2014

- M. Ono, J. Ishihara, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno, "Strain and origin of inhomogeneous broadening probed by optically detected nuclear magnetic resonance in a (110) GaAs quantum well", Physical Review B, Vol. 89, 115308 (4 pages), March 2014. PRB
- Jun Ishihara, Yuzo Ohno, and Hideo Ohno, "Direct mapping of photoexcited local spins in a modulation-doped GaAs/AlGaAs wires", Japanese Jounal of Applied Physics, Vol. 53, 04EM04 (3 pages), March 2014. JJAP
- Jun Ishihara, Yuzo Ohno, and Hideo Ohno,
"Direct imaging of gate-controlled persistent spin helix state in a modulation-doped GaAs/AlGaAs quantum well",
Applied Physics Express, Vol. 7, 013001 (4 pages), January 2014.
APEX
**2013** - Eli Christopher I. Enobio, Keita Ohtani, Yuzo Ohno, and Hideo Ohno, "Detection and measurement of electroreflectance on quantum cascade laser device using Fourier transform infrared microscope", Applied Physics Letters, Vol. 103, 231106 (4 pages), December 2013. APL
- J. Ishihara, M. Ono, Y. Ohno, and H. Ohno, "A strong anisotropy of spin dephasing time of quasi-one dimensional electron gas in modulation-doped GaAs/AlGaAs wires", Applied Physics Letters, Vol. 102, 212402 (4 pages), May 2013. APL
- M. Ono, J. Ishihara, G. Sato, Y. Ohno, and H. Ohno, "Coherent Manipulation of Nuclear Spins in Semiconductors with an Electric Field", Applied Physics Express, Vol. 6, 033002 (3 pages), February 2013. APEX
- L. R. Fleet, K. Yoshida, H. Kobayashi, Y. Kaneko, S. Matsuzaka, Y. Ohno, H. Ohno, S. Honda, J. Inoue, and A. Hirohata,
"Correlating the interface structure to spin injection in abrupt Fe/GaAs(001) flms",
Physical Review B, Vol. 87, 022401 (5 pages), Janualy 2013.
PRB
**2012** - P. Das, A. Bajpai, Y. Ohno, H. Ohno, and J. Müller, "On the influence of nanometer-thin antiferromagnetic surface layer on ferromagnetic CrO2", Journal of Applied Physics, Vol. 112, 053921 (4 pages), September 2012. JAP
- Eli Christopher I. Enobio, Hiroki Sato, Keita Ohtani, Yuzo Ohno, and Hideo Ohno , "Photocurrent Measurements on a Quantum Cascade Laser Device by Fourier Transform Infrared Microscope," Japanese Journal of Applied Physics, Vol. 51, 06FE15 (3 pages), June 2012. JJAP
- Mohsen Ghali, Keita Ohtani, Yuzo Ohno, and Hideo Ohno, "Vertical-Electrical-Field-Induced Control of the Exciton Fine Structure Splitting in GaAs Island Quantum Dots for the Generation of Polarization-Entangled Photons," Japanese Journal of Applied Physics, Vol. 51, 06FE14 (3 pages), June 2012. JJAP
- Mohsen Ghali, Keita Ohtani, Yuzo Ohno and Hideo Ohno, "Generation
and control of polarization-entangled photons from GaAs island quantum
dots by an electric field," Nature Communications, Vol. 3, 661 (6
pages), February 2012. Nature Communications
**2011** - P. Das, F. Porrati, S. Wirth, A. Bajpai, Y. Ohno, H. Ohno, M. Huth and J. Muller, "Domain wall dynamics in a single CrO2 grain," Journal of Physics: Conference Series, Vol. 303, 012056 (6 pages), 2011. JPCS
- J. Ishihara, M. Ono, G. Sato, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Magnetic Field Dependence of Quadrupolar Splitting and Nuclear Spin Coherence Time in a Strained (110) GaAs Quantum Well,"
Japanese Journal of Applied Physics, Vol. 50, 04DM03 (3 pages), April 2011.
JJAP
**2010** - A. Tsukazaki, S. Akasaka, K. Nakahara, Y. Ohno, H. Ohno, D. Maryenko, A. Ohtomo, and M. Kawasaki, "Observation of the fractional quantum Hall effect in an oxide," Nature Materials, Vol. 9, pp. 889-893, November 2010. Nature Mater.
- M. Kohda, J. Ogawa, J. Shiogai, F. Matsukura, Y. Ohno, H. Ohno, J. Nitta, "Width and temperature dependence of lithography-induced magnetic anisotropy in (Ga,Mn)As wires," Physica E, Vol. 42, pp. 2685-2689, October 2010. PHYE
- J. Misuraca, J. Trbovic, J. Lu, J. Zhao, Y. Ohno, H. Ohno, P. Xiong, and S. V. Molnár, "Band-tail shape and transport near the metal-insulator transition in Si-doped Al0.3Ga0.7As," Physical Review B, Vol. 81, 045208 (6 pages), September 2010. PRB
- S. Matsuzaka, Y. Ohno, and H. Ohno, "Detection of local electron and nuclear spin dynamics by time-resolved Kerr microscopy", Physica E, Vol. 42, 2702-2706 (5 pages), August 2010. PHYE
- T. Takahashi, S. Matsuzaka, Y. Ohno, and H. Ohno "Optical detection of zero-field spin precession of high mobility two-dimensional electron gas in a gated GaAs/AlGaAs quantum well," Physica E, Vol. 42, pp. 2609-2701, March 2010. PHYE
- M. Ono, H. Kobayashi, S. Matsuzaka, Y. Ohno, and H. Ohno, "Gate voltage dependence of nuclear spin relaxation in an impurity-doped semiconductor quantum well", Applied Physics Letters, Vol. 96, 071907 (3 pages), February 2010. APL
- M. Ono, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Gate Voltage Control of Nuclear Spin Relaxation in GaAs Quantum Well",
Journal of Superconductivity and Novel Magnetism, Vol. 23, 131 (3 pages), January 2010.
J. Supercond

