Journal Papers

2019 2018 2017 2016 2015 2014 2013 2012 2011 2010 2009 2008 2007 2006 2005 2004 2003 2002 2001 2000 1999 1998 1997 1996-1991

     2019

  1. T. Komori, T. Hirose, T. Gushi, K. Toko, T. Hanashima, J. P. Attane, L. Vila, K. Amemiya, and T. Suemasu,
    " Magnetic reversal in Mn4-xNixN epitaxial films below and above Ni composition needed for magnetic compensation, "
    in preparation.
  2. T. Sato, Y. Yamashita, Z. Xu, K. Toko, S. Gambarelli, M. Imai, and T. Suemasu,
    " Correlation of native defects between epitaxial films and polycrystallline BaSi2 bulks based on photoluminescence spectra, "
    submitted.
  3. T. Ishibe, J. Chikada, T. Terada, S. Yachi, T. Sato, T. Suemasu, and Y. Nakamura,
    " Ultimately low thermal conductivity thermoelectric silicide with disorder-enhanced phonon localization, "
    submitted.
  4. A. Montes, S.W.H. Eijt, Y. Tian, R. Gram, H. Schut, T. Suemasu, N. Usami,O. Isabella, J. Serra, and M. Zeman,
    " Point defects in BaSi2 thin films for photovoltaic applications studied by positiron annihilation spectroscopy, "
    submitted.
  5. K. Ito, Y. Yasutomi, S. Zhu, M. Nurmamat,M. Tahara,Y. Takeda, Y. Saitoh, K. Toko, R. Akiyama, T. Oguchi, A. Kimura, and T. Suemasu,
    " Manipulation of saturation magnetization and perpendicular magnetic anisotropy in epitaxial CoxMn4-xN films, "
    submitted.
  6. T. Gushi, M. J. Klug, J. Pena Garcia, H. Okuno, J. Vogel, J.P. Attane, T. Suemasu, S. Pizzini, and L. Vila,
    " Large current driven domain wall mobility and gate tuning of coercivity in ferrimagnetic Mn4N thin films, "
    submitted.
  7. T. Deng, Z. Xu, Y. Yamashita, T. Sato, K. Toko, and T. Suemasu,
    " Modeling the effects of defect parameters on the performance of a p-BaSi2/n-Si heterojunction solar cell,"
    submitted.
  8. R. Du, K. Yang, W. Shi, W. Du, Y. Zhang, and T. Suemasu,
    " Formation of poly-crystalline BaSi2 thin films by pulsed laser deposition for solar cell applications, "
    submitted.
  9. K. Uemura and T. Suemasu,
    " Stability of cross-shaped electron beam in a vacuum magnetic sensor with a p-Si field emitter tip, "
    Vacuum 168, 108858 (2019).
  10. D. A Shohonov, D. B. Migas, A. B. Filonov, and V. E. Borisenko, K. Takabe, and T. Suemasu,
    " Effects of lattice parameter manipulations on electronic and optical properties of BaSi2, "
    Thin Solid Films 686, 137436 (2019).
  11. [Open access] L. Benincasa, H. Hoshida, T. Deng, T. Sato, Z. Xu, K. Toko, Y. Terai, and T. Suemasu,
    " Investigation of defect levels in BaSi2 epitaxial films by photoluminescence and the effect of atomic hydrogen passivation, "
    Journal of Physics Communications 3, 075005 (2019).
  12. Z. Xu, D. A. Shohonov, A. B. Filonov, K. Gotoh, T. Deng, S. Honda, K. Toko, N. Usami, D. B. Migas, V. E. Borisenko, and T. Suemasu,
    " Marked enhancement of the photoresponsivity and minority-carrier lifetime of BaSi2 passivated with atomic hydrogen, "
    Physical Review Materials 3, 065403 (2019).
  13. K.Ito, M. Hayashida, M. Mizuguchi, T. Suemasu, H. Yanagihara, and K.Takanashi,
    " Fabrication of L10-FeNi films by denitriding FeNiN films, "
    Journal of the Magnetic Society of Japan 43, 79 (2019).
  14. T. Komori, T. Gushi, A. Anzai, L. Vila, J. P. Attane, S. Pizzini, J. Vogel, S. Isogami, K. Toko, and T. Suemasu,
    " Magnetic and magneto-transport properties of Mn4N thin films by Ni substitution and their possibility of magnetic compensation, "
    Journal of Applied Physics 125, 213902 (2019).
  15. K. Moto, K, Yamamoto, T. Imajo, T. Suemasu, H. Nakashima, and K. Toko
    " Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass "
    Applied Physics Letters 114, 212107 (2019).
  16. T. Nishida, M. Nakata, T. Suemasu, and K. Toko,
    " Minority carrier lifetime of Ge film epitaxial grown on a large-grained seed layer on glass "
    Thin Solid Films 681, 98 (2019).
