International


International

2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997

    FY 2018

  1. (invited) Takashi Suemasu,
    " Significant impact of Ba to Si deposition rate ratios during molecular beam epitaxy on electrical and optical properties of BaSi2 absorber layers, "
    The Forum on the Science and Techonology of Silicon Materials, Okayama, Japan, November 21, 2018.
  2. (invited) Takashi Suemasu,
    " Present status and future prospect of BaSi2 solar cells, "
    4th International Asian School Conference on Physics and Technology of Nanostructured Materials (ASCO-NANOMAT), Vladivostok, Russia, Sept. 24, 2018.
  3. (Oral) K. Ito, M. Mizuguchi, F. Takata, T. Suemasu, H. Yanagihara, K. Takanashi
    " Growth of FeNiN Films toward Formation of L10-ordered FeNi Films by Nitrogen Topotactic Extraction "
    21st International Conference on Magnetism, San Francisco, USA, July 20, 2018.
  4. (Oral) K. Kodama, R. Takabe, K. Toko, and T. Suemasu
    " First operation of BaSi2 p-n homojunction solar cells "
    60th Electric Materials Conference, JJ01, California, USA, June 28 (2018).
  5. (Oral) Y. Yamashita, T. Sato, K. Toko, and T. Suemasu
    " Formation of low defect density BaSi2 light absorbers for solar cell applications "
    60th Electric Materials Conference, O10, California, USA, June 27 (2018).
  6. (Oral) T. Imajo, K. Toko, R. Takabe, and T. Suemasu
    " Characterization of crystallinity and electrical properties of SrGe2 thin films on Ge substrates grown by two-step epitaxy "
    60th Electric Materials Conference, F06, California, USA, June 27 (2018).
  7. (Oral) T. Nishida, T. Suemasu, and K. Toko
    " Epitaxial growth of a light absorbing Ge layer on an Al-induced crystallized Ge seed layer "
    60th Electric Materials Conference, F05, California, USA, June 27 (2018).
  8. (Oral) Y. Yamashita, K. Toko, and T. Suemasu
    " Deep level transient spectroscopy characterization of BaSi2 light absorbers "
    7th World Conference on Photovoltaic Energy Conversion, Area 1.1, Hawaii, USA, June 15 (2018).
  9. (Poster) Z. Xu, K. Gotoh, T. Deng, K. Toko, U. Usami and T. Suemasu
    " Photoresponsivity improvement of BaSi2 epitaxial films by capping with hydrogenated amorphous Si layers by radio-frequency H2 plasma "
    7th World Conference on Photovoltaic Energy Conversion, C2-577, Hawaii, USA, June 13 (2018).
  10. (Poster) K. Kodama, R. Takabe, K. Toko, and T. Suemasu " Demonstration of BaSi2 pn homojunction solar cells and improvement of photoresponsivity of BaSi2 absorbers by Ba/Si deposition rate ratio "
    7th World Conference on Photovoltaic Energy Conversion, B8-583, Hawaii, USA, June 13 (2018).
  11. (Poster) T. Deng, T. Sato, Z. Xu, R. Takabe, S. Yachi, Y. Yamashita, K. Toko and T. Suemasu
    " Investigation of p-BaSi2/n-Si heterojunction solar cells on Si(001) and comparison to those on Si(111) "
    7th World Conference on Photovoltaic Energy Conversion, A7-572, Hawaii, USA, June 13 (2018).
  12. (Oral) T. Gushi, L. Vila, J. P. Attane, O. Fruchart, A. Marty, S. Pizzini, F. Takata, A. Anzai and T. Suemasu,
    " Domain wall properties and spin transfer torque in perpendicularly magnetized Mn4N ferrimagnet thin films, "
    Intermag 2018, Singapore, April 15, 2018.
  13. (invited) Takashi Suemasu,
    " Recent achievements towards high-efficiency BaSi2 homojunction solar cells, "
    10th International WorkShop on Crystalline Siliciond for Solar Cells (CSSC-10), 7-2, Sendai, Japan, April 11, 2018.
  14. FY 2017

  15. (poster) D. Takahara, R. Yoshimine, T. Suemasu, and K. Toko,
    " Fabrication of high-carrier mobility polycrystalline SiGe thin film on insulator, "
    2018 Joint Symposium on Energy Materials Science and Technology, P-38, Tsukuba, Japan, March 9, 2018.
  16. (poster) T. Nishida, M. Nakata, T. Suemasu, and K. Toko,
    " Fabrication of large-grained Ge layer on glass by Al-induced layer exchange for solar cell application, "
    2018 Joint Symposium on Energy Materials Science and Technology, P-37, Tsukuba, Japan, March 8, 2018.
  17. (poster) Y. Nakajima, H. Murata, T. Suemasu, and K. Toko,
    " Effects of catalyst metal species in the layer exchange growth of multilayyer graphene, "
    2018 Joint Symposium on Energy Materials Science and Technology, P-36, Tsukuba, Japan, March 9, 2018.
  18. (poster) K. Kusano, A. Yamamoto, T. Suemasu, and K. Toko,
    " Direct synthesis of thermoelectric SiGe thin films on plastic substrates by Al-induced layer exchange, "
    2018 Joint Symposium on Energy Materials Science and Technology, P-35, Tsukuba, Japan, March 8, 2018.
  19. (poster) T. Imajo, R. Yoshimine, K. Moto, T. Suemasu, and K. Toko,
    " Improvement of hole mobility of polycrystalline Ge on glass by controlling interfacial layer in solid-phase crystallization, "
    2018 Joint Symposium on Energy Materials Science and Technology, P-34, Tsukuba, Japan, March 9, 2018.
  20. (poster) Daichi Takahara, Ryota Yoshimine, Takashi Suemasu, and Kaoru Toko,
    " Composition-dependent electrical properties of solid-phase crystallized SiGe thin film on insulator, "
    11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-03, Sendai, Japan, February 24, 2018.
  21. (poster) Ryota Yoshimine, Kenta Moto, Takashi Suemasu, Kaoru Toko,
    " Reduction of carrier scattering factors in solid-phase crystallized Ge on an insulator leading to high hole mobility (450 cm^2/Vs), "
    11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-02, Sendai, Japan, February 24, 2018.
  22. (poster) Kinta Kusano, Atsushi Yamamoto, Takashi Suemasu, Kaoru Toko,
    " Self-organization of thermoelectric Si1-xGex (0?x?1) thin films on insulators using Al-induced layer exchange, "
    11th International WorkShop on New Group IV Semiconductor Nanoelectronics, P-01, Sendai, Japan, February 24, 2018.
  23. (poster) Daichi Takahara, Kaoru Toko, Ryota Yoshimine, Takashi Suemasu,
    " Solid-Phase Crystallization of Density-Controlled Amorphous Si1-xGex Thin Films on Glass, "
    27th International Photovoltaic Science and Engineering Conference, 2ThPo.93, Shiga, Japan, November 16, 2017.
  24. (poster) Toshifumi Imajo, Kaoru Toko, Ryota Takabe and Takashi Suemasu,
    " Growth of SrGe2 thin films on Ge substrates, "
    27th International Photovoltaic Science and Engineering Conference, 2ThPo.83, Shiga, Japan, November 16, 2017.
  25. (Oral) Komomo Kodama, Ryota Takabe, Kaoru Toko, Takashi Suemasu,
    " Effect of Sb-doped n+-BaSi2 surface layer on the carrier transport properties and spectral response, "
    27th International Photovoltaic Science and Engineering Conference, 2WeO4.2, Shiga, Japan, November 15, 2017.
  26. (poster) Yudai Yamashita, Ryota Takabe, Kaoru Toko, and Takashi Suemasu,
    " Dependence of solar cell characteristics on Si substrate pretreatment, "
    27th International Photovoltaic Science and Engineering Conference, 2TuPo.105, Shiga, Japan, November 14, 2017.
  27. (poster) Ryota Takabe, Tianguo Deng, K. Kodama, Y. Yamashita, Koaru Toko, and Takashi Suemasu,
    " Impact of Ba/Si flux ratio during molecular beam epitaxy growth on the characteristics of BaSi2 epitaxial films on Si(111), "
    27th International Photovoltaic Photovoltaic Science and Engineering Conference, 2TuPo.83, Shiga, Japan, November 14, 2017.
  28. (poster) Zhihao Xu, Tianguo Deng, Ryota Takabe Du, Miftahullatif Emha Bayu, Kaoru Toko and Takashi Suemasu,
    " Nitrogen-doped BaSi2 thin film on n-Si (111) by molecular beam epitaxy and radio-frequency plasma generator, "
    27th International Photovoltaic Science and Engineering Conference, 2TuPo.78, Shiga, Japan, November 14, 2017.
  29. (poster) Tianguo Deng, Kazuhiro Gotoh, Ryota Takabe, Zhihao Xu, Suguru Yachi, Yudai Yamashita, Kaoru Toko, Noritaka Usami, Takashi Suemasu,
    " Investigation on boron-doped p-BaSi2/n-Si hetero-junction solar cells on a textured Si(001) substrate, "
    27th International Photovoltaic Science and Engineering Conference, 2TuPo.75, Shiga, Japan, November 14, 2017.
  30. (Poster) H. Murata, K. Toko, T. Suemasu
    " Effect of interlayers on the layer exchange growth of multilayer graphene on an insulator, "
    The 8th International Symposium on Surface Science (ISSS-8) 4PA-39, Tsukuba, October 24, 2017.
  31. (Poster) Suguru Yachi, Ryota Takabe, Kaoru Toko, Takashi Suemasu
    " Achievement of the conversion efficiency of 9.9% in p-BaSi2/n-Si hetero solar cells, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP008, Tsukuba, September 26, 2017.
  32. (Poster) Fumiya Takata, Toshiki Gushi, Akihito Anzai, Kaoru Toko, and Takashi Suemasu
    " Fabrication of L10-MnAl films on lattice matched Mn4N buffer layer, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP009, Tsukuba, September 26, 2017.
  33. (Poster) Toshifumi Imajo, Ryota Takabe, Kaoru Toko, Takashi Suemasu
    " SrGe2 thin films for solar cell applications, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP013, Tsukuba, September 26, 2017.
  34. (Poster) K. Kusano, K. Toko, A. Yamamoto, T. Suemasu
    " Al-induced crystallization of thermoelectric SiGe film on insulator, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP018, Tsukuba, September 26, 2017.
  35. (Poster) Hiromasa Murata, Kaoru Toko, Takashi Suemasu
    " Low-temperature (500℃) synthesis of multilayer graphene on glass through metal-induced layer exchange, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP019, Tsukuba, September 26, 2017.
  36. (Poster) Akihito Anzai, Toshiki Gushi, Fumiya Takata, Kaoru Toko, Takashi Suemasu
    " Epitaxial growth and magnetic properties of MnxFe4-xN films on MgO(001) substrates, "
    Tsukuba Global Science Week Interdisciplinary Workshop on Science and Patents 2017 IWP021, Tsukuba, September 26, 2017.
  37. (invited) T. Suemasu,
    " Semiconducting BaSi2- Si-based new absorber-layer material for solar cells, "
    SSDM2017, M-3-01, Sendai, Japan, September 21, 2017.
  38. (Oral) R. Yoshimine, K. Toko, and T. Suemasu
    " Grain Boundary Engineering of Solid-Phase Crystallized Ge on Glass by Controlling Atomic Density of Precursor, "
    SSDM2017, M-4-03, Sendai, Japan, September 21, 2017.
  39. (Oral) D. Takahara, K. Toko, R. Yoshimine, T. Suemasu
    " Effects of Deposition Temperature of Amorphous Precursors on Solid-Phase Crystallized Si1?xGex Thin Films on an Insulator, "
    SSDM2017, M-4-04, Sendai, Japan, September 21, 2017.
  40. (Poster) K. Moto, K. Toko, R. Yoshimine, T. Suemasu
    " High-hole mobility GeSn on glass formed by solid-phase crystallization using an atomic density controlled precursor, "
    SSDM2017, PS-1-06 (Late News), Sendai, Japan, September 21, 2017.
  41. (Poster) T. Imajo, K. Toko, R. Takabe, T. Suemasu
    " Reactive Deposition Epitaxy of SrGe2 Thin Films on Ge(111) and (001) Substrates, "
    SSDM2017, PS-15-03, Sendai, Japan, September 21, 2017.
  42. FY 2016