- S. Matsuzaka, Y. Ohno, and H. Ohno,
"Scanning Kerr Microscopy of the Spin Hall Effect in n-Doped GaAs with Various Doping Concentration",
Journal of Superconductivity and Novel Magnetism, Vol. 23, 37 (3 pages), January 2010.
J. Supercond

**2009** - S. Matsuzaka, Y. Ohno, and H. Ohno, "Electron density dependence of the spin Hall effect in GaAs probed by scanning Kerr rotation microscopy ", Physical Review B, Vol. 80, 241305(R) (4 pages), December 2009. PRB
- K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno,
"Intersubband exchange interaction induced by optically excited electron spins in GaAs/AlGaAs quantum wells",
Applied Physics Letters, Vol. 94, 162104 (3 pages), April 2009.
APL
**2008** - A. Tsukazaki, A. Ohtomo, D. Chiba, Y. Ohno, H. Ohno, and M. Kawasaki, "Low-temperature field-effect and magnetotransport properties in a ZnO based heterostructure with atomic-layer-deposited gate dielectric", Applied Physics Letters, Vol. 93, 241905 (3 pages), December 2008. APL
- Y. Kondo, M. Ono, S. Matsuzaka, K. Morita, H. Sanada, Y. Ohno, and H. Ohno, "Multipulse operation and optical detection of nuclear spin coherence in a GaAs/AlGaAs quantum well", Physical Review Letters, Vol. 101, 207601 (4 pages), November 2008. PRL
- M. Czapkiewicz, P. Zagrajek, J. Wróbel, G. Grabecki, F. Fronc, T. Dietl, Y. Ohno, S. Matsuzaka, and H. Ohno, "0.7 anomaly and magnetotransport of disordered quantum wire", Europhysics Letters, Vol. 82, 27003 (6 pages), April 2008. EPL
- T. Kita, D. Chiba, Y. Ohno, and H. Ohno, "Fabrication of a few-electron In
_{0.56}Ga_{0.44}As vertical quantum dot with an Al_{2}O_{3}gate insulator", Physica E. Vol. 40, pp. 1930-1932, April 2008. PHYE**2007** - T. Kita, D. Chiba, Y. Ohno, and H. Ohno,
"A few-electron vertical In
_{0.56}Ga_{0.44}As quantum dot with an insulating gate", Applied Physics Letters, Vol. 91, 232101 (3 pages), December 2007. (Top 20 most downloaded article(December 2007)) APL - Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Yuzo Ohno, Takahiro Hanyu, and Hideo Ohno, "Magnetic tunnel junctions for spintronic memories and beyond", IEEE Transactions on Electron Devices, Vol. 54, No. 5, 991-1002 pages, May 2007. IEEE
- A. Tsukazaki, A. Ohtomo, T. Kita, Y. Ohno, H. Ohno, and M. Kawasaki, "Quantum Hall effect in polar oxide heterostructures", Science, Vol. 315, pp. 1388-1391, March 2007. Science
- T. Kita, D. Chiba, Y. Ohno, and H. Ohno,
"(In, Ga)As gated-vertical quantum dot with an Al
_{2}O_{3}insulator", Applied Physics Letters, Vol. 90, 062102 (3 pages), February 2007. APL - T. Kita, M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno,
"Spin injection with three terminal device based on (Ga, Mn)As/n
^{+}-GaAs tunnel junction", ] Physica Status Solidi (c), Vol. 3, pp. 4164-4167, January 2007. PSS**2006** - Jens Müller, Yongqing Li, Stephane von Molnár, Yuzo Ohno, and Hideo Ohno,