  17. Y. Nakajima, H. Murata, N. Saitoh, N. Yoshizawa, T. Sueamsu, and K. Toko,
    " Low-Temperature (400 °C) Synthesis of Multilayer Graphene by Metal-Assisted Sputtering Deposition "
    ACS Omega 4, 6677 (2019).
  18. T. Nishida, K. Moto, N. Saitoh, N. Yoshizawa, T. Suemasu, and K. Toko
    " High photoresponsivity in a GaAs film synthesized on glass using a pseudo-single-crystal Ge seed layer "
    Applied Physics Letters 114, 142103 (2019).
  19. K. Moto, N. Saitoh, N. Yoshizawa, T. Suemasu, and K. Toko
    " Solid-phase crystallization of densified amorphous GeSn leading to high hole mobility (540 cm2/Vs ) "
    Applied Physics Letters 114, 112110 (2019).
  20. D. Takahara, K. Moto, T. Imajo, T. Suemasu, and K. Toko
    " Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility "
    Applied Physics Letters 114, 082105 (2019).
  21. U. Jin, and T. Suemasu,
    " Study of reversible resistive switching mechanism in bismuth titanate deposited by electron cyclotron resonance sputtering,"
    Japanese Journal of Applied Physics 58, 045502 (2019).
  22. H. Murata, Y. Nakajima, N. Saitoh, N. Yoshizawa, T. Suemasu, and K. Toko
    " High-Electrical-Conductivity Multilayer Graphene Formed by Layer Exchange with Controlled Thickness and Interlayer "
    Scientific Reports 9, 4068 (2019).
  23. X. Chena, S. Higashikozonob, K. Ito, Z. Wanga, L. Jinc, P. Hoa, J. Mayer, R. E. Dunin-Borkowski, T. Suemasu, and X. Zhong ,
    " Nanoscale detection of giant saturation magnetization in α-Fe16N2 by electron energy-loss magnetic chiral dichroism, "
    Ultramicroscopy 203 (2019)37.
  24. T. Sato, C. Lombard, Y. Yamashita, Z. Xu, L. Benincasa, K. Toko, S. Gambarelli, and T. Suemasu,
    " Investigation of native defects in BaSi2 epitaxial films by electron paramagnetic resonance, "
    Applied Physics Express 12, 061005 (2019).
  25. Y. Yamashita, T. Sato, K. Toko, A. Uedono, and T. Suemasu,
    " Simple way of finding Ba to Si deposition rate ratios for high photoresponsivity in BaSi2 films by Raman spectroscopy, "
    Applied Physics Express 12, 055506 (2019).
  26. K. Kodama, Y. Yamashita, K. Toko, and T. Suemasu,
    " Operation of BaSi2 homojunction solar cells on p+-Si(111) substrates and the effect of structure parameters on their performance, "
    Applied Physics Express 12, 041005 (2019).
  27. S. Matsuno, T. Nemoto, M. Mesuda, H. Kuramochi, K. Toko, and T. Suemasu,
    " Impact of deposition pressure and two-step growth technique on the photoresponsibity enhancement of polycrystalline BaSi2 films formed by sputtering, "
    Applied Physics Express 12, 021004 (2019).
  28. T. Imajo, K. Moto, R. Yoshimine, T. Suemasu, and K. Toko
    " High hole mobility ( > 500cm2 V-1 s-1) polycrystalline Ge films on GeO2-coated glass and plastic substrates "
    Applied Physics Express 12, 015508 (2019).
  29. T. Komori, A. Anzai, T. Gushi, K. Toko, and T. Suemasu,
    " Molecular beam epitaxy growth of Mn4-xNixN thin films on MgO(001) substrates and their magnetic properties, "
    Journal of Crystal Growth 507 (2019) 163.
  30.  2018

  31. Y. Nakajima, H. Murata, N. Saitoh, N. Yoshizawa, T. Sueamsu, and K. Toko,
    " Metal Catalysts for Layer Exchange Growth of Multilayer Graphene, "
    ACS Appl. Mater. Interfaces 10 41664 (2018)
  32. K. Kusano, A. Yamamoto, M. Nakata, T. Suemasu, and K. Toko
    " Thermoelectric Inorganic SiGe Film Synthesized on Flexible Plastic Substrate, "
    ACS Appl. Energy Mater. 1, 5280 (2018).
  33. K. Moto, R. Yoshimine, T. Suemasu, and K. Toko,
    " Improving carrier mobility of polycrystalline Ge by Sn doping, "
    Scientific Reports 8, 14832 (2018).
  34. H. Hoshida, T. Suemasu, and Y. Terai,
    " Identification of vibrational modes in BaSi2 epitaxial films by infrared and Raman spectroscopy, "
    Defect and Diffusion Forum 386, 43 (2018).