  43. (invited) T. Suemasu and N. Usami,
    " Recent progress towards BaSi2 solar cells, "
    Seventh International Symposium on Advanced Science and Technology of Silicon Materials (JSPS Si Symposium), Hawaii, USA, Nov. 21-25, 2016.
  44. (Poster) H. Murata, K. Toko, and T. Suemasu,
    " Ni-induced Layer Exchange Crystallization of Sputtered Amorphous Carbon for Multi-layer Graphene on Insulator, "
    SSDM2016, PS-8-02, Tsukuba, Japan, September 28, 2016.
  45. (Poster) F.Takata, K. Ito, K. Kabara, S. Higashikozono, T. Gushi, K. Toko, M. Tsunoda, and T. Suemasu,
    " Minority spin transport in epitaxially grown nickel-iron nitride films, "
    SSDM2016, PS-12-20, Tsukuba, Japan, September 28, 2016.
  46. (Oral) R. Yoshimine, K. Toko, and T. Suemasu,
    " Low temperature (250oC) crystallization of amorphous Ge thin film on insulator through Ag-induced layer exchange , "
    SSDM2016, D-5-02, Tsukuba, Japan, September 29, 2016.
  47. (Poster) R. Takabe, S. Yachi, K. Toko, and T. Suemasu,
    " Recent progress of B-doped p-BaSi2/n-Si heterojunction solar cells,
    AEARU 6th Energy and Environmental Workshop (2016EEW-07), Yokohama, Japan, August 27, 2016.
  48. (Poster) S. Higashikozono, K. Ito, F. Takata, T. Gushi, K. Toko, and T.Suemasu,
    " Highly oriented epitaxial (α''+α')-Fe16N2 films on α-Fe(001) buffered MgAl2O4(001) substrates and their magnetizations, "
    ICCGE-18, ThP-T05-13, Nagoya, Japan, August 11, 2016.
  49. (Poster) M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, and T. Suemasu,
    " Highly (111)-oriented Ge on insulators formed by Al-induced crystallization leading to vertically aligned Ge nanowires, "
    ICCGE-18, ThP-T02-1, Nagoya, Japan, August 11, 2016.
  50. (Poster) N. Murakoso, H. Yamaguchi, M. Iinuma, T. Suemasu, and Y. Terai,
    " Lattice vibrational properties of BaSi2 epitaxial film in polarized Raman spectra, "
    APAC-Silicide 2016, 17-P32, Fukuoka, Japan, July 17, 2016.
  51. (Poster) Y. Li, Cham Thi Trinh, R. Takabe, K. Toko, N. Usami, and T. Suemasu,
    " Investigation of minority-carrier lifetime and solar cell properties of BaSi2 formed on multicrystallline Si substrates, "
    APAC-Silicide 2016, 17-P20, Fukuoka, Japan, July 17, 2016.
  52. (Poster) R. Yoshimine, K. Toko, and T. Suemasu,
    " Effect of interlayer on Ag-induced layer exchange crystallization of amorphous Ge thin film on insulator, "
    APAC-Silicide 2016, 17-P11, Fukuoka, Japan, July 17, 2016.
  53. (Poster) H. Murata, K. Toko, and T. Suemasu,
    " Multi-layer graphene on insulator formed by Co-induced layer exchange, "
    APAC-Silicide 2016, 17-P10, Fukuoka, Japan, July 17, 2016.
  54. (Poster) S. Yachi, R. Takabe, K. Toko, and T. Suemasu,
    " p-BaSi2/n-Si solar cells with conversion efficiency approaching 10% by reduction of contact resistance and surface passivation using a-Si capping layers, "
    APAC-Silicide 2016, 17-P8, Fukuoka, Japan, July 17, 2016.
  55. (Poster) E. Emha Bayu, H. Urai, D. Tsukahara, K. Toko, and T. Suemasu,
    " Enhancement of hole concentration in B-doped BaSi2 epitaxial thin films by pulse laser annealing, "
    APAC-Silicide 2016, 17-P7, Fukuoka, Japan, July 17, 2016.
  56. (Oral) R. Takabe, S. Yachi, D. Tsukahara, K. Toko, and T. Suemasu,
    " Fabrication of B-doped p-BaSi2 on n-Ge(111) substrates for heterojunction solar cells, "
    APAC-Silicide 2016, 17-PM-V-3, Fukuoka, Japan, July 17, 2016.
  57. (Oral) Cham Thi Trinh, Y. Nakagawa, K. O. Hara, R. Takabe, T. Suemasu, and N. Usami,
    " The growth of polycrystalline orthorhombic BaSi2 on Ge substrate by vacuum evaporation method, "
    APAC-Silicide 2016, 17-PM-V-4, Fukuoka, Japan, July 17, 2016.
  58. (Oral) Y. Nakagawa, Cham Thi Trinh, K. O. Hara, Y. Kurokawa, T. Suemasu, and N. Usami,
    " Proposal of a method to realize BaSi2 thin films with uniform orientation using reactivity of excessive Ba in the film and Si substrate in vacuum evaporation, "
    APAC-Silicide 2016, 17-PM-V-5, Fukuoka, Japan, July 17, 2016.
  59. (Oral) T. Suhara, K. Murata, A. Navabi, K. O. Hara, Y. Nakagawa, Cham Thi Trinh, Y. Kurokawa, T. Suemasu, Kang L. Wang, and N. Usami,
    " Post-annealing effects on BaSi2 Evaporated films grown on Si substrates, "
    APAC-Silicide 2016, 17-PM-V-6, Fukuoka, Japan, July 17, 2016.
  60. (invited) T. Suemasu,
    " Recent progress in BaSi2 thin-film solar cells, "
    23rd Int Workshop on active-matrix flatpanel displays and deices, S3-2, Kyoto, Japan, July 7, 2016.
  61. (Poster) R. Takabe, K. Toko, and T. Suemasu,
    " Photoresponse measurement of highly oriented BaSi2 films on Ge(111) using solid phase epitaxy templates, "
    43rd International Symposium on Compound Semiconductors, MoP-ISCS-002, Toyama, Japan, June 27, 2016.
  62. (Oral) S. Yachi, R. Takabe, D. Tsukahara, H. Takeuchi, K. Toko, and T. Suemasu,
    " p-BaSi2/n-Si heterojunction solar cells with 9.0% efficiency, "
    43rd International Symposium on Compound Semiconductors, TuD2-5, Toyama, Japan, June 28, 2016.
  63. (poster) M. Nakata, K. Toko, and T. Suemasu,
    " Al-Induced Crystallization of Intermediate-Composition SiGe on Insulator, "
    47th International Symposium on Control of Semiconductor Interfaces (ISCSI-VII) and International SiGe Technology and Device Meeting 2016 (ISTDM2016), FE-PB-18, Nagoya, Japan, June 10, 2016.
  64. (poster) Kosuke O. Hara, Cham T. Trinh, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Yasuyoshi Kurokawa, Takashi Suemasu, and Noritaka Usami,
    " Control of the Electrical Properties of BaSi2 Evaporated Films for Solar Cell Applications, "
    43rd Photovoltaic Specialists Conference, A18-748, Portland, USA, June 9, 2016.
  65. (poster) Ryota Takabe, Hiroki Takeuchi, Weijie Du, Keita Ito, Kaoru Toko, Shigenori Ueda, Akio Kimura, and Takashi Suemasu,
    " Band alignments at native oxide/BaSi2 and amorphous-Si/BaSi2 interfaces measured by hard x-ray photoelectron spectroscopy, "
    43rd Photovoltaic Specialists Conference, A45-758, Portland, USA, June 9, 2016.
  66. (invited) T. Suemasu,
    " Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications, "
    MRS Spring Meeting, EP4.1.02, Phoenix, USA, March 29, 2016.
  67. (Oral) K. Ito, Y. Yasutomi, K. Kabara, T. Gushi, S. Higashikozono, K. Toko, M. Tsunoda, and T. Suemasu,
    " Perpendicular magnetic anisotropy of CoxMn4-xN (x = 0 and 0.2) epitaxial films on SrTiO3(001) substrates, "
    13th Joint MMM-Intermag Conference, BF-12, San Diego, USA, Jan. 12, 2016.
  68. FY 2015