"Single-electron switching in Al
_{x}Ga_{1-x}As/GaAs Hall devices", Physical Review B, Vol. 74, 125310 (7 pages), September 2006. PRB - M. Kohda, T. Kita, Y. Ohno, F. Matsukura, and H. Ohno,
"Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn)As/n
^{+}-GaAs Esaki diode", Applied Physics Letters, Vol. 89, 012103 (3 pages), July 2006. APL - M. Kohda, Y. Ohno, F. Matsukura, and H. Ohno,
"Effect of n
^{+}-GaAs thickness and doping density on spin injection of GaMnAs/n^{+}-GaAs Esaki tunnel junction", Physica E, Vol. 32, pp. 438-441, May 2006. PHYE - Jens Müller, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno,
"Decomposition of 1/f noise in Al
_{x}Ga_{1-x}As/GaAs Hall devices", Physical Review Letters, Vol. 96, 186601 (4 pages), May 2006. PRL - H. Sanada, Y. Kondo, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno,
"Optical pump-probe measurements of local nuclear spin coherence in semiconductor quantum wells",
Physical Review Letters, Vol. 96, 067602 (4 pages), February 2006.
PRL
**2005** - K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno, and H. Ohno, "Strong anisotropic spin dynamics in narrow n-InGaAs/AlGaAs (110) quantum wells", Applied Physics Letters, Vol. 87, 171905 (3 pages), October 2005. APL
- C. Y. Hu, K. Morita, H. Sanada, S. Matsuzaka, Y. Ohno, and H. Ohno, "Spin precession of holes in Wurtzite GaN studied using time-resolved Kerr rotation technique", Physical Review B, Vol. 72, 121203 (4 pages), September 2005. PRB
- Yongqing Li, Peng Xiong, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno, "Magnetization reversal in elongated Fe nanoparticles", Physical Review B, Vol. 71, 214425 (6 pages), June 2005. PRB
- Jens Müller, Yongqing Li, Stephan von Molnár, Yuzo Ohno, and Hideo Ohno, "Low-frequency noise in submicron GaAs/AlxGa1-xAs Hall devices", Journal of Magnetism and Magnetic Materials, Vol. 290-291, pp. 1161-1164, April 2005. JMMM
- H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno, and H. Ohno,
"Gate control of dynamic nuclear polarization in GaAs quantum wells",
Physical Review Letters Vol. 94, 097601 (4 pages), March 2005.
PRL
**2004** - Yongqing Li, Cong Ren, Peng Xiong, Stephan von Molánr, Yuzo Ohno,
and Hideo Ohno, "Modulation of noise in submicron GaAs/AlGaAs Hall
devices by gating", Physical Review Letters, Vol. 93, 246602 (4 pages),
December 2004. PRL

- E. Abe, K. Sato, F. Matsukura, J. H. Zhao, Y. Ohno and H. Ohno, "Molecular
beam epitaxy and properties of Cr-doped GaSb", Journal of Superconductivity,
Vol. 17, pp. 349-352, June 2004. J. Supercond

- K. Morita, H. Sanada, S. Matsuzaka, C. Y. Hu, Y. Ohno and H. Ohno, "Electron
spin dynamics in InGaAs quantum wells", Physica E, Vol. 21, pp. 1007-1011,
March 2004. PHYE