  35. S. Isogami, A. Anzai, T. Gushi, T. Komori, and T. Suemasu,
    " Temperature independent, wide modulation of anomalous Hall effect by Mn doing in Fe4-xMnxN pseudo-single-crystal films, "
    Japanese Journal of Applied Physics 57, 120305 (2018).
  36. T. Gushi, L. Vila, O. Fruchart, A. Marty, S. Pizzini, J. Vogel, F. Takata, A. Anzai, K. Toko, T. Suemasu, and J.P. Attane,
    " Millimeter-sized magnetic domains in perpendicularly magnetized ferrimagnetic Mn4N thin film grown on SrTiO3, "
    Japanese Journal of Applied Physics 57, 120310 (2018).
  37. K. Ito, T. Suemasu, and H. Nakano,
    " Growth of tr6-CaSi2 thin films on Si(111) substrates, "
    Japanese Journal of Applied Physics 57, 120313 (2018).
  38. A. Anzai, T. Gushi, T. Komori, S. Honda, S. Isogami, and T. Suemasu,
    " Transition from minority to majority spin transport in iron-manganese nitride Fe4-xMnxN films with increasing x, "
    Journal of Applied Physics 124, 123905 (2018).
  39. T. Sato, H. Hoshida, R. Takabe, K. Toko, Y. Terai and T. Suemasu,
    " Detection of local vibrational modes of point defects in undoped BaSi2 light absorber layers by Raman spectroscopy, "
    Journal of Applied Physics 124, 025301 (2018).
  40. R. Takabe, T. Deng, K. Kodama, Y. Yamashita, T. Sato, K. Toko, and T. Suemasu,
    " Impact of Ba to Si deposition rate ratios during molecular beam epitaxy on carrier concentration and spectral response of BaSi2 epitaxial film, "
    Journal of Applied Physics 123, 045703 (2018).
  41. [Open access] Z. Xu, K. Gotoh, T. Deng, T. Sato, R. Takabe, K. Toko, N. Usami, and T. Suemasu,
    " Improving the photoresponse spectra of BaSi2 layers by capping with hydrogenated amorphous Si layers prepared by radio-frequency hydrogen plasma, "
    AIP Advances 8, 055306 (2018).
  42. T. Deng, T. Suemasu, D. A. Shohonov, I. S. Samusevich, A. B. Filonov, D. B. Migas, and V. E. Borisenko,
    " Transport properties of n- and p-type polycrystalline BaSi2, "
    Thin Solid Films 661, 7 (2018).
  43. A. Anzai, F. Takata, T. Gushi, K. Toko, and T. Suemasu,
    " Epitaxial growth and magnetic properties of Fe4-xMnxN thin films grown on MgO(001) substrates by molecular beam epitaxy, "
    Journal of Crystal Growth 489 (2018) 20-23.
  44. F. Takata, T. Gushi, A. Anzai, K. Toko, and T. Suemasu,
    " Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy, "
    Journal of Crystal Growth 486 (2018) 19-23.
  45. F. Takata, K. Ito, Y. Takeda, Y. Saitoh, K. Takanashi, A. Kimura, and T. Suemasu,
    " Preferred site occupation of 3d atoms in NixFe4-xN (x=1 and 3) films revealed by x-ray absorption spectroscopy and magnetic circular dichroism , "
    Physical Review Materials 2, 024407 (2018).
  46. D. Takahara, R. Yoshimine, T. Suemasu, and K. Toko,
    " High-hole mobility Si1-xGex(0.1 ? x ? 1) on an insulator formed by advanced solid-phase crystallization, "
    Journal of Alloys and Compounds 766, 417 (2018).
  47. T. Deng, T. Sato, Z. Xu, R. Takabe, S. Yachi, Y. Yamashita, K. Toko, and T. Suemasu,
    " p-BaSi2/n-Si heterojunction solar cells on Si(001) with conversion efficiency approaching 10%: comparision with Si(111), "
    Applied Physics Express 11, 062301 (2018).
  48. [Open access] S. Matsuno, R. Takabe, S. Yokoyama, K. Toko, M. Mesuda, H. Kuramochi, and T. Suemasu,
    " Significant photoresponsivity enhancement of polycrystalline BaSi2 films formed on heated Si(111) substrates by sputtering, "
    Applied Physics Express 11, 071401 (2018).
  49. R. Yoshimine, K. Moto, T. Suemasu, and K. Toko,
    " Advanced solid-phase crystallization for high-hole mobility (450 cm2V-1s-1) Ge thin film on insulator, "
    Applied Physics Express 11, 031302 (2018).
