Publications

2014
  1. M. Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well", Physical Review B, Vol. 89, 115308 (4 pages), March 2014. PRB
  2. Jun Ishihara, Yuzo Ohno, and Hideo Ohno, "Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires", Japanese Jounal of Applied Physics, Vol. 53, 04EM04 (3 pages), March 2014. JJAP
  3. Jun Ishihara, Yuzo Ohno, and Hideo Ohno, "Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well", Applied Physics Express, Vol. 7, 013001 (4 pages), January 2014. APEX
    2013
  4. Eli Christopher I. Enobio, Keita Ohtani, Yuzo Ohno, and Hideo Ohno, "Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope", Applied Physics Letters, Vol. 103, 231106 (4 pages), December 2013. APL
  5. J. Ishihara, M. Ono, Y. Ohno, and H. Ohno, "A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires", Applied Physics Letters, Vol. 102, 212402 (4 pages), May 2013. APL
  6. M. Ono, J. Ishihara, G. Sato, Y. Ohno, and H. Ohno, "Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field", Applied Physics Express, Vol. 6, 033002 (3 pages), February 2013. APEX
  7. L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, and A. Hirohata, "Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) flms", Physical Review B, Vol. 87, 022401 (5 pages), Janualy 2013. PRB
    2012
  8. P. Das, A. Bajpai, Y. Ohno, H. Ohno, and J. Müller, "On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2", Journal of Applied Physics, Vol. 112, 053921 (4 pages), September 2012. JAP
  9. Eli Christopher I. Enobio, Hiroki Sato, Keita Ohtani, Yuzo Ohno, and Hideo Ohno , "Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope," Japanese Journal of Applied Physics, Vol. 51, 06FE15 (3 pages), June 2012. JJAP
  10. Mohsen Ghali, Keita Ohtani, Yuzo Ohno, and Hideo Ohno, "Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons," Japanese Journal of Applied Physics, Vol. 51, 06FE14 (3 pages), June 2012. JJAP
  11. Mohsen Ghali, Keita Ohtani, Yuzo Ohno and Hideo Ohno, "Generation and control of polarization-entangled photons from GaAs island quantum dots by an electric field," Nature Communications, Vol. 3, 661 (6 pages), February 2012. Nature Communications
    2011
  12. P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth and J. Muller, "Domain wall dynamics in a single CrO2 grain," Journal of Physics: Conference Series, Vol. 303, 012056 (6 pages), 2011. JPCS
  13. J. Ishihara, M. Ono, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well," Japanese Journal of Applied Physics, Vol. 50, 04DM03 (3 pages), April 2011. JJAP
    2010
  14. A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, and M. Kawasaki, "Observation of the fractional quantum Hall effect in an oxide," Nature Materials, Vol. 9, pp. 889-893, November 2010. Nature Mater.
  15. M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta, "Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires," Physica E, Vol. 42, pp. 2685-2689, October 2010. PHYE
  16. J. Misuraca, J. Trbovic, J. Lu, J. Zhao, Y. Ohno, H. Ohno, P. Xiong, and S. V. Molnár, "Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As," Physical Review B, Vol. 81, 045208 (6 pages), September 2010. PRB
  17. S. Matsuzaka, Y. Ohno, and H. Ohno, "Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy", Physica E, Vol. 42, 2702-2706 (5 pages), August 2010. PHYE
  18. T. Takahashi, S. Matsuzaka, Y. Ohno, and H. Ohno "Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well," Physica E, Vol. 42, pp. 2609-2701, March 2010. PHYE
  19. M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well", Applied Physics Letters, Vol. 96, 071907 (3 pages), February 2010. APL
  20. M. Ono, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well", Journal of Superconductivity and Novel Magnetism, Vol. 23, 131 (3 pages), January 2010. J. Supercond
  21. S. Matsuzaka, Y. Ohno, and H. Ohno, "Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration", Journal of Superconductivity and Novel Magnetism, Vol. 23, 37 (3 pages), January 2010. J. Supercond
    2009
  22. S. Matsuzaka, Y. Ohno, and H. Ohno, "Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy ", Physical Review B, Vol. 80, 241305(R) (4 pages), December 2009. PRB
  23. K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells", Applied Physics Letters, Vol. 94, 162104 (3 pages), April 2009. APL
    2008
