2000) 99-102. - 末益崇、高倉健一郎、飯倉祐介、広井典良、長谷川文夫:

"熱反応堆積法を利用した赤外発光β-FeSi_{2}球及び高移動度β-FeSi_{2}膜の作製：高温アニールによる特性改善,"

材料科学（解説）Vol.37, No.1 (2000) 16-20. - M.Sasaki, T.Nakayama, N. Shimoyama, T.Suemasu, and F. Hasegawa:

"Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN,"

Japanese Journal of Applied Physics Vol.39 (2000) 4869-4874. - F.Hasegawa, M.Minami, and T.Suemasu:

"One possibility of obtaining bulk GaN: halide VPE growth at 1000oC on GaAs(111) substrates,"

IEICE Trans. Electron. Vol.E83-C, NO.4, invited, (2000) 633-638. - M.Sasaki, S.Yonemura, T.Nakayama, N.Shimoyama, T.Suemasu, and F.Hasegawa:

"CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine,"

Journal of Crystal Growth Vol.209, No.2-3 (2000) 373-377. - T.Suemasu, M. Sakai, and F.Hasegawa:

"Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: trisdimethylamino-arsine,"

Journal of Crystal Growth Vol.209, No.2-3 (2000) 267-271.

- T.Suemasu, N.Hiroi, T.Fujii, K.Takakura, and F.Hasegawa:

"Growth of Continuous and Highly (100)-oriented β-FeSi_{2}Films on Si(001) from Si/Fe multilayers with SiO_{2}Capping and Templates,"

Japanese Journal of Applied Physics Vol.38, No.8A (1999) L878-L880. - T.Suemasu, Y.Iikura, T.Fujii, K.Takakura, N.Hiroi, and F.Hasegawa:

"Improvement of 1.5μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_{2}Balls in Si by High Temperature Annealing,"

Japanese Journal of Applied Physics Vol.38, No.6A/B (1999) L620-L622. - T.Suemasu, T.Fujii, M. Tanaka, K.Takakura, Y.Iikura, and F.Hasegawa:

"Fabrication of p-Si/β-FeSi_{2}Balls/n-Si Structures by MBE and their Electrical and Optical Properties,"

Journal of Luminescence Vol.80 (1999) 473-477. - F.Hasegawa, M.Minami, K.Sunaba, and T.Suemasu:

"Thick GaN growth on GaAs(111) substrates at 1000^{o}C with HVPE,"

Phys.Stat.Sol.(a) Vol.176 (1999) 421-424. - F.Hasegawa, M.Minami, K.Sunaba, and T.Suemasu:

"Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000^{o}C with Halide Vapor Phase Epitaxy,"

Japanese Journal of Applied Physics Vol.38, No.7A (1999) L700-L702.

- T.Suemasu, T.Fujii, Y.Iikura, K.Takakura, and F.Hasegawa:

"Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi_{2}Balls Embedded in Si Crystals,"

Japanese Journal of Applied Physics Vol.37, No.12B (1998) L1513-L1516. - T.Suemasu, K.Takakura, M.Tanaka, T.Fujii, and F.Hasegawa:

"Magnetotransport Properties of a Single-Crystalline β-FeSi_{2}Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy,"

Japanese Journal of Applied Physics Vol.37, No.3B (1998) L333-L335. - 末益崇、長谷川文夫:
"RDE法によるSi/ β-FeSi
_{2}/Si構造の作製,"

・本結晶成長学会誌（解説）Vol.25, No.1 (1998) 46-54.

- S.Yonemura, T.Yaguchi, H.Tsuchiya, N.Shimoyama, T.Suemasu, and F.Hasegawa:

"Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN,"

Journal of Crystal Growth 188 (1998) 81-85. - H.Tsuchiya, K.Sunaba, M.Minami, T.Suemasu, and F.Hasegawa:

"Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Hydride Vapor Phase Epitaxy,"

Japanese Journal of Applied Physics Vol.37, No.5B (1998) L568-L570. - H.Tsuchiya, K.Sunaba, T.Suemasu, and F.Hasegawa:

"Growth condition dependence of GaN crystal structure on (001) GaAs by hyride vapor-phase epitaxy,"

Journal of Crystal Growth 189/190(1998) 395-400. - T.Yaguchi, S.Yonemura, H.Tsuchiya, N.Shimoyama, T.Suemasu, and F.Hasegawa:

"Dependence of GaN MOMBE growth on nitrogen source: ECR plasma gun structure and monomethyl-hydrazine,"

Journal of Crystal Growth 189/190 (1998) 380-384.