**2003** - J. H. Zhao, F. Matsukura, K. Takamura, D. Chiba, Y. Ohno, K. Ohtani, H.
Ohno, "Zincblende CrSb/GaAs multilayer structures with room-temperature
ferromagnetism", Materials Science in Semiconductor Processing, Vol.
6, pp. 507-509, October-December 2003. MSSP

- H. Sanada, S. Matsuzaka, K. Morita, C. Y. Hu, Y. Ohno and H. Ohno, "Hysteretic
dynamic nuclear polarization in GaAs/Al
_{x}Ga_{1-x}As(110) quantum wells", Physical Review B, Vol. 68, 241303 (4 pages), December 2003. PRB

- Y. Li, P. Xiong, S. von Molnár, Y. Ohno and H. Ohno, "Magnetization
reversal of Iron nanoparticles studied by submicron Hall magnetometry",
Journal of Applied Physics, Vol. 93, pp. 7912-7914, May 2003. JAP

- J. Nishii, F.M. Hossain, S. Takagi, T. Aita, K. Saikusa, Y. Ohmaki, I.
Ohkubo, S. Kishimoto, A.Ohtomo, T. Fukumura, F. Matsukura, Y. Ohno, H.
Koinuma, H.Ohno and M. Kawasaki, "High mobility thin film transistors
with transparent ZnO channels", Japanese Journal of Applied Physics,
Vol. 42, pp. L347-L349, April 2003. JJAP

- M. Kohda, Y. Ohno, K. Takamura, F. Matsukura, H. Ohno,
"Electrical electron spin injection with a p+-(Ga, Mn)As/n+-GaAs tunnel junction",
Journal of Superconductivity, Vol. 16, pp. 167-170, February 2003.
J. Supercond

- H. Sanada, I. Arata, Y. Ohno, K. Ohtani, Z. Chen, K. Kayanuma, Y. Oka,
F. Matsukura, H. Ohno, "Drift transport of spin-polarized electrons
in GaAs", Journal of Superconductivity, Vol. 16, pp. 217-219, February
2003. J. Supercond

- D. Chiba, M. Yamanouchi, F. Matsukura, E. Abe, Y. Ohno, K. Ohtani, H. Ohno,
"Electric field effect on the magnetic properties of III-V ferromagnetic
semiconductor (In, Mn)As and (Al, Ga, Mn)As", Journal of Superconductivity,
Vol. 16, pp. 179-182, February 2003. J. Supercond

- F. Matsukura, D. Chiba, Y. Ohno, T. Dietl, H. Ohno, "Spin degree of
freedom in ferromagnetic semiconductor heterostructures", Physica
E, Vol. 16, pp. 104-110, January 2003. PHYE

**2002** - H. Sanada, I. Arata, Y. Ohno, Z. Chen, K. Kayanuma, Y. Oka, F. Matsukura,
and H. Ohno, "Relaxation of photoinjected spins during drift transport
in GaAs", Applied Physics Letters, Vol. 81, pp. 2788-2790, October
2002. APL

- Y. Ohno, I. Arata, F. Matsukura, and H. Ohno, "Valence band barrier
at (Ga, Mn)As/GaAs interfaces", Physica E, Vol. 13, pp. 521-524, March
2002. PHYE

- Y. Li, P. Xiong, S.von Molánr, S. Wirth, Y. Ohno, and H. Ohno, "Hall
magnetometry on a single iron nanoparticle", Applied Physics Letters,
Vol. 80, pp. 4644-4646, June 2002. APL

- J.H. Zhao, F. Matsukura, E. Abe, D. Chiba, Y. Ohno, K. Takamura, and H.
Ohno, "Growth and properties of (Ga, Mn)As on Si (100) substrate",
Journal of Crystal Growth, Vol. 237-239, pp. 1349-1352, April 2002. JCG

- D. K. Young, E. Johnston-Halperin, D.D. Awschalom, Y. Ohno, and H. Ohno,
"Anisotropic electrical spin injection in ferromagnetic semiconductor
heterostructures", Applied Physics Letters, Vol. 80, pp. 1598-1600,
March 2002. APL

- F. Matsukura, D. Chiba, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani,
and H. Ohno, "Control of ferromagnetism in field-effect transistor
of a magnetic semiconductor", Physica E, Vol. 12, pp. 351-355, January
2002. PHYE

- H. Ohno, F. Matsukura, and Y. Ohno, "Semiconductor spin electronics
(Invited)", JSAP International, No. 5, January 2002.