  69. (Oral) C. T. Trinh, Y. Nakagawa, K.O. Hara, T. Suemasu, and N. Usami,,
    " Growth of High Quality BaSi2 Film on Ge Substrate by Vacuum Evaporation Method,, "
    25th International Photovoltaic Science and Engineering Conference (PVSEC-25), SiF-O-08, Busan, Nov. 16, 2015.
  70. (poster) Y. Li, M. Baba, Trinh Cham Thi, K. Toko, T. Sekiguchi, N. Usami, and T. Suemasu,
    " Study on surface potential distribution and minotiry-carrier lifetime mapping of BaSi2 formed on multicrystalline Si substrates, "
    25th International Photovoltaic Science and Engineering Conference (PVSEC-25), A-P-26, Busan, Nov. 17, 2015.
  71. (Oral) N. Oya, K. Toko, and T. Suemasu,
    " Sn-doped Al-induced Layer Exchange for Large-grained GeSn Thin Films on Insulators, "
    2015 International Conference on Solid State Devices and Materials (SSDM 2015), G-4-2, Sapporo, Sept. 29, 2015.
  72. (Oral) M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, and T. Suemasu,
    " Fabrication of Vertical Ge Nanowires on Amorphous Substrates by Combining Au-seeded Chemical-Vapor Deposition with Al-induced Crystallization, "
    2015 International Conference on Solid State Devices and Materials (SSDM 2015), D-7-2, Sapporo, Sept. 30, 2015.
  73. (Oral) T. Gushi, K. Ito, S. Honda, Y. Yasutomi, S. Higashikozono, K. Toko, H. Oosato, Y. Sugimoto, K. Asakawa, N. Ota, and T. Suemasu,
    " Observation and control of magnetic domain structure in Fe4N ferromagnetic nanowire, "
    ASCO-NANOMAT 2015, VI.24.03o, Vladivostok, Russia, August 25, 2015.
  74. (invited) T. Suemasu,
    " Present status towards BaSi2 thin-film solar cells, "
    ASCO-NANOMAT 2015,PS.25.01i, Vladivostok, Russia, August 24, 2015.
  75. (invited) T. Suemasu,
    " Exploration the Potential of Semiconducting BaSi2 for Thin-film Solar Cell Applications, "
    Symposium of B: Earth Abundant Materials for Solar Energy Harvesting, ICMAT, Singapore, July 1, 2015.
  76. (poster) M. Baba, K. Watanabe, K. O. Hara, T. Sekiguchi, W. Du, R. Takabe, K. Toko, N. Usami, and T. Suemasu,
    " Cross-sectional electric field distributions in BaSi2 homo and BaSi2/Si hetero pn junctions, "
    42nd IEEE Photovoltaic Specialists Conference, A11-591, New Orleans, USA, June 17, 2015.
  77. (poster) R. Takabe, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Fabrication and Characterization of BaSi2 Films on Ge(111) Substrates by Molecular Beam Epitaxy, "
    42nd IEEE Photovoltaic Specialists Conference, C1-608, New Orleans, USA, June 17, 2015.
  78. (invited) T. Suemasu,
    " Exploration of the possibility of semiconducting BaSi2 nanofilms for solar cell applications, "
    Nanomeeting 2015, I-18, Minsk, Belarus, May 29, 2015.
  79. (invited) T. Suemasu,
    " Recent development towards BaSi2 thin film solar cells, "
    5th Asia-Africa Sustainable Energy Forum, 13a-S9-3, Tsukuba, Japan, May 13, 2015.
  80. (poster) Y. Li, M. Baba, R. Numata, K. Toko, N. Usami, T. Sekiguchi, and T. Suemasu,
    " Surface potential distribution of BaSi2 thin film on multicrystalline Si by Kelvin probe force microscopy, "
    5th Asia-Africa Sustainable Energy Forum,12p-PO-9, Tsukuba, Japan, May 12, 2015.
  81. (poster) M. Baba, K. Watanabe, T. Sekiguchi, N. Saito, N. Yoshizawa, K. O. Hara, N. Usami, and T. Suemasu,
    " Grain boundary analysis of semiconducting BaSi2 for solar cell applications, "
    5th Asia-Africa Sustainable Energy Forum,12p-PO-7, Tsukuba, Japan, May 12, 2015.
  82. (poster) D. Tsukahara, M. Baba, K. Toko, K. Watanabe, T. Sekiguchi, and T. Suemasu,
    " Investigation of a BaSi2 pn junction on Si(111) by Kelvin probe force microscopy, "
    5th Asia-Africa Sustainable Energy Forum,12p-PO-6, Tsukuba, Japan, May 12, 2015.
  83. (poster) W. Du, R. Takabe, M. Baba, K. Toko, N. Usami, and T. Suemasu,
    " Formation of BaSi2 heterojunction solar cells by transparent MoOx hole contacts, "
    5th Asia-Africa Sustainable Energy Forum,12p-PO-5, Tsukuba, Japan, May 12, 2015.
  84. (poster) H. Takeuchi, W. Du, R. Takabe, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Characterization of oxides/BaSi2 interface states using high-low capacitance method,"
    5th Asia-Africa Sustainable Energy Forum,12p-PO-4, Tsukuba, Japan, May 12, 2015.
  85. (poster) R. Takabe, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Crystal growth of BaSi2 continous films on Ge(111) substrate, "
    5th Asia-Africa Sustainable Energy Forum, 12p-PO-3, Tsukuba, Japan, May 12, 2015.
  86. (Oral) Toshiki Gushi, Keita Ito, Syuta Honda, Yoko Yasutomi, Soma Higashikozono, Kaoru Toko, Hirotaka Oosato, Yoshimasa Sugimoto, Kiyoshi Asakawa, Norio Ota, and Takashi Suemasu,
    " Control of domain wall position in L-shaped Fe4N negatively spin polarized ferromagnetic nanowire, "
    IEEE International Magnetics Conference 2015, EC-11, May 14, 2015, Beijing, China.
  87. FY 2014

  88. (invited) T. Suemasu,
    " Possibility of Si-based new materials for thin-film solar cell applications, "
    Tunisia-Japan Symposium (TJS 2014), Tunis, Nov. 30, 2014.
  89. (Poster) W. Du, K. Toko, M. Baba, R. Takabe, N. Usami, and T. Suemasu,
    " Si-based New Material for High Efficiency Thin Film Solar Cell Applications, "
    6th World Conference on Photovoltaic Energy Conversion, 3WePo.5.22, Kyoto, Nov. 26, 2014 .
  90. (Poster) Y. Nakagawa, K. O. Hara, T. Suemaus, and N. Usami,
    " Fabrication of Single-phase BaSi2 Thin Films on Silicon Substrates by Vacuum Evaporation for Solar Cell Applications, "
    6th World Conference on Photovoltaic Energy Conversion, 3WePo.5.21, Kyoto, Nov. 26, 2014 .
  91. (Poster) H. Takeuchi, W. Du, M. Baba, R. Takabe, K. Toko, and T. Suemasu,
    " Defect Levels in N-BaSi2 Epitaxial Films Measured on Metal/n-BaSi2 Schottky-junction and n-BaSi2/p-Si Heterojunction Diodes by Deep Level Transient Spectroscopy, "
    6th World Conference on Photovoltaic Energy Conversion, 3WePo.5.20, Kyoto, Nov. 26, 2014 .
  92. (Poster) K. Nakazawa, K. Toko, and T. Suemasu,
    " Growth and Photoresponse Properties of Polycrystalline Ge Films Formed on Al-induced Crystallization Seed Layer, "
    6th World Conference on Photovoltaic Energy Conversion, 3TuPo.6.22, Kyoto, Nov. 25, 2014 .
  93. (Poster) R. Takabe, M. Baba, W. Du, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Epitaxial Growth of BaSi2 Films on Ge(111) Substrates by Molecular Beam Epitaxy, "
    6th World Conference on Photovoltaic Energy Conversion, 3TuPo.6.18, Kyoto, Nov. 25, 2014 .
  94. (Poster) R. Takabe, K. O. Hara, M. Baba, W. Du, K. Toko, N. Usami, and T. Suemasu,
    " Effects of Surface Conditions and Grain Boundaries on Minority-carrier Lifetime in Undoped n-BaSi2 on Si(111), "
    6th World Conference on Photovoltaic Energy Conversion, 3TuPo.5.23, Kyoto, Nov. 25, 2014 .
  95. (Poster) N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,
    " Evaluation of Diffusion Coefficients of n-type and p-type Impurities in BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy, "
    6th World Conference on Photovoltaic Energy Conversion, 3TuPo.5.21, Kyoto, Nov. 25, 2014 .
  96. (Poster) D. Tsukahara, M. Baba, K. Toko, K. O. Hara, N. Usami, K. Watanabe, T. Sekiguchi, and T. Suemasu,
    " Evaluation of Surface Potential Distributions Around Grain Boundaries and Minority-carrier Diffusion Lengths in Impurity Doped n- and p- type BaSi2 Epitaxial Films, "
    6th World Conference on Photovoltaic Energy Conversion, 3TuPo.5.20, Kyoto, Nov. 25, 2014 .
  97. (Poster) K. Toko, K. Nakazawa, N. Oya, N. Usami, and T. Suemasu,
    " Large-grained Ge Thin Films on Glass Formed by Al-induced Crystallization for Inexpensive Tandem Solar Cells, "
    6th World Conference on Photovoltaic Energy Conversion, 2TuPo.3.37, Kyoto, Nov. 25, 2014 .
  98. (Oral) K. Ito, T. Sanai, Y. Yasutomi, T. Gushi, K. Toko, H. Yanagihara, M. Tsunoda, E. Kita, and T. Suemasu,
    " Mossbauer study on epitaxial CoxFe4-xN films grown by molecular beam epitaxy, "
    59th Annual Magnetism and Magnetic Materials (MMM) Conference, HF-09, Honolulu, USA, Nov. 7, 2014.
  99. (invited) K. Ito and T. Suemasu,
    " Magnetic properties of anti-perovskite type transition metal ferromagnetic nitrides, "
    226th Meeting of The Electrochemical Society, 910, Cancun, Mexico, Oct. 7, 2014.
  100. (Oral) N. Oya, K. Toko, and T. Suemasu,
    " Metal-Induced Crystallization of Amorphous Ge on Insulators: Comparative Study of Catalytic Effects between Al and Sn, "
    2014 International Conference on Solid State Devices and Materials (SSDM 2014), C-4-3, Tsukuba, Sept. 10, 2014 .
  101. (Poster) Yoji Imai, Mitsugu Sohma, and Takashi Suemasu,
    " Energetic evaluation of the possibility of interstitial compound formation of BaSi2 with 2p-, 3s-, and 3d- elements by first-principle calculations, "
    ICSS Silicide 2014, 20-P25, Tokyo, July 20, 2014 .
  102. (Poster) T. Suemasu,
    " Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications, "
    ICSS Silicide 2014, 20-P24, Tokyo, July 20, 2014 .
  103. (Poster) N. A. A. Latiff, T. Yoneyama, M. Mesuda, H. Kuramochi, K. Toko, and T. Suemasu,
    " Fabrication and evaluation of B-doped p-BaSi2 films by RF sputtering on glass substrate, "
    ICSS Silicide 2014, 20-P8, Tokyo, July 20, 2014 .
  104. (Poster) N. Oya, K. Toko, N. Usami, and T. Suemasu,
    " Effect of substrate thickness on Al-induced-crystallized Ge thin films on flexible polyimide substrates, "
    ICSS Silicide 2014, 19-P29, Tokyo, July 19, 2014 .
  105. (Poster) Koki Nakazawa, Kaoru Toko, and Takashi Suemasu,
    " Removal of Ge islands in Al-induced crystallized Ge thin films on glass substrates by selective etching technique, "
    ICSS Silicide 2014, 19-P28, Tokyo, July 19, 2014 .
  106. (Poster) Masakazu Baba, Kosuke O. Hara, Daichi Tsukahara, Kaoru Toko, Noritaka Usami, and Takashi Suemasu,
    " Crystal growth of undoped and impurity doped BaSi2 films on poly-crystalline Si, "
    ICSS Silicide 2014, 19-P20, Tokyo, July 19, 2014 .
  107. (Poster) Daichi Tsukahara, Masakazu Baba, Ryota Takabe, Kaoru Toko, Kosuke O. Hara, Noritaka Usami, Kentaro Watanabe, Takashi Sekiguchi, and Takashi Suemasu,
    " Investigation of surface potential distributions of impurity-doped n-BaSi2 thin-films by Kelvin probe force microscopy, "
    ICSS Silicide 2014, 19-P19, Tokyo, July 19, 2014 .
  108. (Poster) Ryota Takabe, Kosuke O. Hara, Masakazu Baba, Weijie Du, Naoya Shimada, Kaoru Toko, Noritaka Usami, and Takashi Suemasu,
    " Effect of grain areas on minority-carrier lifetime in undoped n-BaSi2 on Si(111), "
    ICSS Silicide 2014, 19-P18, Tokyo, July 19, 2014 .
  109. (Poster) Hiroki Takeuchi, Weijie Du, Masakazu Baba, Ryota Takabe, Kaoru Toko, and Takashi Suemasu,
    " Characterization of defect levels in BaSi2 epitaxial films on Si(111) by deep level transient spectroscopy, "
    ICSS Silicide 2014, 19-P17, Tokyo, July 19, 2014 .
  110. (Poster) Weijie Du, Masakazu Baba, Ryouta Takabe, Ning Zhang, Kaoru Toko, Noritaka Usami, and Takashi Suemasu,
    " Investigation on the J-V characteristics of BaSi2 Schottky junctions with different metal electrodes, "
    ICSS Silicide 2014, 19-P16, Tokyo, July 19, 2014 .
  111. (Oral) Kosuke O. Hara, Yoshihiko Nakagawa, Takashi Suemasu, and Noritaka Usami,
    " Realization of single-phase BaSi2 films by vacuum evaporation with appropriate optical properties for solar cell applications, "
    ICSS Silicide 2014, 19-PM-I-6, Tokyo, July 19, 2014 .
  112. (invited) Weijie Du, Masakazu Baba, Kaoru Toko, Kosuke O. Hara, Kentaro Watanabe, Takashi Sekiguchi, Noritaka Usami, and Takashi Suemasu,
    " Si-based new material for high-efficiency thin-film solar cells, "
    21st International Workshop on Active-Matrix Flatpanel Displays and Devices -TFT Technologies and FPD Materials- (AM-FPD 14), S3-3, Kyoto, July 3, 2014.
  113. (Oral) K. Nakazawa, K. Toko, N. Usami, and T. Suemasu,
    " Effect of diffusion control layer on reverse Al-induced layer exchange process for high-quality Ge/Al/glass structure, "
    56th Electronic Materials Conference, H10, Santa Barbara, USA, June 25, 2014.
  114. (Oral) R. Takabe, K. O. Hara, M. Baba, W. Du, K. Toko, N. Usami, and T. Suemasu,
    " Correlation between grain size and minority-carrier lifetime in undoped n-BaSi2 epitaxial films, "
    56th Electronic Materials Conference, H4, Santa Barbara, USA, June 25, 2014.
  115. (Poster) W. Du, M. Baba, K. Toko, N. Usami, and T. Suemasu,
    " Electrical and optical characterizations of an n-BaSi2/p-Si heterojunction for solar cell applications, "
    40th IEEE Photovoltaic Specialist Conference, A10-88, Denver, USA, June 10, 2014.
  116. (Poster) M. Baba, K. O. Hara, K. Watanabe, W. Du, D. Tsukahara, K. Toko, K. Jiptner, T. Sekiguchi, N. Usami, and T. Suemasu,
    " Grain boundaries characterization of semiconducting BaSi2 thin films on a polycrystalline Si substrate, "
    40th IEEE Photovoltaic Specialist Conference, A7-87, Denver, USA, June 10, 2014.
  117. (invited) T. Suemasu,
    " Si-based new material BaSi2 for high-efficiency thin-film solar cells , "
    International Symposium on Energy Materials and Nanotechnology (ISEMN 2014), Wuhan, China, April 19, 2014.
  118. FY 2013