  24. A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, and M. Kawasaki, "Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric", Applied Physics Letters, Vol. 93, 241905 (3 pages), December 2008. APL
  25. Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, and H. Ohno, "Multipulse operation and optical detection of nuclear spin coherence in a GaAs/AlGaAs quantum well", Physical Review Letters, Vol. 101, 207601 (4 pages), November 2008. PRL
  26. M. Czapkiewicz, P. Zagrajek, J. Wróbel, G. Grabecki, F. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, and H. Ohno, "0.7 anomaly and magnetotransport of disordered quantum wire", Europhysics Letters, Vol. 82, 27003 (6 pages), April 2008. EPL
  27. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "Fabrication of a few-electron In0.56Ga0.44As vertical quantum dot with an Al2O3 gate insulator", Physica E. Vol. 40, pp. 1930-1932, April 2008. PHYE
    2007
  28. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "A few-electron  vertical In0.56Ga0.44As quantum dot with an insulating gate",  Applied Physics Letters, Vol. 91,  232101 (3 pages), December 2007. (Top 20 most downloaded article(December 2007))  APL
  29. Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Yuzo Ohno, Takahiro Hanyu, and Hideo Ohno, "Magnetic tunnel junctions for spintronic memories and beyond", IEEE Transactions on Electron Devices, Vol. 54, No. 5, 991-1002 pages, May 2007. IEEE
  30. A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki, "Quantum Hall effect in polar oxide heterostructures", Science, Vol. 315, pp. 1388-1391, March 2007. Science
  31. T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "(In, Ga)As gated-vertical quantum dot with an Al2O3 insulator", Applied Physics Letters, Vol. 90, 062102 (3 pages), February 2007. APL
  32. T. Kita, M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Spin injection with three terminal device based on (Ga, Mn)As/n+-GaAs tunnel junction", ] Physica Status Solidi (c), Vol. 3, pp. 4164-4167, January 2007. PSS
    2006
  33. Jens Müller, Yongqing Li, Stephane von Molnár, Yuzo Ohno, and Hideo Ohno, "Single-electron switching in AlxGa1-xAs/GaAs Hall devices", Physical Review B, Vol. 74, 125310 (7 pages), September 2006. PRB
  34. M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno, "Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n+-GaAs Esaki diode", Applied Physics Letters, Vol. 89, 012103 (3 pages), July 2006. APL
  35. M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno, "Effect of n+-GaAs thickness and doping density on spin injection of GaMnAs/n+-GaAs Esaki tunnel junction", Physica E, Vol. 32, pp. 438-441, May 2006. PHYE
  36. Jens Müller, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno, "Decomposition of 1/f noise in AlxGa1-xAs/GaAs Hall devices", Physical Review Letters, Vol. 96, 186601 (4 pages), May 2006. PRL
  37. H. Sanada, Y. Kondo, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells", Physical Review Letters, Vol. 96, 067602 (4 pages), February 2006. PRL
    2005
  38. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, and H. Ohno, "Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells", Applied Physics Letters, Vol. 87, 171905 (3 pages), October 2005. APL
  39. C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Spin precession of holes in Wurtzite GaN studied using time-resolved Kerr rotation technique", Physical Review B, Vol. 72, 121203 (4 pages), September 2005. PRB
  40. Yongqing Li, Peng Xiong, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno, "Magnetization reversal in elongated Fe nanoparticles", Physical Review B, Vol. 71, 214425 (6 pages), June 2005. PRB
  41. Jens Müller, Yongqing Li, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno, "Low-frequency noise in submicron GaAs/AlxGa1-xAs Hall devices", Journal of Magnetism and Magnetic Materials, Vol. 290-291, pp. 1161-1164, April 2005. JMMM
  42. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno, "Gate control of dynamic nuclear polarization in GaAs quantum wells", Physical Review Letters Vol. 94, 097601 (4 pages), March 2005. PRL
    2004
  43. Yongqing Li, Cong Ren, Peng Xiong, Stephan von Molánr, Yuzo Ohno, and Hideo Ohno, "Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating", Physical Review Letters, Vol. 93, 246602 (4 pages), December 2004. PRL