**2001** - G. Salis, D. D. Awschalom, Y. Ohno, and H. Ohno, "Origin of enhanced
dynamic nuclear polarization and all-optical nuclear magnetic resonance
in GaAs quantum wells," Physical Review B, Vol. 64, 195304 (10pages), October
2001. PRB

- H. Ohno, F. Matsukura, and Y. Ohno, "Spin-dependent phenomena in ferromagnetic/nonmagnetic
III-V heterostructures (Invited)", Solid State Communications, Vol.
119, pp. 281-289, July 2001. SSC

- H. Ohno, F. Matsukura, and Y. Ohno, "Spin-Dependent properties of
ferromagnetic/nonmagnetic GaAs heterostructures(Invited)", Materials
Science and Engineering B, Vol. 84, pp. 70-74, 2001. MSEB

- K. Takamura, F. Matsukura, Y. Ohno, and H. Ohno, "Growth and properties
of (Ga,Mn)As films with high Mn concentration," Journal of Applied
Physics, Vol. 89, pp. 7024-7026, June 2001. JAP

- Steven K. H. Sim, H. C. Liu, A. Shen, M. Gao, Kevin F. Lee, M. Buchanan,
Y. Ohno, H. Ohno, and E. H. Li, "Effect of barrier width on the performance
of quantum well infrared photodetector", Infrared Physics & Technology,
Vol. 42, pp. 115-121, June 2001. IPT

- H. C. Liu, C. Y. Song, A. Shen, M. Gao, E. Dupont, P. J. Poole, Z. R. Wasilewski,
M. Buchanan, P. H. Wilson, B. J. Robinson, D. A. Thompson, Y. Ohno, and
H. Ohno, "Dual-band photodetectors based on interband and intersubband
transitions", Infrared Physics & Technology, Vol. 42, pp. 163-170,
June 2001. IPT

- T. Adachi, Y. Ohno, F. Matsukura, and H. Ohno, "Spin relaxation in
n-modulation doped GaAs/AlGaAs (110) quantum wells", Physica E, Vol.
10, pp. 36-39, May 2001. PHYE

- T. Omiya, F. Matsukura, A. Shen, Y. Ohno, and H. Ohno, "Magnetotransport
properties of (Ga, Mn)As grown on GaAs (411) A substrates", Physica
E, Vol. 10, pp. 206-209, May 2001. PHYE

- D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno,"Properties
of (Ga,Mn)As/(Al,Ga)As/(Ga,Mn)As magnetic trilayer structures", Physica
E, Vol. 10, pp. 278-282, May 2001. PHYE

- I. Arata, Y. Ohno, F. Matsukura, and H. Ohno, "Temperature dependence
of electroluminescence and I-V characteristics of ferromagnetic/non-magnetic
semiconductor pn junctions", Physica E, Vol. 10, pp.288-291, May 2001.
PHYE

- Y. Ohno, I. Arata, F. Matsukura, H. Ohno, D. K. Young, B. Beschoten, and
D. D. Awschalom, "Electrical spin injection in ferromagnetic/nonmagnetic
semiconductor heterostructure", Physica E, Vol. 10, pp.489-492, May
2001. PHYE

- G. Salis, D.T. Fuchs, J.M. Nikkawa, D.D. Awschalom, Y. Ohno, and H. Ohno,
"Optical manipulation of nuclear spin by a two-dimensional electron
gas", Physical Review Letters, Vol. 86, pp. 2677-2680, March 2001.
PRL

**2000** - H. Ohno, D. Chiba, F. Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, and
K. Ohtani, "Electric-field control of ferromagnetism", Nature,
Vol. 408, pp. 944-946, December 2000. Nature

- J. Yang, H. Yasuda, S. Wang, F. Matsukura, Y. Ohno, and H. Ohno,"Surface
morphologies of III-V based magnetic semiconductor (Ga, Mn)As grown by
molecular beam epitaxy", Applied Surface Science, Vol. 166, pp. 242-246,
October 2000. ASS

- H. Yasuda, F. Matsukura, Y. Ohno, and H. Ohno, "Arsenic flux dependence
of InAs nanostructure formation on GaAs (211)B surface", Applied Surface
Science, Vol. 166, pp. 413-417, October 2000. ASS