  119. (Oral) K. Ito, T. Sanai, Y. Yasutomi, S. Zhu, K. Toko, Y. Takeda, Y. Saitoh, A. Kimura, and T. Suemasu,
    " X-ray magnetic circular dichroism for Co3FeN films grown by molecular beam epitaxy , "
    58th Annual Conference on MMM, AB-10, Denver, USA, Nov. 5, 2013.
  120. (Oral) Y. Yasutomi, K. Ito, T. Sanai, K. Toko, and T. Suemasu,
    " Perpendicular magnetic anisotropy of Mn4N films on SrTiO3(001), "
    58th Annual Conference on MMM, GD-08, Denver, USA, Nov. 8, 2013.
  121. (Poster) W. Du, M. Baba, K. Toko, N. Usami, and T. Suemasu,
    " Fabrication of the BaSi2 p-n junction diode on a p+-BaSi2/p+-Si tunnel junction towards solar cell applications , "
    2013 23rd Photovoltaic Science and Engineering Conference, 2-P-20, Taiwan, Oct. 30, 2013.
  122. (Oral) M. Baba, S. Tsurekawa, K. O. Hara, N. Usami, K. Toko, and T. Suemasu,
    " Investigation about Grain Boundary Character in Semiconducting BaSi2 by Kelvin Probe Force Microscopy, "
    2013 23rd Photovoltaic Science and Engineering Conference, A3-3-o-9, Taiwan, Oct. 30, 2013.
  123. (Oral) N, Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,
    " Diffusion Coefficients of Impurity Atoms in BaSi2 Epitaxial Films Grown by Molecular Beam Epitax, "
    2013 International Conference on Solid State Devices and Materials, N-8-5, Fukuoka, Japan, Sept. 27, 2013.
  124. (Poster) N.A.A. Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko, and T. Suemasu,
    " Direct Formation of Polycrystalline BaSi2 Films on Glass Substrate by RF Sputtering, "
    2013 International Conference on Solid State Devices and Materials, PS-15-17, Fukuoka, Japan, Sept. 26, 2013.
  125. (Poster) R. Takabe, K. Nakamura, M. Baba, W. Du, M. A. Khan, K. Toko, M. Sasase, K. O. Hara, N. Usami, and T. Suemasu,
    " Fabrication and Characterization of BaSi2 Epitaxial Films over 1.5μm on Si(111), "
    2013 International Conference on Solid State Devices and Materials, PS-15-16, Fukuoka, Japan, Sept. 26, 2013.
  126. (Oral) M. Baba, S. Tsurekawa, W. Du, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Potential barrier height at grain boundaries in BaSi2 epitaxial thin films studied by Kelvin probe force microscopy, "
    2013 JSAP-MRS Joint Symposia, Symposium 5, 16p-M2-4, Kyoto, Japan, Sept. 16, 2013.
  127. (Oral) K. O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Suemasu,
    " On the Origin of Drastic Enhancement of Excess-Carrier Lifetime by Annealing BaSi2 Epitaxial Films, "
    2013 JSAP-MRS Joint Symposia, Symposium 5, 18p-M2-11, Kyoto, Japan, Sept. 18, 2013.
  128. (Oral) K. Toko, K. Nakazawa, R. Numata, N. Usami, and T. Suemasu,
    " Large-grained Al-induced crystallized Ge thin films for developing tandem solar cells on glass substrates, "
    2013 JSAP-MRS Joint Symposia, Symposium 5, 18p-M2-12, Kyoto, Japan, Sept. 18, 2013.
  129. (Oral) W. Du, M. Baba, R. Takabe, K. Toko, N. Usami, and T. Suemasu,
    " Tunneling Properties of Heavily Doped BaSi2/Si Hetero-junctions in Different Structures for BaSi2 Solar Cells on Si Surfaces, "
    2013 JSAP-MRS Joint Symposia, Symposium 5, 18p-M2-10, Kyoto, Japan, Sept. 18, 2013.
  130. (Oral) W. Du, K. Nakamura, M. Baba, M. Ajmal Khan, K. Toko, N. Usami, and T. Suemasu,
    " Investigation on the tunneling properties of heavily doped BaSi2 layers grown on low-resistivity Si substrates, "
    2nd Asian School-Conference on Physics and Technology of Nanostructured Materials, XI.26.04o, Vladivostok, Russia, Aug. 26, 2013.
  131. (Oral) M. Baba, S. Tsurekawa, K. Nakamura, W. Du, S. koike, K. Toko, and T. Suemasu,
    " Evaluation of BaSi2 epitaxial films grain boundary character by Kelvin probe force microscopy, "
    2nd Asian School-Conference on Physics and Technology of Nanostructured Materials, IV.26.02o, Vladivostok, Russia, Aug. 26, 2013.
  132. (Oral) R. Numata, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Formation of Si/Al/SiO2 structures for Si-based solar cells by inverted Al-induced layer exchange process, "
    2nd Asian School-Conference on Physics and Technology of Nanostructured Materials, XI.24.01o, Vladivostok, Russia, Aug. 24, 2013.
  133. (Oral) K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Al-induced crystallized Ge thin films on SiO2 as epitaxial template for advanced materials, "
    2nd Asian School-Conference on Physics and Technology of Nanostructured Materials, II.22.05o, Vladivostok, Russia, Aug. 22, 2013.
  134. (invited) T. Suemasu,
    " Present status for Si-based high-efficiency thin-film solar cells using semiconducting silicide BaSi2: formation of a pn junction, "
    2nd Asian School-Conference on Physics and Technology of Nanostructured Materials, PS.22.03i, Vladivostok, Russia, Aug. 22, 2013.
  135. (Poster) K. Nakazawa, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates, "
    APAC Silicide 2013, 28-P18, Tsukuba, Japan, July 28, 2013.
  136. (Poster) N. Shimada, M. Baba, K. Nakamura, K. Toko, and T. Suemasu,
    " Investigation of electrical conductivities and anti-reflection properties of AZO formed by RF sputtering for BaSi2 solar cells, "
    APAC Silicide 2013, 28-P8, Tsukuba, Japan, July 28, 2013.
  137. (Poster) S. Koike, M. Baba, K. Nakamura, K. M. Ajmal, W. Du, K. Toko, and T. Suemasu,
    " Fabrication of n+-BaSi2/p+-Si Tunnel Junction on Si(001) Surface for characterization of photoresponse properties of BaSi2 epitaxial films, "
    APAC Silicide 2013, 28-P7, Tsukuba, Japan, July 28, 2013.
  138. (Poster) W. Du, M. Baba, R. Takarabe, N. Zhang, K. Toko, N. Usami, and T. Suemasu,
    " Investigation on the Surface Morphologies and Tunneling Properties of BaSi2/Si hetero-junction for BaSi2 solar cell applications, "
    APAC Silicide 2013, 28-P6, Tsukuba, Japan, July 28, 2013.
  139. (Poster) N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,,
    " Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi2 epitaxially layers, "
    APAC Silicide 2013, 28-P5, Tsukuba, Japan, July 28, 2013.
  140. (Poster) R. Numata, K. Toko, N. Usami, and T. Suemasu,
    " Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structures, "
    APAC Silicide 2013, 28-P4, Tsukuba, Japan, July 28, 2013.
  141. (Poster) R. Takabe, M. Baba, K. Nakamura, W. Du, M. A. Khan, S. Koike, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Fabrication and characterizations of phosphorous-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy, "
    APAC Silicide 2013, 28-P3, Tsukuba, Japan, July 28, 2013.
  142. (Poster) N. A. A. Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko and T. Suemasu,
    " Formation and characterizations of BaSi2 films on glass substrates by RF sputtering, "
    APAC Silicide 2013, 28-P2, Tsukuba, Japan, July 28, 2013.
  143. (Poster) M. Baba, K. O. Hara, N. Saito, N. Yoshizawa, N. Usami, K. Toko and T. Suemasu,
    " Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates, "
    APAC Silicide 2013, 29-P1, Tsukuba, Japan, July 28, 2013.
  144. (Oral) K. O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Sueamasu,
    " Mechanism of Strain Relaxation in BaSi2 Epitaxial Films on Si(111) Substrates during Post-Growth Annealing and Application for Film Exfoliation, "
    APAC Silicide 2013, 28-AM-IV-2, Tsukuba, Japan, July 28, 2013.
  145. (Oral) K. Toko, K. Nakazawa, R. Numata, N. Usami, T. Suemasu,
    " Al-induced crystallized Si and Ge thin films on insulators as epitaxial seeds for silicide materials, "
    APAC Silicide 2013, 28-AM-III-3, Tsukuba, Japan, July 28, 2013.
  146. (Poster) K. O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Suemasu,
    "quot; Improvement of Excess-Carrier Lifetime in BaSi2 Epitaxial Films by Post-Growth Annealing, "
    39th IEEE Photovoltaic Specialist Conference, I24,Tampla, USA, June. 18, 2013.
  147. (Poster) M. Ajmal Khan, K. O. Hara, W. Du, M. Baba, K. Nakamura, M. Suzuno, K. Toko, N. Usami, T. Suemasu,
    " Enhanced p-type conductivity and band gap narrowing in heavily B-doped p-BaSi2 films grown by molecular beam epitaxy , "
    39th IEEE Photovoltaic Specialist Conference, I35, Tampla, USA, June. 18, 2013.
  148. (Poster) M. Baba, S. Tsurekawa, K. Nakamura, Du Weijie, S. Koike, K. Toko, K. O Hara, N. Usami, and T. Suemasu,
    " Characterization of grain boundary properties in BaSi2 epitaxial films on Si(111) and Si(001) by Kelvin probe force microscopy, "
    39th IEEE Photovoltaic Specialist Conference, I16, Tampla, USA, June. 18, 2013.
  149. (Poster) R. Numata, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Large-Grained Oriented Polycrystalline Si/Al/SiO2 Structures Formed by Al-Induced Layer Exchange Process, "
    The 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), P1-14, Fukuoka, JAPAN, June 3, 2013.
  150. (Poster) K O. Hara, Y. Hoshi, N. Usami, Y. Shiraki, K. Nakamura, K. Toko and T. Suemasu
    " N-type Doping of BaSi2 Epitaxial Films by Phosphorus Ion Imp, "
    The 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI),P1-17, Fukuoka, JAPAN, June 3, 2013.
  151. (Oral) K. Toko, R. Numata, K. Nakazawa, N. Usami, and T. Suemasu
    " Growth Promotion of Al-Induced Crystallized Ge Thin-Films on Insulators by Enhancing Ge-Supply into Al Layers, "
    The 6th International Symposium on Control of Semiconductor Interfaces (ISCSI-VI), B2-2, Fukuoka, JAPAN, June 6, 2013.
  152. (invited) T. Suemasu,
    " Towards high-efficiency thin-film solar cells using Si-based new material, "
    3rd Aisa-Arab Sustainable Energy Form jointly with 5th Int. Workshop on Sahara Solar Breeder, Aomori, May 7, 2013.
  153. (invited) T. Suemasu,
    " Semiconducting BaSi2 pn junction solar cells , "
    Japan-Germany JST International Symposium, Berlin, Germany, Jan.11, 2013.
  154. FY 2012