  44. E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno and H. Ohno, "Molecular beam epitaxy and properties of Cr-doped GaSb", Journal of Superconductivity, Vol. 17, pp. 349-352, June 2004. J. Supercond

  45. K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno and H. Ohno, "Electron spin dynamics in InGaAs quantum wells", Physica E, Vol. 21, pp. 1007-1011, March 2004. PHYE
    2003
  46. J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H. Ohno, "Zincblende CrSb/GaAs multilayer structures with room-temperature ferromagnetism", Materials Science in Semiconductor Processing, Vol. 6, pp. 507-509, October-December 2003. MSSP

  47. H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno and H. Ohno, "Hysteretic dynamic nuclear polarization in GaAs/AlxGa1-xAs(110) quantum wells", Physical Review B, Vol. 68, 241303 (4 pages), December 2003. PRB

  48. Y. Li, P. Xiong, S. von Molnár, Y. Ohno and H. Ohno, "Magnetization reversal of Iron nanoparticles studied by submicron Hall magnetometry", Journal of Applied Physics, Vol. 93, pp. 7912-7914, May 2003. JAP

  49. J. Nishii, F.M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I. Ohkubo, S. Kishimoto, A.Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H. Koinuma, H.Ohno and M. Kawasaki, "High mobility thin film transistors with transparent ZnO channels", Japanese Journal of Applied Physics, Vol. 42, pp. L347-L349, April 2003. JJAP

  50. M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno, "Electrical electron spin injection with a p+-(Ga, Mn)As/n+-GaAs tunnel junction", Journal of Superconductivity, Vol. 16, pp. 167-170, February 2003. J. Supercond

  51. H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, H. Ohno, "Drift transport of spin-polarized electrons in GaAs", Journal of Superconductivity, Vol. 16, pp. 217-219, February 2003. J. Supercond

  52. D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno, "Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and (Al, Ga, Mn)As", Journal of Superconductivity, Vol. 16, pp. 179-182, February 2003. J. Supercond

  53. F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno, "Spin degree of freedom in ferromagnetic semiconductor heterostructures", Physica E, Vol. 16, pp. 104-110, January 2003. PHYE
    2002
  54. H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura, and H. Ohno, "Relaxation of photoinjected spins during drift transport in GaAs", Applied Physics Letters, Vol. 81, pp. 2788-2790, October 2002. APL

  55. Y. Ohno, I. Arata, F. Matsukura, and H. Ohno, "Valence band barrier at (Ga, Mn)As/GaAs interfaces", Physica E, Vol. 13, pp. 521-524, March 2002. PHYE

  56. Y. Li, P. Xiong, S.von Molánr, S. Wirth, Y. Ohno, and H. Ohno, "Hall magnetometry on a single iron nanoparticle", Applied Physics Letters, Vol. 80, pp. 4644-4646, June 2002. APL

  57. J.H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, and H. Ohno, "Growth and properties of (Ga, Mn)As on Si (100) substrate", Journal of Crystal Growth, Vol. 237-239, pp. 1349-1352, April 2002. JCG

  58. D. K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, and H. Ohno, "Anisotropic electrical spin injection in ferromagnetic semiconductor heterostructures", Applied Physics Letters, Vol. 80, pp. 1598-1600, March 2002. APL

  59. F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani, and H. Ohno, "Control of ferromagnetism in field-effect transistor of a magnetic semiconductor", Physica E, Vol. 12, pp. 351-355, January 2002. PHYE