  50. Y. Yamashita, T. Sato, K. Toko, and T. Suemasu,
    " Investigation of electrically active defects in undoped BaSi2 light absorber layers using deep-level transient spectroscopy, "
    Japanese Journal of Applied Physics 57, 075801(2018)..
  51. [Open access] F. Takata, K. Ito and T. Suemasu,
    " Fabrication of ordered Fe-Ni nitride films with equiatomic Fe/Ni ratio, "
    Japanese Journal of Applied Physics 57, 058004 (2018).
  52. [Open access] K. Kodama, R. Takabe, T. Deng, K. Toko, and T. Suemasu,
    " Spectroscopic evidence of photogenerated carrier separation by built-in electric field in Sb-doped n-BaSi2/B-doped p-BaSi2 homojunction diodes, "
    Japanese Journal of Applied Physics 57, 050310 (2018).
  53. S. Yachi, R. Takabe, T. Deng, K. Toko, and T. Suemasu,
    " Effect of BaSi2 template growth duration on the generation of defects and performance of p-BaSi2/n-Si heterojunction solar cells , "
    Japanese Journal of Applied Physics 57, 042301 (2018).
  54. K. Kodama, R. Takabe, S. Yachi, K. Toko, and T. Suemasu,
    " Decrease in electrical contact resistance of Sb-doped n+-BaSi2 layers and spectral response of an Sb-doped n+-BaSi2/undoped BaSi2 structure for solar cells, "
    Japanese Journal of Applied Physics 57, 031202 (2018).
  55. Y. Yamashita, S. Yachi, R. Takabe, M Emha bayu, K. Toko, and T. Suemasu,
    " Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate, "
    Japanese Journal of Applied Physics 57, 025501 (2018).
  56. T. Imajo, K. Toko, R. Takabe, N. Saito, N. Yoshizawa, and T. Suemasu,
    " Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates, "
    Nanoscale Research Letters 13, 22 (2018).
  57. 2017

  58. K. Toko, R. Yoshimine, K. Moto, and T. Suemasu,
    " High-hole mobility polycrystalline Ge on insulator formed by controlling precursor atomic density for solid-phase crystallization, "
    Scientific Reports 7, 16981 (2017).
  59. T. Deng, K. Gotoh, R. Takabe, Z. Xu, S. Yachi, Y. Yamashita, K. Toko, N. Usami, and T. Suemasu,
    " Boron-doped p-BaSi2/n-Si solar cells formed on textured n-Si(001) with a pyramid structure consisting of {111} facets, "
    Journal of Crystal Growth 475 (2017) 186.
  60. Z. Xu, T. Deng, R. Takabe, K. Toko, and T. Suemasu,
    " Fabrication and characterizations of nitrogen-doped BaSi2 epitaxial films grown by molecular beam epitaxy, "
    Journal of Crystal Growth 471 (2017) 37.
  61. S. Higashikozono, K. Ito, F. Takata, T. Gushi, K. Toko, and T. Suemasu,
    " Highly oriented epitaxial (α'' + α')-Fe16N2 films on α-Fe(001) buffered MgAl2O4(001) substrate and their magnetizations, "
    Journal of Crystal Growth 468 (2017) 691.
  62. M. Ajmal Khan and T. Suemasu,
    " Donor and acceptor levels in impurity-doped semiconducting BaSi2 thin films for solar cells application, "
    Physica Status Solidi A 1700019 (2017).
  63. Joko Suwardy, Junyi Chen, Shiyagu Subramani, Wipakorn Jevasuwan, Kaoru Toko, Takashi Suemasu, and Naoki Fukata,
    " Control of grain size and crystallinity of poly-Si film on quartz by Al-induced crystallization, "
    CrystEngComm 19, 2305 (2017).
  64. H. Murata, N. Saitoh, N. Yoshizawa, T. Sumasu, and K. Toko,
    " High-quality multilayer graphene on an insulator formed by diffusion controlled Ni-induced layer exchange, "
    Applied Physics Letters 111, 243104 (2017). (Highlighted in Nature INDEX.)
  65. H. Murata, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Direct synthesis of multilayer graphene on an insulator by Ni-induced layer exchange growth of amorphous carbon, "
    Applied Physics Letters 110, 033108 (2017).
  66. K. Ito, N. Rougemaille, S. Pizzini, S. Honda, N. Ota, T. Suemasu, and O. Fruchart,
    " Magnetic domain walls in nanostrips of single-crystalline Fe4N thin films with fourfold in-plane magnetic anisotropy, "
    Journal of Applied Physics 121, 243904 (2017)
  67. R. Yoshimine, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Silver-induced layer exchange for polycrystalline germanium on a flexible plastic substrate, "
    Journal of Applied Physics 122, 215305 (2017)
  68. K. Toko, K. Kusano, M. Nakata, and T. Suemasu,
    " Low temperature synthesis of highly oriented p-type Si1-xGex (x: 0-1) on an insulator by Al-induced layer exchange, "
    Journal of Applied Physics 122,155305 (2017)
  69. Fumiya Takata, Kazuki Kabara, Keita Ito, Masakiyo Tsunoda, and Takashi Suemasu,
    " Negative anisotropic magnetoresistance resulting from minority spin transport in NixFe4-xN (x = 1 and 3) epitaxial films, "
    Journal of Applied Physics 121, 023903 (2017).