  155. (invited) W. Du, M. Baba, K. Nakamura, M. A. Khan, K. Toko, N. Usami, and T. Suemasu,
    " Large internal quantum efficiency exceeding 70% in semiconducting BaSi2 for thin-film solar cell applications, "
    22th Photovoltaic Science and Engineering Conference (PVSEC), Hangzhou, China, Nov. 6, 2012.
  156. (Poster) M. Baba, K. Nakamura, W. Du, M. A. Khan, S. Koike, K. Toko, and T. Suemasu,
    " Fabrication of large-grained BaSi2 epitaxially films for high-efficiency thin-film solar cells , "
    22th Photovoltaic Science and Engineering Conference (PVSEC), Hangzhou, China, Nov, 2012.
  157. (Poster) K. Nakamura, K. Toh, M. Baba, M. Ajmal Khan, W. Du, K. Toko, and T. Suemasu,
    " Investigation of lattice and grain-boundary diffutions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy, "
    8th International Nanotechnology Conference, Tsukuba, Japan, May 8, 2012.
  158. (Poster) M. Baba, K. Toh, K. Toko, K. Jiptner, T. Sekiguchi, N. Saito, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates, "
    8th International Nanotechnology Conference, Tsukuba, Japan, May 8, 2012.
  159. (Poster) W. Du, K. Toko, N. Usami, and T. Suemasu,
    " Excellent photoresponse properties of BaSi2 thin films grown by molecular beam epitaxy for photovoltaic application, "
    8th International Nanotechnology Conference, Tsukuba, Japan, May 8, 2012.
  160. (Poster) K. Ito, K. Harada, T. Sanai, K. Okamoto, K. Kabara, H. Takahashi, K. Toko, S. Ueda, Y. Imai, K. Miyamoto, T. Okuda, M. Tsunoda, A. Kimura, and T. Suemasu,
    " Negative spin-polarization in ferromagnetic Fe4N films, "
    8th International Nanotechnology Conference, Tsukuba, Japan, May 8, 2012.
  161. (Oral) K. Toko, M. Kurosawa, N. Fukata, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, T. Suemasu,
    " Temperature dependent Al-induced crystallization of amorphous Ge thin films on glass substrates, "
    2012 International Conference on Solid State Devices and Materials (SSDM 2012), I-2-3, Kyoto, Japan, Sept.25, 2012.
  162. (Oral) M. Ajmal Khan, K O. Hara, K. Nakamura, M. Baba, K. Toh, M. Suzuno, K. Toko, N. Usami, and T. Suemasu,
    " Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells, "
    International Conference of Molecular Beam Epitaxy, WeA-1-2, Nara, Japan, Sept.26, 2012.
  163. (Poster) T. Sanai, K. Ito, K. Toko, and T. Suemasu,
    " Epitaxial growth of CoxFe4-xN (0.4<x<2.9) thin films on SrTiO3(001) grown by molecular beam epitaxy, "
    International Conference of Molecular Beam Epitaxy, MoP-34, Nara, Japan, Sept.24, 2012.
  164. (Poster) K. Nakamura, K. Toh, M. Baba, K. M. Ajmal, W. Du, K. Toko, and T. Suemasu,
    " Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy , "
    International Conference of Molecular Beam Epitaxy, ThP-36, Nara, Japan, Sept.27, 2012.
  165. (Oral) S. Koike, K. Toh, M. Baba, K. Toko, K. Hara, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu,
    " Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy, "
    International Conference of Molecular Beam Epitaxy, WeA-1-1, Nara, Japan, Sept.26, 2012.
  166. (Poster) H. Mushu, M. Suzuno, K. Toko, and T. Suemasu,
    " Growth of orthorhombic β-FeSi2 epitaxial layers with preferred in-plane orientation on Si(011) by molecular beam epitaxy, "
    International Conference of Molecular Beam Epitaxy, Th-P-6, Nara, Japan, Sept.27, 2012.
  167. (Poster) M. Baba, K. Toh, K. Toko, Kosuke O. Hara, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu,
    " Formation of large-grain-sized BaSi2 epitaxial layers on Si(111) grown by molecular beam epitaxy , "
    International Conference of Molecular Beam Epitaxy, ThP-31, Nara, Japan, Sept.27, 2012.
  168. (Oral) Y. Funase, M. Suzuno, K. Toko, and T. Suemasu,
    " Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy, "
    International Conference of Molecular Beam Epitaxy, FrA-1-5, Nara, Japan, Sept.28, 2012.
  169. (Oral) Weijie Du, Kaoru Toko, Noritaka Usami and T. Suemasu,
    " Improved Photoresponsivity of BaSi2 Epitaxial Films Grown on a Tunnel Junction for Photovoltaic Applications, "
    International Union of Materials Research Societies-International Conference on Electronic Materials 2012, B-9, Yokohama, Japan, Sept.23-28, 2012.
  170. (Poster) Weijie Du, M. Suzuno, Muhammad Ajmal Khan, K. Toh, M. Baba, K. Nakamura,K. Toko, N. Usami, and T.Suemasu,
    " Improved internal quantum efficiency in high-quality BaSi2 films grown by molecular beam epitaxy , "
    38th IEEE Photovoltaic Specialists Conference, Austin, USA, June 5, 2012.
  171. (Oral) M. Baba, K. Toh, K. Toko, K. Jiptner, T. Sekiguchi, N. Saito, N. Yoshizawa, N. Usami, and T.Suemasu
    " Large minority-carrier diffusion length in n-type BaSi2 epitaxial films on Si(111) by electron-beam-induced current technique, "
    Electronic Materials Conference, Pennsylvania State University, USA, June 21, 2012.
  172. (Oral) K. Ito, K. Harada, K. Okamoto, T. Sanai, K. Toko, S. Ueda, Y. Imai, K. Miyamoto, T. Okuda, A. Kimura, T. Suemasu,
    " Negative spin polarization of Fe4N observed by spin resolved photoemission spectroscopy, "
    2012 19th International Conference on Magnetism, Busan, Korea, July 13, 2012.
  173. FY 2011