  60. H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics (Invited)", JSAP International, No. 5, January 2002.
    2001
  61. G. Salis, D. D. Awschalom, Y. Ohno, and H. Ohno, "Origin of enhanced dynamic nuclear polarization and all-optical nuclear magnetic resonance in GaAs quantum wells," Physical Review B, Vol. 64, 195304 (10pages), October 2001. PRB

  62. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-dependent phenomena in ferromagnetic/nonmagnetic III-V heterostructures (Invited)", Solid State Communications, Vol. 119, pp. 281-289, July 2001. SSC

  63. H. Ohno, F. Matsukura, and Y. Ohno, "Spin-Dependent properties of ferromagnetic/nonmagnetic GaAs heterostructures(Invited)", Materials Science and Engineering B, Vol. 84, pp. 70-74, 2001. MSEB

  64. K. Takamura, F. Matsukura, Y. Ohno, and H. Ohno, "Growth and properties of (Ga,Mn)As films with high Mn concentration," Journal of Applied Physics, Vol. 89, pp. 7024-7026, June 2001. JAP

  65. Steven K. H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan, Y. Ohno, H. Ohno, and E. H. Li, "Effect of barrier width on the performance of quantum well infrared photodetector", Infrared Physics & Technology, Vol. 42, pp. 115-121, June 2001. IPT

  66. H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski, M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and H. Ohno, "Dual-band photodetectors based on interband and intersubband transitions", Infrared Physics & Technology, Vol. 42, pp. 163-170, June 2001. IPT

  67. T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in n-modulation doped GaAs/AlGaAs (110) quantum wells", Physica E, Vol. 10, pp. 36-39, May 2001. PHYE

  68. T. Omiya, F. Matsukura, A. Shen, Y. Ohno, and H. Ohno, "Magnetotransport properties of (Ga, Mn)As grown on GaAs (411) A substrates", Physica E, Vol. 10, pp. 206-209, May 2001. PHYE

  69. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno,"Properties of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures", Physica E, Vol. 10, pp. 278-282, May 2001. PHYE

  70. I. Arata, Y. Ohno, F. Matsukura, and H. Ohno, "Temperature dependence of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic semiconductor pn junctions", Physica E, Vol. 10, pp.288-291, May 2001. PHYE

  71. Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, and D. D. Awschalom, "Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructure", Physica E, Vol. 10, pp.489-492, May 2001. PHYE

  72. G. Salis, D.T. Fuchs, J.M. Nikkawa, D.D. Awschalom, Y. Ohno, and H. Ohno, "Optical manipulation of nuclear spin by a two-dimensional electron gas", Physical Review Letters, Vol. 86, pp. 2677-2680, March 2001. PRL
    2000
  73. H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and K. Ohtani, "Electric-field control of ferromagnetism", Nature, Vol. 408, pp. 944-946, December 2000. Nature

  74. J. Yang, H. Yasuda, S. Wang, F. Matsukura, Y. Ohno, and H. Ohno,"Surface morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by molecular beam epitaxy", Applied Surface Science, Vol. 166, pp. 242-246, October 2000. ASS

  75. H. Yasuda, F. Matsukura, Y. Ohno, and H. Ohno, "Arsenic flux dependence of InAs nanostructure formation on GaAs (211)B surface", Applied Surface Science, Vol. 166, pp. 413-417, October 2000. ASS

  76. D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance effect and interlayer coupling of (Ga, Mn)As trilayer structures", Applied Physics Letters, Vol. 77, pp. 1873-1875, September 2000. APL

  77. Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang and H. Ohno, "MBE growth and electroluminescence of ferromagnetic/non-magnetic semiconductor; pn junctions based on (Ga,Mn)As", Applied Surface Science, Vol. 159-160, pp. 308-312, June 2000. ASS

  78. F. Matsukura, E. Abe, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of GaSb with high concentration of Mn", Applied Surface Science, Vol. 159-160, pp. 265-269, June 2000. ASS