- D. Chiba, N. Akiba, F. Matsukura, Y. Ohno, and H. Ohno, "Magnetoresistance
effect and interlayer coupling of (Ga, Mn)As trilayer structures",
Applied Physics Letters, Vol. 77, pp. 1873-1875, September 2000. APL

- Y. Ohno, I. Arata, F. Matsukura, K. Ohtani, S. Wang and H. Ohno, "MBE
growth and electroluminescence of ferromagnetic/non-magnetic semiconductor;
pn junctions based on (Ga,Mn)As", Applied Surface Science, Vol. 159-160,
pp. 308-312, June 2000. ASS

- F. Matsukura, E. Abe, Y. Ohno, and H. Ohno, "Molecular beam epitaxy
of GaSb with high concentration of Mn", Applied Surface Science, Vol.
159-160, pp. 265-269, June 2000. ASS

- K. Ohtani, A. Sato, Y. Ohno, F. Matsukura, and H. Ohno,
"Influence of interface bond and buffer material on the optical properties of InAs/AlSb quantum wells grown on GaAs substrates",
Applied Surface Science, Vol. 159-160, pp. 313-317, June 2000. ASS

- T. Adachi, Y. Ohno, R. Terauchi, F. Matsukura, and H. Ohno, "Mobility
dependence of electron spin relaxation time in n-type InGaAs/InAlAs multiple
quantum wells", Physica E, Vol. 7, pp. 1015-1019, May 2000. PHYE

- T. Omiya, F. Matsukura, T. Dietl, Y. Ohno, T. Sakon, M. Motokawa, and H.
Ohno, "Magnetotransport properties of (Ga,Mn)As investigated at low
temperature and high magnetic field", Physica E, Vol. 7, pp. 976-980,
May 2000. PHYE

- E. Abe, F. Matsukura, H. Yasuda, Y. Ohno, and H. Ohno, "Molecular
beam epitaxy of III-V diluted magnetic semiconductor (Ga,Mn)Sb", Physica
E, Vol. 7, pp. 981-985, May 2000. PHYE

- T. Wang, J. Bai, S. Sakai, Y. Ohno, and H. Ohno "Magnetotransport
studies of AlGaN/GaN heterostructures grown on sapphire substrates: Effective
mass and scattering time" Applied Physics Letters, Vol. 76, pp. 2737-2739,
May 2000. APL

- N. Akiba, D. Chiba, K. Nakata, F. Matsukura, Y. Ohno, and H. Ohno, "Spin-dependent
scattering in semiconducting ferromagnetic (Ga,Mn)As trilayer structures",
Journal of Applied Physics, Vol. 87, pp. 6436-6438, May 2000. JAP

- Y. Ohno, R. Terauchi, T. Adachi, F. Matsukura, and H. Ohno, "Electron
spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum
wells", Physica E, Vol 6, pp. 817-820, February 2000. PHYE

- S. P. Guo, A. Shen, H. Yasuda, Y. Ohno, F. Matsukura, and H. Ohno, "Surfactant
effect of Mn on the formation of self-organized InAs nanostructures"
Journal of Crystal Growth, Vol. 208, pp. 799-803, January 2000. JCG

- A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, N. Kumada, Y. Ohno, S. Kishimoto,
F. Matsukura, and S. Nagahama, "Bilayer v=2 quantum Hall state in
parallel high magnetic field", Physica E, Vol. 6, pp. 615-618, February
2000. PHYE

**1999** - Y. Ohno, D. K. Young, B. Beschoten, F. Matsukura, H. Ohno, and D. D. Awschalom,
"Electrical spin injection in a ferromagentic semiconductor heterostructures",
Nature, Vol. 402, pp.790-792, December 1999. Nature

- Y. Ohno, R. Terachi, T. Adachi, F. Matsukura, and H. Ohno, "Spin relaxation
in GaAs (110) quantum wells", Physical Review Letters, Vol. 83, pp.
4196-4199, November 1999.PRL

- A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, A. Urayama, Y. Ohno, S.
Kishimoto, F. Matsukura, and N. Kumada, "Interlayer coherence in v
= 1 and v = 2 bilayer quantum Hall states", Physical Review B, Vol.
59, pp. 14888-14891, June 1999. PRB