  174. (Oral) K. O. Hara, N. Usami, K. Toh, K. Toko, and T. Suemasu,
    " Realization of large-domain Barium disilicide epitaxial thin film by introduction of miscut to Silicon(111) substrate, "
    2011 International Photovoltaic Science and Engineering Conference (PVSEC), 4A-2O-12, Fukuoka, Japan, Dec. 1, 2011.
  175. (Oral) K. Jiptner, H. Kawakami, J. Chen, T. Suemasu and T. Sekiguchi,
    " Characterization of epitaxial β-FeSi2 thin films on Si substrate by SEM, EBIC and EBSD imaging, "
    21st International Photovoltaic Science and Engineering Conference (PVSEC), 5C-5O-06, Fukuoka, Japan, Dec. 2, 2011
  176. W. Du, T. Saito, M. Ajmal Khan, K. Nakamura, M. Baba, K. Toh, K. Toko, N. Usami, and T. Suemasu,
    " Improved photoresponsivity of undoped BaSi2 layers grown on tunnel junction with reduced Sb diffusion, "
    2011 International Photovoltaic Science and Engineering Conference (PVSEC), 3D-2p-11, Fukuoka, Japan, Nov.30, 2011.
  177. M. Ajmal Khan, T. Saito, K. Nakamura, M. Baba, K. Toh, W. Du, K. Toko, N. Usami, and T. Suemasu,
    " Electrical characterization of Cu, Ag doped BaSi2 layers on Si(111) grown by molecular beam epitaxy for thin film solar cells "
    2011 International Photovoltaic Science and Engineering Conference (PVSEC), 4D-2p-15, Fukuoka, Japan, Dec.1, 2011.
  178. A. Okada, K. Toko, K. Hara, N. Usami, and T. Suemasu,
    " Impact of diffusion barrier layer thickness on preferential orientation of Al-induced crystallized Si layers for BaSi2 solar cell, "
    2011 International Photovoltaic Science and Engineering Conference (PVSEC), 4D-2p-12, Fukuoka, Japan, Dec. 1, 2011.
  179. (Oral) W. Du, T. Saito, M. Ajmal Khan, K. Nakamura, M. Baba, K. Toh, K. Toko, N. Usami, and T. Suemasu,
    " Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers, "
    2011 International Conferenfce on Solid State Devices and Materials, L-3-3, Nagoya, September, 2011.
  180. (Oral) A. Okada, K. Toko, K. Hara, N. Usami, and T. Suemasu,
    " Orientation control of Al-induced crystallized silicon by diffusion barrier layers, "
    2011 International Conferenfce on Solid State Devices and Materials, M-8-4, Nagoya, September, 2011.
  181. (invited) T. Suemasu, M. Ajmal Khan, T. Saito, K. Toh, A. Okada, M. Baba, K. Nakamura, Du Weijie and T. Sekiguchi, and N. Usami,
    " Operation principles of solar cells - solar radiation, material requirements, photocurrent, photoresponse, and device configuration using semiconducting silicide BaSi2, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, August 21-27, Vladivostok, Russia.
  182. (invited) T. Suemasu, M. Suzuno, T. Koizumi,
    " 1.6μm electroluminescence of 0.4 mW at room temperature from Si-based double heterostructure light-emitting diodes using iron disilicide, "
    Symposium on Si-based optoelectronic materials and devices, May 24-27, Xiamen, China.
  183. (Oral) M. Ajmal Khan, T. Saito1, K. Toh, M. Baba, K. Nakamura, Du Weijie, and T, Suemasu,
    " Optimization and control of electron and hole concentrations in Cu- and Ag-doped BaSi2 grown by molecular beam epitaxy for the formation of efficient solar cells, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, X.25.01o, August 25, Vladivostok, Russia.
  184. H. Kawakami, M. Suzuno, K. Akutsu, T. Yaguchi, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu,
    " Enhancement of photoresponsivity, monority-carrier diffusion length and lifetime in β-FeSi2 films grown by atomic hydrogen-assisted molecular beam epitaxy, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, PO.II.25.18, August 25, Vladivostok, Russia.
  185. (Oral) K. S. Makeba, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,
    " Correlation between resonant tunneling voltages and Fe3Si quantum well wideth in ferromagnetic CaF2/Fe3Si/CaF2 resonant tunneling diode, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, III.26.04o, August 26, Vladivostok, Russia.
  186. (Oral) M. Suzuno, K. Akutsu, H. Kawakami, T. Yaguchi, K. Akiyama, and T. Suemasu,
    " MicroChannel epitaxy of β-FeSi2 on Si(001) Substrate, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, III.26.01o, Augusut 26, Vladivostok, Russia.
  187. (Oral) K. Ito, G. H. Lee, K. Harada, M. Ye, Y. Takeda, Y. Saito, T. Suemasu, A. Kimura, and H. Akinaga,
    " XMCD measurements for γ'-Fe4N thin films grown by MBE, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, VII.27.03o, August 27, Vladivostok, Russia.
  188. (Oral) K. Harada, K. S. Makabe, H. Akinaga, and T. Suemasu,
    " Realization of an anti-parallel state of magnetization orientation for measuring TMR effects in Fe/Fe3Si/CaF2/Fe3 MTJ structure, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, V.27.06o, August 27, Vladivostok, Russia.
  189. (Oral) A. Okada, N. Usami, and T. Suemasu,
    " Formation and orientation control of Al-induced crystallized Si thin films on conducting layers, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, II.22.09o, August 22, Vladivostok, Russia.
  190. (Oral) D. Weijie, T. Saito, M. Ajmal Khan, K. Nakamura, M. Baba, K. Toh, N. Usami, and T. Suemasu,
    " High quality undoped BaSi2 grown on n+-BaSi2/p+-Si tunnel junction with reduced Sb diffusion, "
    Asian School-Conference on Physics and Technology of Nanostructured Materials, III.26.02o, August 26, Vladivostok, Russia.
  191. (Oral) K. Ito, G. H. Lee, K. Harada, M. Ye, Y. Takeda, Y. Saito, T. Suemasu, A. Kimura, and H. Akinaga,
    " XMCD measurement of molecular beam epitaxy γ'-Fe4N thin films on LaAlO3(100) and MgO(100) substrates , "
    Electron Materials Conference, June 23, 2011, Santa Barabara, USA.
  192. (Oral) Keita Ito, Geun Hyoung Lee, Kazunori Harada, Mitsushi Suzuno, Mao Ye, Takashi Suemasu, Akio Kimura, and Hiro Akinaga,
    " XMCD measurement of γ'-Fe4N thin films on LAO(001) and MgO(001) substrates by molecular beam epitaxy, "
    IEEE International Magnetics Conference 2011, April 26, 2011, Taipei, Taiwan.
  193. (Oral) Muhammad Ajmal Khan, T. Saito, M. Takeishi, and T. Suemasu,
    " Cu-doped BaSi2 films on Si (111) substrate by molecular beam epitaxy and evaluation & qualification of depth profiles of Cu atoms for the formation of efficient solar cells, "
    8th International Bhurban Conference on Applied Sciences & Technology, OP-22, Jan. 12, 2011, Islamabad, Pakistan.
  194. FY 2010

  195. (invited) H. Akinaga, H. Shima, K. Sadakuni-Makabe, K. Harada, K. Ito, and T. Suemasu,
    " Spintronic materials and the application to Si-based devices, "
    International Conference of AUMS (Asian Union of Magnetics Societies), December 5-8, Jeju, Korea.
  196. (invited) N. Usami, Mina Jung, and T. Suemasu,
    " On the control mechanism of microstructures in polycrystalline Si thin film by Al-induced layer exchange process, "
    Malaysia-Japan Joint Workshop, November 12, Malaysia.
  197. H. Lee, K. Ito, and T. Suemasu,
    " Toward the epitaxial growth of ferromagnetic γ'-Fe4N on Si(001) substrates by molecular beam epitaxy, "
    Presented at the APAC Silicide 2010, July 25, 25-P6, Tsukuba, Japan.
  198. K. Toh, T. Saito, A. Okada, M. Ajmal Khan, N. Usami, and T. Suemasu,
    " Fabrication of BaSi2 films on transparent CaF2(111) substrates by molecular beam epitaxy for optical characterization, "
    Presented at the APAC Silicide 2010, July 25, 25-P26, Tsukuba, Japan.
  199. A. Okada, R. Sasaki, Y. Matsumoto, M. Takeishi, T. Saito, K. Toh, 1N. Usami, and T. Suemasu,
    " Formation of poly-Si layers on AZO/SiO2 substrates and anti-reflection coating with AZO films for BaSi2 solar cells, "
    Presented at the APAC Silicide 2010, July 25, 25-P25, Tsukuba, Japan.
  200. M. Takeishi, Y. Matsumoto, R. Sasaki, T. Saito, and T. Suemasu,
    " Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties, "
    Presented at the APAC Silicide 2010, July 25, 25-P24, Tsukuba, Japan.
  201. H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Suemasu,
    " Molecular beam epitaxy of β-FeSi2 films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC, "
    Presented at the APAC Silicide 2010, July 24, 24-P18, Tsukuba, Japan.
  202. K. Akutsu, M. Suzuno, H. Kawakami, and T. Suemasu,
    " Reduction of carrier concentrations of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy, "
    Presented at the APAC Silicide 2010, July 24, 24-P16, Tsukuba, Japan.
  203. K. Harada, K. Sadakuni-Makabe, and T. Suemasu,
    " Magnetoresistance characteristics of Fe3Si/CaF2/Fe3Si heterostructures grown on Si(111) by molecular beam epitaxy,"
    Ppresented at the APAC Silicide 2010, July 25, 25-P2, Tsukuba, Japan.
  204. M. Ajmal Khan, M. Takeishi, Y. Matsumoto, T. Saito, and T. Suemasu,
    " Al- and Cu-doped BaSi2 films on Si (111) substrate by Molecular Beam Epitaxy and Evaluation of Depth Profiles of Al and Cu atoms, "
    Presented at the APAC Silicide 2010, July 25, 25-P23, Tsukuba, Japan.
  205. (Oral) T. Saito, K. Toh, A. Okada, and T. Suemasu,
    " Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells,"
    Presented at the APAC Silicide 2010, July 26, 26-AM-VI-3, Tsukuba, Japan.
  206. (Oral) M. Suzuno, K. Akutsu, H. Kawakami, K. Akiyama, and T. Suemasu,
    " Metalorganic Chemical Vapor Deposition of β-FeSi2 on β-FeSi2 Seed Crystals formed on Si substrates,"
    Presented at the APAC Silicide 2010, July 26, 26-AM-VI-5, Tsukuba, Japan.
  207. K. Sadakuni-Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,
    " Fabrication of Fe3Si/CaF2 Heterostructures Ferromagnetic Resonant Tunneling Diode by Selected-Area Molecular Beam Epitaxy,"
    Presented at the APAC Silicide 2010, July 25, 25-AM-IV-3, Tsukuba, Japan.
  208. (invited) T. Suemasu, .......
    " Toward Si-based high-efficiency thin-film solar cells using semiconducting BaSi2,"
    2010 Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices, June 30-July 2, Tokyo, Japan, 2010.
  209. (Oral) N. Usami, T. Saito, A. Nomura, T. Shishido, and T. Suemasu,
    " Evaluation of minority carrier lifetime in BaSi2 as a novel material for earth-abundant high efficiency thin film solar cells , "
    Presented at the 35th IEEE Photovoltaic Specialists Conference, June 23, 2010, Hawai, USA.
  210. T. Saito, Y. Matsumoto, T. Suemasu, and N. Usami
    " Photoresponse properties of BaSi2 films grown on n+-BaSi2/p+-Si tunnel juntion for high efficiency thin film solar cells , "
    Presented at the 35th IEEE Photovoltaic Specialists Conference, June 23, 2010, Hawai, USA..
  211. K. Harada, K. M. Sadakuni, M. Suzuno, H. Akinaga, and T. Suemaus,
    " Room temperature magnetoresistance in Fe3Si/CaF2/Fe3Si MTJ epitaxially grown on Si(111), "
    Presented at the International Symposium on Advanced Magnetic Materials and Applications 2010, July 13, PE-11, Sendai, Japan.
  212. K. Ito, G. H. Lee, and T. Suemasu,
    " Epitaxial growth of ferromagnetic Fe4N thin films on SrTiO3(001) substrates by molecular beam epitaxy, "
    Presented at the International Symposium on Advanced Magnetic Materials and Applications 2010, July 16, SA-12, Sendai, Japan.
  213. K. Sadakuni-Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,
    " CaF2/Fe3/CaF2 heterostructures resonant tunneling diodes on Si(111) by selected-area molecular beam epitaxy "
    Presented at the International Symposium on Advanced Magnetic Materials and Applications 2010, July 16, SB-04, Sendai, Japan.
  214. K. Sadakuni-Makebe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,
    " Ferromagnetic Resonant Tunneling Diode with a CaF2/Fe3/CaF2 Quantum Well by Local-Area Molecular Beam Epitaxy "
    Presented at the 6th International Conference on the Physics and Applications of Spin Related Phenomena in Semiconductors 2010, August 3, P2-49, Tokyo, Japan.
  215. M. Suzuno, K. Akutsu, H. Kawakami, and T. Suemasu,
    " Reduction of residual carrier concentrations in undoped β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy, "
    Presented at the International Conference on Nanophotonics 2010, June 1, P-B82, Tsukuba, Japan.
  216. (Oral) T. Saito, Y. Matsumoto, M. Takeishi, R. Sasaki, and T. Suemasu,
    " Photoresponse properties of semiconducting BaSi2 epitaxial films grown on the tunnel juntion for photovoltaic applications, "
    Presented at the International Conference on Nanophotonics 2010, June 3, O-58, Tsukuba, Japan.
  217. FY 2009