  79. K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, and H. Ohno, "Influence of interface bond and buffer material on the optical properties of InAs/AlSb quantum wells grown on GaAs substrates", Applied Surface Science, Vol. 159-160, pp. 313-317, June 2000. ASS

  80. T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, and H. Ohno, "Mobility dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple quantum wells", Physica E, Vol. 7, pp. 1015-1019, May 2000. PHYE

  81. T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotransport properties of (Ga,Mn)As investigated at low temperature and high magnetic field", Physica E, Vol. 7, pp. 976-980, May 2000. PHYE

  82. E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, "Molecular beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb", Physica E, Vol. 7, pp. 981-985, May 2000.  PHYE

  83. T. Wang, J. Bai, S. Sakai, Y. Ohno, and H. Ohno "Magnetotransport studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective mass and scattering time" Applied Physics Letters, Vol. 76, pp. 2737-2739, May 2000. APL

  84. N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spin-dependent scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures", Journal of Applied Physics, Vol. 87, pp. 6436-6438, May 2000. JAP

  85. Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Electron spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum wells", Physica E, Vol 6, pp. 817-820, February 2000. PHYE

  86. S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, and H. Ohno, "Surfactant effect of Mn on the formation of self-organized InAs nanostructures" Journal of Crystal Growth, Vol. 208, pp. 799-803, January 2000. JCG

  87. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, N. Kumada, Y. Ohno, S. Kishimoto, F. Matsukura, and S. Nagahama, "Bilayer v=2 quantum Hall state in parallel high magnetic field", Physica E, Vol. 6, pp. 615-618, February 2000. PHYE
    1999
  88. Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom, "Electrical spin injection in a ferromagentic semiconductor heterostructures", Nature, Vol. 402, pp.790-792, December 1999. Nature

  89. Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation in GaAs (110) quantum wells", Physical Review Letters, Vol. 83, pp. 4196-4199, November 1999.PRL
  90. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S. Kishimoto, F. Matsukura, and N. Kumada, "Interlayer coherence in v = 1 and v = 2 bilayer quantum Hall states", Physical Review B, Vol. 59, pp. 14888-14891, June 1999. PRB

  91. T. Wang , Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and H. Ohno, "Electron mobility exceeding 104 cm2/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate", Applied Physics Letters, Vol. 74, pp. 3531-3533, June 1999. APL

  92. S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and (In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates," Journal of Crystal Growth, Vol. 201-202, pp. 684-688, May 1999. JCG

  93. A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, and H. Ohno, "X-ray diffraction study of InAs/AlSb interface bonds grown by molecular beam epitaxy", Journal of Crystal Growth, Vol. 201-202, pp. 861-863, May 1999. JCG

  94. R. Terauchi, Y. Ohno, T. Atachi, A. Sato, F. Matsukura, A. Tackeuchi, and H. Ohno, "Carrier mobility dependence of electron spin relaxation in GaAs quantum wells", Japanese Journal of Applied Physics, Vol. 38, pp. 2549-2551, April 1999. JJAP

  95. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye and H. Ohno, "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As trilayer structures," J. Magnetics Society of Japan, Vol. 23, pp. 99-101, 1999.
    1998
  96. S. Kishimoto, Y. Ohno, F. Matsukura, and H. Ohno, "Spin dependence of the interlayer tunneling in double quantum wells in the quantum Hall regime", Physica B, Vol. 256-258, pp. 535-539, December 1998. PHYB

  97. N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa, and H. Ohno, "Magnetotunneling spectroscopy of resonant tunneling diode using ferromagnetic (Ga, Mn)As", Physica B, Vol. 256-258, pp. 561-564, December 1998. PHYB

  98. F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye, and H. Ohno, "Magnetotransport properties of all semiconductor (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As tri-layer structures", Physica B, Vol. 256-258, pp. 573-576, December 1998. PHYB

  99. F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, and H. Ohno, "Properties of (Ga,Mn)As and their dependence on molecular beam growth conditions," Inst Phys/ Conf. Ser. No. 162: Chapter 10, Paper presented at 25th Int. Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998, pp. 547-552, 1999