- T. Wang , Y. Ohno, M. Lachab, D. Nakagawa, T. Shirahama, S. Sakai, and
H. Ohno, "Electron mobility exceeding 10
^{4}cm^{2}/Vs in an AlGaN-GaN heterostructure grown on a sapphire substrate", Applied Physics Letters, Vol. 74, pp. 3531-3533, June 1999. APL

- S. P. Guo, A. Shen, F. Matsukura, Y. Ohno, and H. Ohno, "InAs and
(In,Mn)As nanostructures grown on GaAs (100), (211)B, and (311)B substrates,"
Journal of Crystal Growth, Vol. 201-202, pp. 684-688, May 1999. JCG

- A. Sato, K. Ohtani, R. Terauchi, Y. Ohno, F. Matsukura, and H. Ohno, "X-ray
diffraction study of InAs/AlSb interface bonds grown by molecular beam
epitaxy", Journal of Crystal Growth, Vol. 201-202, pp. 861-863, May
1999. JCG

- R. Terauchi, Y. Ohno, T. Atachi, A. Sato, F. Matsukura, A. Tackeuchi, and
H. Ohno, "Carrier mobility dependence of electron spin relaxation
in GaAs quantum wells", Japanese Journal of Applied Physics, Vol.
38, pp. 2549-2551, April 1999. JJAP

- F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye
and H. Ohno, "Magnetotransport properties of (Ga,Mn)As/GaAs/(Ga,Mn)As
trilayer structures," J. Magnetics Society of Japan, Vol. 23, pp.
99-101, 1999.

**1998** - S. Kishimoto, Y. Ohno, F. Matsukura, and H. Ohno, "Spin dependence
of the interlayer tunneling in double quantum wells in the quantum Hall
regime", Physica B, Vol. 256-258, pp. 535-539, December 1998. PHYB

- N. Akiba, F. Matsukura, Y. Ohno, A. Shen, K. Ohtani, T. Sakon, M. Motokawa,
and H. Ohno, "Magnetotunneling spectroscopy of resonant tunneling
diode using ferromagnetic (Ga, Mn)As", Physica B, Vol. 256-258, pp.
561-564, December 1998. PHYB

- F. Matsukura, N. Akiba, A. Shen, Y. Ohno, A. Oiwa, S. Katsumoto, Y. Iye,
and H. Ohno, "Magnetotransport properties of all semiconductor (Ga,
Mn)As/(Al, Ga)As/(Ga, Mn)As tri-layer structures", Physica B, Vol.
256-258, pp. 573-576, December 1998. PHYB

- F. Matsukura, A. Shen, Y. Sugawara, T. Omiya, Y. Ohno, and H. Ohno, "Properties
of (Ga,Mn)As and their dependence on molecular beam growth conditions,"
Inst Phys/ Conf. Ser. No. 162: Chapter 10, Paper presented at 25th Int.
Symp. Compound Semiconductors, Nara, Japan, 12-16 October 1998, pp. 547-552,
1999

- N. Akiba, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, A. Oiwa, S. Katsumoto,
and Y. Iye "Interlayer exchange in (Ga, Mn)As/(Al, Ga)As/(Ga, Mn)As
semiconducting ferromagnet/nonmagnet/ferromagnet trilayer structures",
Applied Physics Letters, Vol. 73, pp. 2122-2124, October 1998. APL

- T. Tsuruoka, Y. Oshizumi, S. Ushioda, Y. Ohno, and H. Ohno,
"Light emision spectra of AsGaAs/GaAs multiquantum wells induced by scanning tunneling microscope",
Applied Physics Letters, Vol. 73, pp. 1544-1546, September 1998. APL

- H. Ohno, N. Akiba, F. Matsukura, A. Shen, K. Ohtani, and Y. Ohno, "Spontaneous
splitting of ferromagnetic (Ga, Mn)As observed by resonant tunneling spectroscopy",
Applied Physics Letters, Vol. 73, pp. 363-365, July 1998. APL

- Keita Ohtani, Yuzo Ohno, Fumihiro Matsukura, and Hideo Ohno, "Well
width dependence of bound to quasi-bound intersubband transition in GaAs
quantum wells with multi-quantum barriers", Physica E, Vol. 2, pp.
200-203, July 1998. PHYE