  218. (Oral) N. Usami, D. Tsukada, Y. Matsumoto, A. Nomura, T. Shishido, and T. Suemasu,
    " Impact of growth temperature on microstructures in polycrystalline Si thin film grown by Al-induced layer exchange process, "
    19th international photovoltaic scientific engineering conference and exhibition, NMD6-05, Jeju, Korea, Nov.12, 2009.
  219. (Oral) M. Suzuno, T. Koizumi, H. Kawakami and T. Suemasu,
    " Enhanced Room-Temperature 1.6μm Electroluminescence from Si-Based Double Heterostructures Light-Emitting Diodes Using Iron Disilicide, "
    2009 International Conferenfce on Solid State Devices and Materials, I-2-3, Sendai, October 7, 2009.
  220. (Oral) Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito and T. Suemasu,
    " Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells, "
    2009 International Conferenfce on Solid State Devices and Materials, H-8-3, Sendai, October 9, 2009.
  221. K. Ito, A. Narahara, H. Akinaga and T. Suemasu,
    " Molecular beam epitaxy and magnetoresistance in Fe4N/MgO/Fe4N magnetic tunnel junction,"
    The 18th International Conference on Electronic Properties of Two-Dimensional Systems, Mo-eP82, Kobe, July 20, 2009.
  222. K. Sadakuni, T. Harianto, H. Akinaga and T. Suemasu,
    " Fabrication of Fe3Si/CaF2/Fe3Si ferromagnetic resonant tunneling diodes on Si(111) by molecular beam epitaxy,"
    The 18th International Conference on Electronic Properties of Two-Dimensional Systems, Tu-eP30, Kobe, July 21, 2009.
  223. FY 2008

  224. (Oral) M. Suzuno, S. Murase, T. Koizumi, and T. Suemasu,
    " 0.1mW p-Si/β-FeSi2/n-Si double heterostructures light-emitting diodes operating at 1.6μm at room temperature,"
    66th Device Research Conference, VII.B-5, University of California, Santa Barbara, CA, June 25, 2008.
  225. (invited) H. Akinaga, F. Takano, H. Shima and T. Suemasu,
    " Spin and Functional-Oxide Electronics as Beyond CMOS Candidates,"
    Moscow International Symposium on Magnetism, Moscow, 21TM-C-7, June 21, 2008.
  226. (invited) Y. Ichikawa, M. Kobayashi, D. Tsukada, Y. Matsumoto, M. Sasase and T. Suemasu,
    " Epitaxial growth of semiconducting BaSrSi2 on Si(111) and hybrid structures with CoSi2 for photovoltaic application,"
    4th Asian Conference on Crystal Growth and Crystal Techonology (CGCT-4), Sendai, May 24, 2008.
  227. FY 2007

  228. (Oral) T. Suemasu, S. Murase, T. Ootsuka, M. Suzuno, K. Morita,
    " Si-Based Environmentally Friendly Semiconductors for Future Electronic and Photonic Devices,"
    3rd International Conference on EcoElectronics,Nanjing, Oct. 25, 2007.
  229. (Oral) Y. Ichikawa, M. Kobayashi and T. Suemasu,
    " Molecular beam epitaxy of semiconductor(BaSi2)/metal(CoSi2) hybrid structures on Si(111) substrates for photovoltaic application,"
    9th International Conference on Atomically Controlled Surfaces, Interfaces and Nanostructures, 13Ap2-2,Tokyo, Nov.13, 2007.
  230. M. Kaneko, T. Suemasu, Y. Adachi, K.Kinoshita and S. Yoda,
    " Investigation on Single Crystallization Mechanims in InGaAs Bulk Crystal Growth by the Traveling Liquidus-Zone Method,"
    3rd International Symposium on Physical Sciences in Space, MP-36, Nara, Japan, Oct 23, 2007.
  231. (Oral) Shigemitsu Murase, Yuta Ugajin, Mitsushi Suzuno and Takashi Suemasu,
    " Luminescence Characterization and Room-Temperature 1.6μm Electroluminescence in Si/β-FeSi2/Si Double Heterostructures on Si(001) by Molecular Beam Epitaxye,"
    4th International Conference on Group IV Photonics, FB4, Tokyo, Sept 21, 2007.
  232. Mitsushi Suzuno, Yuta Ugajin, Shigemitsu Murase and Takashi Suemasu,
    " Enhanced Hole Mobility in p-type β-FeSi2 Films Grown by Molecular Beam Epitaxy Using High-Purity Fe Source,"
    4th International Conference on Group IV Photonics, WP17, Tokyo, Sept 19, 2007.
  233. (invited) Takashi Suemasu, Shigemitsu Murase, Y. Ugajin and Mitsushi Suzuno,
    " Si-based Infrared Light-Emitters Using Semiconducting Iron Silicide,"
    2007 International Conference on Solid State Devices and Materials, Tsukuba, C-1-1, Sept 19, 2007.
  234. (invited) Takashi Suemasu, Yuta Ugajin, Kosuke Morita, Shigemitsu Murase, Mitsushi Suzuno, Yoshitake Ichikawa, Michitaka Kobayashi,
    " Semiconducting silicide photonic devices,"
    "Active and Passive Optical Components for Communications VII"-in SPIE Optics East 2007, 6775-19, Boston, USA, Sept 12, 2007.
  235. FY 2006

  236. (invited) T. Suemasu, T. Sunohara, Y. Ugajin, K. Kobayashi and S. Murase,
    " Growth and luminescence characterization of Si-based double heterostructures light-emitting diodes with iron disilicide active region,"
    2006 Materials Research Society Fall Meeting, Group IV Semiconductor Nanostructures L1.4, Boston, USA, Nov 27, 2006.
  237. K. Akiyama, T. Kiguchi, T. Suemasu, T. Kimura and H. Funakubo,
    " Crystal growth of β-FeSi2 on (100), (110) and (111) plane of Si and yittria-stabilized zirconia substrates, "
    2006 Materials Research Society Fall Meeting, Group IV Semiconductor Nanostructures, Boston, USA, Nov 27, 2006.
  238. T. Suemasu, K. Morita and M. Kobayashi,
    "Molecular beam epitaxy of band-gap-tunable ternary semiconducting silicide Ba1-xSrxSi2 for photovoltaic application,"
    the Fourteenth International Conference on Molecular Beam Epitaxy (MBE-2006), MoP-41, Tokyo, Sept.4, 2006.
  239. K. Yamaguchi, T. Yui, K. Yamaki, I. Kakeya, K. Kadowaki and T. Suemasu,
    " Epitaxial Growth of Ferromagnetic Fe3N Films on Si (111) substrates by Molecular Beam Epitaxy,"
    the Fourteenth International Conference on Molecular Beam Epitaxy (MBE-2006), TuP-35, Tokyo, Sept.5, 2006.
  240. (Oral) S. Murase, T. Sunohara and T. Suemasu,
    "Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxy,"
    the Fourteenth International Conference on Molecular Beam Epitaxy (MBE-2006), MoB-31, Tokyo, Sept.4, 2006.
  241. T. Wakayama, T. Suemasu, T. Kanazawa and H. Akinaga,
    " Reactive ion etching of β-FeSi2 film in inductively coupled plasma, "
    APAC-SILICIDE 2006 (Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics), Kyoto, F-3, July 31, 2006.
  242. (Oral) K. Morita, M. Kobayashi and T. Suemasu,
    " Effect of Sr addition on the crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2, "
    APAC-SILICIDE 2006 (Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics), Kyoto, C-5, July 30, 2006.
  243. (Oral) Y. Ugajin, T. Sunohara and T. Suemasu,
    " Investigation of current injection in β-FeSi2/Sidouble-heterostructures light-emitting diodes by molecular beam epitaxy,"
    APAC-SILICIDE 2006 (Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics), Kyoto, B-4, July 29, 2006.
  244. (Oral) K. Kobayashi, T. Suemasu, N. Kuwano, D. Hara and H. Akinaga,
    " Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy,"
    APAC-SILICIDE 2006 (Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics), Kyoto, E-2, July 31, 2006.
  245. M. Kobayashi, K. Morita and T. Suemasu,
    "Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy, "
    APAC-SILICIDE 2006 (Asia-Pacific Conference on Semiconducting Silicides Science and Technology Towards Sustainable Optoelectronics), P-33, Kyoto, July 30, 2006.
  246. FY 2005

  247. (Oral) T. Sunohara, K. Kobayashi, M. Takauji and T. Suemasu,
    "Epitaxial growth of light-emitting Si/β-FeSi2/Si double-heterostructures on Si(001) substrates by molecular beam epitaxy,"
    The 4th international conference of Si epitaxy and heterostructures, 23P1-52, Awaji, Japan, May 23, 2005.
  248. K. Kobayashi, T. Sunohara, M. Umada, H. Yanagihara, E. Kita and T. Suemasu,
    "Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy,"
    The 4th international conference of Si epitaxy and heterostructures, 24F-4, Awaji, Japan, May 24, 2005.
  249. K. Morita, Y. Inomata and T. Suemasu,
    "Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy,"
    The 4th international conference of Si epitaxy and heterostructures, 25P2-47, Awaji, Japan, May 25, 2005.
  250. Y. Ugajin, M. Takauji and T. Suemasu,
    "Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes,"
    The 4th international conference of Si epitaxy and heterostructures, 25P2-48, Awaji, Japan, May 25, 2005.
  251. FY 2004