  70. M. Nakata, Toko, and T. Suemasu,
    " Effects of Al grain size on metal-induced layer exchange growth of amorphous Ge thin film on glass substrate , "
    Thin Solid Films 626, 190 (2017).
  71. W. Du, R. Takabe, S. Yachi, K. Toko, and T. Suemasu,
    " Enhanced spectral response of semiconducting BaSi2 films by oxygen incorporation, "
    Thin Solid Films 629, 17 (2017).
  72. Yoshikazu Terai, Haruki Yamaguchi, Hiroaki Tsukamoto, Naoki Murakoso, Motoki Iinuma, and Takashi Suemasu,
    " Polarized Raman spectra of BaSi2 epitaxial film grown by molecular beam epitaxy , "
    Japanese Journal of Applied Physics 56, 05DD02 (2017).
  73. Takamichi Suhara, Koichi Murata, Aryan Navabi, Kosuke O. Hara, Yoshihiko Nakagawa, Cham Thi Trinh, Yasuyoshi Kurokawa, Takashi Suemasu, Kang L. Wang, and Noritaka Usami,
    " Post-annealing Effects on Undoped BaSi2 Evaporated Films Grown on Si Substrates, "
    Japanese Journal of Applied Physics 56, 05DB05 (2017).
  74. Cham Thi Trinh, Y. Nakagawa, K. O. Hara, Y. Kurokawa, R. Takabe, T. Suemasu, and N. Usami,
    " Growth of BaSi2 film on Ge (100) by vacuum evaporation and its photoresponse properties, "
    Japanese Journal of Applied Physics 56,05DB06 (2017).
  75. S. Yachi, R. Takabe, K. Toko, and T. Suemasu,
    " Effect of p-BaSi2 layer thickness on the solar cell performance of p-BaSi2/n-Si heterojunction solar cells , "
    Japanese Journal of Applied Physics 56, 05DB03 (2017).
  76. M. Emha Bayu, Cham Thi Trinh, R. Takabe, S. Yachi, K. Toko, N. Usami, and T. Suemasu,
    " Minority-carrier lifetime and photoresponse properties of B-doped p-BaSi2, a potential light absorption layer for solar cell, "
    Japanese Journal of Applied Physics 56, 05DB01 (2017).
  77. R. Takabe, S. Yachi, D. Tsukahara, K. Toko, and T. Suemasu,
    " Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells, "
    Japanese Journal of Applied Physics 56, 05DB02 (2017).
  78. H. Murata, K. Toko, and T. Suemasu,
    " Multilayer graphene on insulator formed by Co-induced layer exchange, "
    Japanese Journal of Applied Physics 56, 05DE03 (2017).
  79. R. Yoshimine, K. Toko, and T. Suemasu,
    " Effect of interlayer on silver-induced layer exchange crystallization of amorphous germanium thin film on insulator, "
    Japanese Journal of Applied Physics 56, 05DE04 (2017).
  80. (Review Paper) T. Suemasu and N. Usami,
    " Exploring the Potential of Semiconducting BaSi2 for Thin-Film Solar Cell Applications, "
    Journal of Physics D: Applied Physics 50, 023001 (2017).
  81. 2016

  82. Keita Ito, Soma Higashikozono, Fumiya Takata, Toshiki Gushi, Kaoru Toko, and Takashi Suemasu,
    " Growth and magnetic properties of epitaxial Fe4N films on insulators possessing lattice spacing near Si(001) plane, "
    Journal of Crystal Growth 455 (2016) 66.
  83. S. Honda, D. Yamamoto, T. Ohsawa, T. Gushi, K. Ito, and T. Suemasu,
    " Controlling magnetic domain wall positions with an external magnetic field and a low spin-polarized current in chamfered L-shaped ferromagnetic thin ribbons, "
    Journal of Physics D: Applied Physics 49 (2016) 385002.
  84. 末益 崇,
    " BaSi系薄膜太陽電池に向けた取り組みと今後の展望,材料の科学と工学(解説) 第53巻3号,10-13 2016. "
  85. Cham Thi Trinh, Y. Nakagawa, K. O. Hara, R. Takabe, T. Suemasu, and N. Usami,
    " Photoresponse properties of BaSi2 film grown on Si (100) by vacuum evaporation, "
    Materials Research Express 3, 076204 (2016).