  100. N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto, and Y. Iye "Interlayer exchange in (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures", Applied Physics Letters, Vol. 73, pp. 2122-2124, October 1998. APL

  101. T. Tsuruoka, Y. Oshizumi, S. Ushioda, Y. Ohno, and H. Ohno, "Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope", Applied Physics Letters, Vol. 73, pp. 1544-1546, September 1998. APL

  102. H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous splitting of ferromagnetic (Ga, Mn)As observed by resonant tunneling spectroscopy", Applied Physics Letters, Vol. 73, pp. 363-365, July 1998. APL

  103. Keita Ohtani, Yuzo Ohno, Fumihiro Matsukura, and Hideo Ohno, "Well width dependence of bound to quasi-bound intersubband transition in GaAs quantum wells with multi-quantum barriers", Physica E, Vol. 2, pp. 200-203, July 1998. PHYE

  104. S. P. Guo, H. Ohno, A. Shen, and Y. Ohno, "InAs quantum dots and dashes grown on (100), (211)B, and (311)B GaAs substrates," Physica E, vol. 2, pp. 672-677, July 1998. PHYE

  105. Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, M. Yasumoto and A. Urayama, "v=1 bilayer quantum Hall state at arbitrary electron distribution in a double quantum well", Solid-State Electronics, Vol. 42, pp. 1183-1185, July 1998. SSE

  106. S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki, and H. Ohno, "Etched-backgate field-effect transistor structure for magnetotunneling study of low-dimensional electron systems", Solid-State Electronics, Vol. 42, pp. 1187-1190, July 1998. SSE

  107. A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno, "Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn)As", Physica B, Vol. 249-251, pp. 809-813, June 1998. PHYB

  108. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura, Y. Ohno, M. Yasumoto, and A. Urayama, "Interlayer quantum coherence and anomalous stability of v=1 bilayer quantum Hall state", Physica B, Vol. 249-251, pp. 836-840, June 1998. PHYB

  109. A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, and F. Matsukura, "Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study", Applied Surface Science, Vol. 130-132, pp. 382-386, June 1998. ASS

  110. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "Self-organized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates", Applied Surface Science, Vol. 130-132, pp. 797-802, June 1998. ASS

  111. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F. Matsukura, M. Yasumoto, and A. Urayama, "Phase transition in the v=2 bilayer quantum Hall state", Physical Review Letters, Vol. 80, pp. 4534-4537, May 1998. PRL

  112. Shiping Guo, Hideo Ohno, Aidong Shen, Yuzo Ohno, and Fumihiro Matsukura, "Photoluminescence study of InAs quantum dots and quantum dashes on GaAs (211)B", Japanese Journal of Applied Physics, Vol. 37, pp. 1527-1531, March 1998. JJAP

  113. T. Kuroiwa, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, T. Yasuda, and Y. Segawa, "Faraday rotation of ferromagnetic (Ga,Mn)As", Electronics Letters, Vol. 34, pp. 190-192, January 1998. IEE
    1997
  114. A. Sawada, Z. F. Ezawa, H. Ohno, Y. Hirokoshi, O. Sugie, S. Kishimoto, F. Matsukura, Y. Ohno, and M. Yasumoto, "Anomalous stability of v=1 bilayer quantum Hall state", Solid State Communications, Vol. 103, pp. 447-451, August 1997. SSC

  115. S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs self-organized quantum dashes grown on GaAs(211)B", Applied Physics Letters, Vol. 70, pp. 2738-2740, May 1997. APL

  116. H. Ohno, A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa, and H. Nakajima, "Electric field dependence of intersubband transitions in GaAs/AlGaAs single quantum wells", Applied Surface Science, Vol. 113-114, pp. 90-96, April 1997. ASS

  117. A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, and T. Kuroiwa, "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice structures prepared by molecular beam epitaxy", Japanese Journal of Applied Physics,  Vol. 36, pp. L73-L75, February 1997. JJAP