  252. (Oral) T.Suemasu, T.Sunohara, M.Takauji, C.Li and F.Hasegawa,
    "Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2 Active Region by Molecular Beam Epitaxy,"
    1st International Conference on Group IV Photonics, Hong Kong, Sept.29, 2004, WA2.
  253. (invited) M. Takauji, T. Suemasu and F. Hasegawa,
    "Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy,"
    The International Conference on Solid State Devices and Materials (SSDM), Tokyo, Sept.17, 2004, D-9-1.
  254. T. Sunohara, C. Li, Y. Ozawa, T. Suemasu and F. Hasegawa,
    "Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy,"
    The International Conference on Solid State Devices and Materials (SSDM), Tokyo, Sept.17, 2004, D-9-2.
  255. (Oral) K.Yamaguchi, H.Tomioka, T.Yui,T.Suemasu, K.Ando, R.Yoshizaki and F.Hasegwa,
    "Cr concentration dependence of magnetic and electrical properties of Cr-doped GaN films on Si(111) by MOMBE,"
    the Internationla Workshop on Nitride Semiconductors, USA, Pittsburgh, July 19, 2004, B1.3.
  256. (Oral) T.Suemasu, K.Yamaguchi, H.Tomioka, R.Yoshizaki and F.Hasegwa,
    "Ferromagnetic to paramagnetic transition in Cr-doped GaN film on Si(111) by metal organic molecular beam epitaxy,"
    The 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004),Gyeongju, Korea on March 17, 2004, B5-5.
  257. M.Suzuki, T.Sato, T.Suemasu and F.Hasegawa,
    "Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN,"
    The 5th International Symposium on Blue Laser and Light Emitting Diodes (ISBLLED-2004),Gyeongju, Korea on March 17, 2004, A5-5.
  258. FY 2003

  259. (invited) F.Hasegawa and T.Suemasu
    "A first real Si based LED using β-FeSi2 as the active region,"
    Taiwan-Japan Optoelectronics Workshop, Tainan, Taiwan, Nov.20 (2003).
  260. (invited) T.Suemasu and F.Hasegawa
    "Epitaxial growth of semiconducting β-FeSi2 on Si substrates and its application to light-emitting diodes,"
    IUMRS-ICAM2003, Symposium C-7, Yokohama, Oct.13 (2003).
  261. Y.Ozawa, T.Ohtsuka, Cheng Li, T.Suemasu and F.Hasegawa,
    "Growth Condition Dependence of 1.5 μm photoluminescence from β-FeSi2 particles embedded in Si by molecular beam epitaxy,"
    IUMRS-ICAM2003, Symposium C-7, Yokohama, Oct.13 (2003).
  262. Cheng Li, T.Ohtsuka, Y.Ozawa, T.Suemasu and F.Hasegawa,
    "Temperature dependence of electroluminescence of Si-based LEDs with β-FeSi2 particles active region,"
    IUMRS-ICAM2003, Symposium C-7, Yokohama, Oct.13 (2003).
  263. Y.Inomata, T.Nakamura, T.Suemasu and F.Hasegawa,
    "Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy,"
    IUMRS-ICAM2003, Symposium C-7, Yokohama, Oct.13 (2003).
  264. (invited) T.Suemasu and F.Hasegawa
    "Crystal growth of Iron silicide on Si substrates and its application to optical devices,"
    JSPS colloquium, Photonics- The technology for the 21st Century, Royal Institute of Technology, Stockholm, Sweeden, June 2 (2003).
  265. K.Yamaguchi, H.Tomioka, T.Sato, R.Souda, T.Suemasu and F.Hasegawa,
    "Polarity of MBE GaN/AlN/Si(111); dependence on AlN thickness and nitrogen source,"
    5th int.conf. Nitride semiconductors, Th-P3.021 (2003) May 29, Nara, Japan.
  266. M.Suzuki, T.Sato, K.Yamaguchi, C.Miyamoto, T.Suemasu and F.Hasegawal
    "quot;Formation of Ga1-xSixNy/metal Ga/Si layers during HVPE growth of thick GaN on MBE GaN/AlN/Si(111) wafers,"
    5th int.conf. Nitride semiconductors, Mo-A1.8 (2003) May 26, Nara, Japan.
  267. T.Suemasu, K.Yamaguchi, H.Tomioka and F.Hasegawa,
    "Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(111)A substrates,"
    The 5th int.conf. Nitride semiconductors, Th-P3.032 (2003) May 29, Nara, Japan.
  268. N.Seki, K.Takakura, T.Suemasu and F.Hasegawa,
    "Conduction Type and Deep Levels of Undoped β-FeSi2 Films Grown by MBE with Different Si/Fe Ratios,"
    The 1th Int.Symp.on Point Defect and Nonstoichiometry, TO-13 (2003) March 20, Sendai, Japan.
  269. FY 2002

  270. (invited) F.Hasegawa and T.Suemasu
    "Formation of semiconducting β-FeSi2 and its application to Si-based LED,"
    4th Japanese-Spanish-German Workshop on Recent Progress in Advanced Materials, Devices, Processing and Characterization, Cordoba, Spain, March 10 (2002).
  271. K. Takakura, N. Seki, T. Suemasu, and F. Hasegawa,
    "Comparison of donor and acceptor levels in undoped, high quality β-FeSi2 films grown by MBE and multi-layer method,"
    The 8th IUMRS International Conference on Electronic Materials (IUMRS-ICEM2002), D-45 (2002) June, Xian, China.
  272. F.Hasegawa, T.Suemasu, Y.Negishi, T.Ohtsuka, C.Li and K.Takakura,
    "Dependence of Room Temperature 1.6μm EL from a p-Si/β-FeSi2 particles/n-Si LED on the Device Structure and I-V Characteristics,"
    26th Int.Conf.of Physics of Semiconductors, July 29 (2002) D248, Edinburgh, UK.
  273. T.Suemasu, Y.Negishi, T.Ohtsuka, Y.Ozawa, K.Takakura and F.Hasegawa,
    "Optimum size of beta-FeSi2 particles on the 1.5 μm light emission from Si/ beta-FeSi2 particles/Si structures,"
    26th Int.Conf.of Physics of Semiconductors, July 30 (2002) H59, Edinburgh, UK.
  274. FY 2001

  275. O.Takahashi, M.Namerikawa, H.Tanaka, R.Souda, T.Suemasu and F.Hasegawa,
    "Polarity of hexagonal GaN grown on GaAs(111)A and (111)B surfaces by HVPE and MOVPE,"
    Mat. Res.Soc. Symp. Proc. Vol.639 (2001) G11.8.1.
  276. FY 2000

  277. R.Teranishi, J.Oinuma, Y.Mori, K.Takarabe, S.Chichibu, T.Suemasu, Y.Ikura and F.Hasegawa,
    "Optical Propertiy of β-FeSi2 under,"
    9th Int.Conf.High Pressure Semicon. Physics , 2000.
  278. (Oral) K.Takakura, T.Suemasu, Y.Ikura and F.Hasegawa,
    "Growth of High Mobility β-FeSi2 Films and Control of its Conduction Type by Si/Fe Ratios,"
    42nd Electronic Materials Conference, K5, Denver, USA, June 21, 2000.
  279. (Oral) T.Suemasu, Y.Ikura, Y.Negishi, K.Takakura and F.Hasegawa,
    "Growth Temperature Dependence of 1.5 μm Photoluminescence from beta-FeSi2 Balls in Si and Realization of Electroluminescence Nearly at Room Temperature,"
    42nd Electronic Materials Conference, N5, Denver, USA, June 22, 2000.
  280. FY 1999

  281. K.Takakura, T.Suemasu and F.Hasegawa,
    "Growth of Mn Doped Epitaxial β-FeSi2 Films on Si(001) Substrates by Reactive Deposition Epitaxy,"
    Int.Joint Conf.on Silicon Epitaxy and Heterostructures, Zao, Japan, Sept.12-17, 1999.
  282. T.Suemasu, Y.Iikura, K.Takakura, N.Hiroi and F.Hasegawa,
    "Optimum annealing condition for 1.5μm photoluminescence form reactive depositon epitaxy beta-FeSi2 balls embedded in Si crystals,"
    Int.Conf.on Luminescence and Opitcal Spectroscopy of Condensed Matter, Osaka, Japan, Aug.25, 1999.
  283. (Oral) T.Suemasu, M.Sakai and F.Hasegawa,
    "Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: Trisdimethylamino-arsine,"
    7th Int.Conf.on Chemical Beam Epitaxy and Related Growth Techniques, Tsukuba, Japan, July 27-30, 1999.
  284. FY 1998

  285. S.Yonemura, M.Sakai, H.Tsuchiya, T,Suemasu and F.Hasegawa,
    "Estimation of Hexagonal GaN Included in Nominally Cubic GaN by w Scan XRD Method: Comparison with the Pole Figure Method for GaN Layers Grown with Different Growth Methods and Conditions,"
    2nd Int.Symp. on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, Sept.29-Oct.2, 1998.
  286. K.Sunaba, H.Tsuchiya, M.Minami, T.Suemasu and F.Hasegawa,
    "Influence of As Autodoping and Oxygen Contamination on the Growth and Photoluminescence Properties of Halide VPE Grown Thick Cubic GaN,"
    2nd Int.Symp. on Blue Laser and Light Emitting Diodes, Kisarazu, Chiba, Japan, Sept.29-Oct.2, 1998.
  287. F.Hasegawa, Harutoshi Tsuchiya, Kenji Sunaba and T.Suemasu,
    "Growth of High Quality Cubic GaN on (001) GaAs by Halide VPE with Back Side Buffer,"
    Korea 1998.
  288. (Oral) T.Suemasu, K.Takakura, M.Tanaka, T.Fujii and F.Hasegawa,
    "Fabrication of p-Si/β-FeSi2 ball/n-Si Structures by MBE and Their Electrical and Optical Properties,"
    European Materials Research Society Symposium, B-VIII.3, Strasburg, June 16-19, France 1998.
  289. FY 1997

  290. H.Tsuchiya, K.Sunaba, S.Yonemura, T.Suemasu and F.Hasegawa,
    "Surface Preparation and Growth Condition Dependence of Cubic Layer on (001) GaAs by Hydride Vapor Phase Epitaxy,"
    Mat. Res. Symp. Proc. Vol.468 (1997) 63-67.
  291. FY 1996

  292. M.Tanaka, Y.Kumagai, T.Suemasu and F.Hasegawa,
    "Reactive deposition epitaxial growth β-FeSi2 layers on Si(001),"
    Record of Second International Symposimu on the Control of Semiconductor Interfaces, 303, Karuizawa, Oct.28-Nov.1, 1996.

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