  86. M. Nakata, K. Toko, N. Saitoh, N.Yoshizawa, and T. Suemasu,
    " Orientation control of intermediate-composition SiGe on insulator by low-temperature Al-induced crystallization , "
    Scripta Materialia 122 (2016) 86-88.
  87. T. Gushi, K. Ito, S. Higashikozono, F. Takata, H. Oosato, Y. Sugimoto, K. Toko, S. Honda, and T. Suemasu,
    " Electrical detection of domain wall in Fe4N nanostrip by negative anisotropic magnetoresistance effect, "
    Journal of Applied Physics 120, 113903 (2016).
  88. F. Takata, K. Ito, T. Gushi, S. Higashikozono, K. Toko, and T. Suemasu,
    " Epitaxial growth and magnetic properties of NixFe4-xN (x = 0, 1, 3, and 4) films on SrTiO3(001) substrates, "
    Journal of Applied Physics 120, 083907 (2016).
  89. M. Baba, M. Kohyama, and T. Suemasu,
    " First-principles study of twin grain boundaries in epitaxial BaSi2 on Si(111), "
    Journal of Applied Physics 120, 085311 (2016).
  90. K. O. Hara, Cham Thi Trinh, K. Arimoto, J. Yamanaka, K. Nakagawa, Y. Kurokawa, T. Suemasu, and N. Usami,
    " Effects of deposition rate on the structure and electron density of evaporated BaSi2 films, "
    Journal of Applied Physics 120, 045103 (2016).
  91. R. Takabe, H. Takeuchi, W. Du, K. Ito, K. Toko, S. Ueda, A. Kimura, and T. Suemasu,
    " Evaluation of band offset at amorphous-Si/BaSi2 interfaces by hard x-ray photoelectron spectroscopy, "
    Journal of Applied Physics 119, 165304 (2016).
  92. R. Takabe, W. Du, K. Ito, H. Takeuchi, K. Toko, S. Ueda, A. Kimura, and T. Suemasu,
    " Measurement of valence-band offset at native oxide/BaSi2 interfaces by hard x-ray photoelectron spectroscopy, "
    Journal of Applied Physics 119, 025306 (2016).
  93. S. Yachi, R. Takabe, K. Toko, and T. Suemasu,
    " Effect of amorphous Si capping layer on the carrier transport properties of BaSi2 and resultant conversion efficiency approaching 10% in p-BaSi2/n-Si solar cells, "
    Applied Physics Letters 109, 072103 (2016).
  94. D. Tsukahara, S. Yachi, H. Takeuchi, R. Takabe, W. Du, M. Baba, Y. Li, K. Toko, N. Usami, and T. Suemasu,
    " p-BaSi2/n-Si heterojunction solar cells with conversion efficiency reaching 9.0%, "
    Applied Physics Letters 108, 152101 (2016).
  95. [Open access] R. Takabe, S. Yachi, W. Du, D. Tsukahara, H. Takeuchi, K. Toko, and T. Suemasu,
    " Influence of air exposure duration and a-Si capping layer thickness on the performance of p-BaSi2/n-Si heterojunction solar cells, "
    AIP Advances 6, 085107 (2016).
  96. [Open access] K. Ito, Y. Yasutomi, K. Kabara, T. Gushi, S. Higashikozono, K. Toko, M. Tsunoda, and T. Suemasu,
    " Perpendicular magnetic anisotropy in CoxMn4-xN (x = 0 and 0.2) epitaxial films and possibility of tetragonal Mn4N phase, "
    AIP Advances 6, 056201 (2016).
  97. Yoji Imai, Mitsugu Sohma, and T. Suemasu,
    " Effect of Oxygen Incorporation in the Mg2Si Lattice on its Conductivity Type ―A possible reason of the p-type Conductivity of Postannealed Mg2Si Thin Film ―, "
    Journal of Alloys and Compounds 676 (2016) 91.
  98. Y. Nakagawa, K. O. Hara, T. Suemasu, and N. Usami,
    " On the mechanism of BaSi2 thin film formation on Si substrate by vacuum evaporation , "
    Procedia Engineering 141, 23 (2016).
  99. K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami,
    " Simple vacuum evaporation route to BaSi2 thin films for solar cell applications, "
    Procedia Engineering 141, 27 (2016).
  100. K. Toko, N. Oya, M. Nakata, and T. Suemasu,
    " Sn-inserted Al-induced layer exchange for large-grained GeSn thin films on insulator, "
    Thin Solid Films 616, 316 (2016).
  101. K. O. Hara, W. Du, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Toko, T. Suemasu, and N. Usami,
    " Control of electrical properties of BaSi2 thin films by alkali-metal doping using alkali-metal fluorides, "
    Thin Solid Films 603, 218 (2016).