- S. P. Guo, H. Ohno, A. Shen, and Y. Ohno, "InAs quantum dots and dashes
grown on (100), (211)B, and (311)B GaAs substrates," Physica E, vol.
2, pp. 672-677, July 1998. PHYE

- Y. Ohno, A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F.
Matsukura, M. Yasumoto and A. Urayama, "v=1 bilayer quantum Hall state at arbitrary electron distribution in a double
quantum well", Solid-State Electronics, Vol. 42, pp. 1183-1185, July
1998. SSE

- S. Kishimoto, Y. Ohno, F. Matsukura, H. Sakaki, and H. Ohno, "Etched-backgate
field-effect transistor structure for magnetotunneling study of low-dimensional
electron systems", Solid-State Electronics, Vol. 42, pp. 1187-1190,
July 1998. SSE

- A. Shen, H. Ohno, F. Matsukura, H. C. Liu, N. Akiba, Y. Sugawara, T. Kuroiwa, and Y. Ohno,
"Superlattice and multilayer structures bsed on ferromagnetic semiconductor (Ga, Mn)As",
Physica B, Vol. 249-251, pp. 809-813, June 1998. PHYB

- A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, S. Kishimoto, F. Matsukura,
Y. Ohno, M. Yasumoto, and A. Urayama, "Interlayer quantum coherence
and anomalous stability of v=1 bilayer quantum Hall state", Physica B, Vol. 249-251, pp. 836-840,
June 1998. PHYB

- A. Shen, H. Ohno, Y. Horikoshi, S. P. Guo, Y. Ohno, and F. Matsukura,
"Low-temperature GaAs grown by molecular-beam epitaxy under high As overpressure: A reflection high-energy electron diffraction study",
Applied Surface Science, Vol. 130-132, pp. 382-386, June 1998. ASS

- S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno,
"Self-organized (In,Mn)As diluted magnetic semiconductor nanostructures on GaAs substrates",
Applied Surface Science, Vol. 130-132, pp. 797-802, June 1998. ASS

- A. Sawada, Z. F. Ezawa, H. Ohno, Y. Horikoshi, Y. Ohno, S. Kishimoto, F.
Matsukura, M. Yasumoto, and A. Urayama, "Phase transition in the v=2 bilayer quantum Hall state",
Physical Review Letters, Vol. 80,
pp. 4534-4537, May 1998. PRL

- Shiping Guo, Hideo Ohno, Aidong Shen, Yuzo Ohno, and Fumihiro Matsukura,
"Photoluminescence study of InAs quantum dots and quantum dashes on
GaAs (211)B", Japanese Journal of Applied Physics, Vol. 37, pp. 1527-1531,
March 1998. JJAP

- T. Kuroiwa, F. Matsukura, A. Shen, Y. Ohno, H. Ohno, T. Yasuda, and Y.
Segawa, "Faraday rotation of ferromagnetic (Ga,Mn)As", Electronics
Letters, Vol. 34, pp. 190-192, January 1998. IEE

**1997** - A. Sawada, Z. F. Ezawa, H. Ohno, Y. Hirokoshi, O. Sugie, S. Kishimoto, F. Matsukura, Y. Ohno, and M. Yasumoto, "Anomalous stability of v=1 bilayer quantum Hall state", Solid State Communications, Vol. 103, pp. 447-451, August 1997. SSC

- S. P. Guo, H. Ohno, A. Shen, F. Matsukura, and Y. Ohno, "InAs self-organized
quantum dashes grown on GaAs(211)B", Applied Physics Letters, Vol.
70, pp. 2738-2740, May 1997. APL

- H. Ohno, A. Mathur, Y. Ohno, F. Matsukura, K. Ohtani, N. Akiba, T. Kuroiwa,
and H. Nakajima, "Electric field dependence of intersubband transitions
in GaAs/AlGaAs single quantum wells", Applied Surface Science, Vol. 113-114,
pp. 90-96, April 1997. ASS

- A. Shen, H. Ohno, F. Matsukura, Y. Sugawara, Y. Ohno, N. Akiba, and T.
Kuroiwa, "(Ga, Mn)As/GaAs diluted megnetic semiconductor superlattice
structures prepared by molecular beam epitaxy", Japanese Journal of
Applied Physics, Vol. 36, pp. L73-L75, February 1997. JJAP