- T.Suemasu, M.Yamamoto, K.Takakura, Y.Kumagai, S. Hashimoto, and F.Hasegawa:

"Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and its Electrical Properties,"

Japanese Journal of Applied Physics Vol.36, No.12A (1997) 7146-7151. - T.Suemasu, M.Tanaka, T.Fujii, S.Hashimoto, Y.Kumagai, and F.Hasegawa:

"Aggregation of Monocrystalline β-FeSi_{2}by Annealing and by Si Overlayer Growth,"

Japanese Journal of Applied Physics Vol.36, No.9A/B (1997) L1225-L1228. - M.Tanaka, Y.Kumagai, T.Suemasu, and F.Hasegawa:

"Formation of β-FeSi_{2}Layers on Si(001) Substrates,"

Japanese Journal of Applied Physics Vol.36, No.6A (1997) 3620-3624. - M.Tanaka, Y.Kumagai, T.Suemasu, and F.Hasegawa:

"Reactive deposition epitaxial growth of β-FeSi_{2}layers on Si(001),"

Applied Surface Science 117/118 (1997) 303-307. - H.Tsuchiya, K.Sunaba, S.Yonemura, T.Suemasu, and F.Hasegawa:

"Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase Epitaxy,"

Japanese Journal of Applied Physics Vol.36, No.1A/B (1997) L1-L3.

- K. Mori, W. Saito, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,

"Room-temperature observation of multiple negative differential resistance in a metal (CoSi_{2})/insulator (CaF_{2}) quantum interference transistor structure,"

Physica B Vol. 227 (1996) 213-215. - T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe, and M. Asada,

"Transfer efficiency of hot electrons in a metal (CoSi2)/insulator (CaF2) quantum interference transistor,"

Surf. Sci. Vol. 361/362 (1996) 209-212. - M. Asada, M. Watanabe, T. Suemasu, Y. Kohno, and W. Saitoh,

"Epitaxial growth of a metal (CoSi_{2})/insulator (CaF_{2}) nanometer-thick heterostructure and its application to quantum-effect devices,"

J. Vac. Sci. & Technol. A Vol. 13, No. 3 (1995) 623-628. - W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,

"Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi_{2})/Insulator(CaF_{2}) Heterostructures and Influence of Parasitic Elements,"

Jpn. J. Appl. Phys. Vol. 34, No. 8B (1995) 4481-4484. - W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,

"Metal(CoSi_{2})/Insultor(CaF_{2}) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate,"

Jpn. J. Appl. Phys. Vol. 34, No. 10A (1995) L1254-L1256. - T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe, and M. Asada,

"Theoretical and Measured Characteristics of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements,"

IEEE Trans. Electron Devices Vol. 42, No. 12 (1995) 2203-2210. - T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Watanabe, and M. Asada,

"Quantum Interference of Electron Wave in Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Hot Electron Transistor Structure,"

Jpn. J. Appl. Phys. Vol. 33, No. 12B (1994) L1762-L1765. - T. Suemasu, Y. Kohno, N. Suzuki, M. Watanabe, and M. Asada,

"Different Characteristics of Metal(CoSi_{2})/Insulator(CaF_{2}) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer,"

IEICE Trans. Electron. Vol. E77-C, No. 9 (1994) 1450-1454. - T. Suemasu, M. Watanabe, J. Suzuki, Y. Kohno, M. Asada, and N. Suzuki,

"Metal(CoSi_{2}) /Insulator(CaF_{2}) Resonant Tunneling Diode,"

Jpn. J.Appl. Phys. Vol. 33, No. 1A (1994) 57-65. - M. Watanabe, T. Suemasu, S. Muratake, and M. Asada,

"Negative differential resistance of metal(CoSi_{2})/insulator(CaF_{2}) triple-barrier resonant tunneling diode,"

Appl. Phys. Let. Vol. 62, No. 3 (1993) 300-302. - T. Suemasu, M. Watanabe, M. Asada, and N. Suzuki,

"Room Temperature Negative Differential Resistance of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Diode,"

Electron. Lett. Vol. 28, No. 15 (1992) 1432-1433. - S. Muratake, M. Watanabe, T. Suemasu, and M. Asada,

"Transistor Action of Metal(CoSi_{2})/Insulator(CaF_{2}) Hot Electron Transistor Structure,"

Electron. Lett. Vol. 28, No. 11 (1992) 1002-1003. - M. Watanabe, S. Muratake, T. Suemasu, H. Fujimoto, S. Sakamori, M. Asada, and S. Arai,

"Epitaxial Growth and Electrical Conductance of Metal(CoSi_{2})/Insulator(CaF_{2}) Nanometer-Thick Layered Structures on Si(111),"

J. Electron. Mater. Vol. 21, No. 8 (1992) 783-789. - T.Suemasu, M.Watanabe, S.Muratake, M.Asada, and N.Suzuki,

"Negative differential resistance in metal (CoSi2)/insulator (CaF2) resonant tunneling diode,"

IEEE Trans. Electron Devices Vol. 39, No. 11 (1992) 2644. - T. Suemasu, Y. Miyamoto, and K. Furuya,

"Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy,"

Jpn. J.Appl. Phys. Vol. 30, No. 10A (1991) L1702-L1704. - Y. Miyamoto, H. Hirayama, T. Suemasu, Y. Miyake, and S. Arai,

" Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment,"

Jpn. J.Appl. Phys. Vol. 30, No. 4B (1991) L672-L674.