  102. 2015

  103. Kosuke O. Hara, Junji Yamanaka, Keisuke Arimoto, Kiyokazu Nakagawa, Takashi Suemasu, and Noritaka Usami,
    " Structral and electrical characterization of crack-free BaSi2 thin films fabricated by thermal evaporation, "
    Thin Solid Films 595 (2015) 68.
  104. M. Nakata, K. Toko, W. Jevasuwan, N. Fukata, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Transfer-free synthesis of highly ordered Ge nanowire arrays on glass substrate, "
    Applied Physics Letters 107, 133102 (2015).
  105. K. Toko, M. Nakata, W. Jevasuwan, N. Fukata, and T. Suemasu,
    " Vertically Aligned Ge Nanowires on Flexible Plastic Films Synthesized by (111)-Oriented Ge Seeded Vapor・Liquid・Solid Growth, "
    ACS Applied Materials & Interfaces 7, 18120 (2015).
  106. W. Du, R. Takabe, M. Baba, H. Takeuchi, K. O. Hara, K. Toko, N. Usami, and T. Suemasu,
    " Formation of BaSi2 heterojunction solar cells using transparent MoOx hole transport layers, "
    Applied Physics Letters 106, 122104 (2015).
  107. K. Toko, N. Oya, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " 70oC synthesis of high-Sn content (25%) GeSn on insulator by Sn-induced crystallization of amorphous Ge, "
    Applied Physics Letters 106, 082109 (2015).
  108. K. Ito, T. Sanai, Y. Yasutomi, T. Gushi, K. Toko, H. Yanagihara, M. Tsunoda, E. Kita, and T. Suemasu,
    " Mossbauer study on epitaxial CoxFe4-xN films grown by molecular beam epitaxy, "
    Journal of Applied Physics 117, 17B717 (2015).
  109. K.Ito, K. Toko, Y. Takeda, Y. Saitoh, T. Oguchi, T. Suemasu, and A. Kimura,
    " Local electronic states of Fe4N films revealed by x-ray absorption spectroscopy and x-ray magnetic circular dichroism, "
    Journal of Applied Physics 117, 183906 (2015). (Selected as a paper illustrating the rich and timely presence of Materials Science in JAP.)
  110. K. Toko, M. Nakata, A. Okada, M. Sasase, N. Usami, and T Suemasu,
    " Influence of Substrate on Crystal Orientation of Large-Grained Si Thin Films Formed by Metal-Induced Crystallization, "
    International Journal of Photoenergy 2015, 790242 (2015).
  111. K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Improved surface quality of the metal-induced crystallized Ge seed layer and its influence on subsequent epitaxy, "
    Crystal Growth & Design 15, 1535 (2015).
  112. T. Suemasu,
    " Possibility of Si-based new material for thin-film solar cell applications, "
    Journal of Physics: Conference Series 596, 012005 (2015).
  113. T. Suemasu,
    " Exploration of the possibility of semiconducting BaSi2 nanofilms for solar cell applications, "
    Physics, Chemistry and Applications of Nanostructures:Proceedings of International Conference Nanomeeting - 2015.
  114. T. Gushi, K. Ito, S. Honda, Y. Yasutomi, K. Toko, H. Oosato, Y. Sugimoto, K. Asakawa, N. Ota, and T. Suemasu,
    " Fabrication of L-shaped Fe4N ferromagnetic narrow wires and position control of magnetic domain wall with magnetic field, "
    Japanese Journal of Applied Physics 54, 028003 (2015).
  115. Y. Nakagawa, K. O. Hara, T. Suemasu, and N. Usami,
    " Fabrication of single-phase polycrystalline BaSi2 thin films on silicion substrates by vacuum evaporation for solar cell applications, "
    Japanese Journal of Applied Physics 54, 08KC03 (2015).
  116. D. Tsukahara, M. Baba, K. Watanabe, T. Kimura, K. O. Hara, W. Du, N. Usami, K. Toko, T. Sekiguchi, and T. Suemasu,
    " Cross-sectional potential profiles across a BaSi2 pn junction by Kelvin probe force microscopy, "
    Japanese Journal of Applied Physics 54, 030306 (2015).
  117. Yoji Imai, Mitsugu Sohma, and Takashi Suemasu,
    " Energetic evaluation of the possibility of interstitial compound formation of BaSi2 with 2p-, 3s-, and 3d- elements by first-principle calculations, "
    Japanese Journal of Applied Physics 54, 07JE03 (2015).
  118. K. O. Hara, Y. Nakagawa, T. Suemasu, and N. Usami,
    " Realization of single-phase BaSi2 films by vacuum evaporation with suitalbe optical properties for solar cell applications, "
    Japanese Journal of Applied Physics 54, 07JE02 (2015).
  119. K. Nakazawa, K. Toko, and T. Suemasu,
    " Effect of diffusion control layer on reverse Al-induced layer exchange process for high-quality Ge/Al/glass structure, "
    Journal of Electronic Materials 44, 1377 (2015).
  120. N. Oya, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Effects of flexible substrate thickness on Al-induced crystallization of amorphous Ge thin films, "
    Thin Solid Films 583, 221 (2015).
  121. H. Takeuchi, W. Du, M. Baba, R. Takabe, K. Toko, and T. Suemasu,
    " Characterization of defect levels in undoped n-BaSi2 epitaxial films on Si(111) by deep-level transient spectroscopy, "
    Japanese Journal of Applied Physics 54, 07JE01 (2015).
  122. [Open access] (Review Paper) T. Suemasu,
    " Exploring the possibility of semiconducting BaSi2 for thin-film solar cell applications, "
    Japanese Journal of Applied Physics 54, 07JA01 (2015).
  123. R. Takabe, K. O. Hara, M. Baba, W. Du, N. Shimada, K. Toko, N. Usami, and T. Suemasu,
    " Effect of grain areas on minority-carrier lifetime in undoped n-BaSi2 on Si(111), "
    Japanese Journal of Applied Physics Conf. Proc. 3, 011401 (2015).
  124. K. Nakazawa, K. Toko, and T. Suemasu,
    " Removal of Ge Islands in Al-induced layer-exchanged Ge thin films on glass substrates by selective etching technique, "
    Japanese Journal of Applied Physics Conf. Proc. 3, 011402 (2015).
  125. D. Tsukahara, M. Baba, R. Takabe, K. Toko, and T. Suemasu,
    " Investigation of surface potential distributions of phosphorus-doped n-BaSi thin-films by kelvin probe force microscopy , "
    Japanese Journal of Applied Physics Conf. Proc. 3, 011403 (2015).
  126. 末益 崇,
    "半導体シリサイドの太陽電池応用に向けて,"
    応用物理第84巻, 第3号 (最近の展望) (2015)235-239.
  127. 2014

  128. 末益 崇,
    " シリサイド系半導体の科学と技術 - 資源・環境時代の新しい半導体と関連物質, "
    前田佳均編著, 裳華房, 2014年9月21日, ISBN 9784785329204.
  129. Kosuke O. Hara, Noritaka Usami, Masakazu Baba, Kaoru Toko, and Takashi Suemasu,
    " N-type doping of BaSi2 epitaxial films by arsenic ion implantation through a dose-dependent carrier generation mechanism, "
    Thin Solid Films 567 (2014) 105.
  130. T. Suemasu,
    " Toward Si-based high-efficiency thin-film solar cells using semiconducting BaSi2, "
    Materials Science and Engineering 54, 012009 (2014).
  131. N. Oya, K. Toko, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Direct synthesis of highly textured Ge on flexible polyimide films by metal-induced crystallization, "
    Applied Physics Letters 104, 262107 (2014).
  132. M. Ajmal Khan, K. Nakamura, W. Du, K. Toko, N. Usami, and T. Suemasu,
    " Precipitation control and activation enhancement in boron-doped p+-BaSi2 fiilms grown by molecular beam epitaxy, "
    Applied Physics Letters 104, 252104 (2014).
  133. K. Toko, R. Numata, N. Oya, N. Fukata, N. Usami, and T. Suemasu,
    " Low-temperature (180oC) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization, "
    Applied Physics Letters 104, 022106 (2014). (Selected as a highly cited, rising star paper published in Applied Physics Letters in 2014 and 2015.)
  134. M. Baba, K. O. Hara, D. Tsukahara, K. Toko, N. Usami, T. Sekiguchi, and T. Suemasu,
    " Potential variation around grain boundaries in BaSi2 films grown on multicrystalline silicon evaluated by Kelvin probe force microscopy, "
    Journal of Applied Physics 116, 235301 (2014).
  135. D. Tsukahara,M. Baba, S. Honda, Y. Imai, K. O. Hara, N. Usami, K. Toko, J. H. Werner, and T. Sueamsu,
    " Potential variations around grain boundaries in impurity-doped BaSi2 epitaxial films evaluated by Kelvin probe force microscopy, "
    Journal of Applied Physics 116, 123709 (2014).
  136. Keita Ito, Kazuki Kabara, Tatsunori Sanai, Kaoru Toko, Yoji Imai, Masakiyo Tsunoda, and Takashi Suemasu,
    " Sign of the spin-polarization in cobalt-iron nitrides films determined by the anisotropic magnetoresistance effect, "
    Journal of Applied Physics 116, 053912 (2014).
  137. W. Du, M. Baba, K. Toko, K. O. Hara, K. Watanabe, T. Sekiguchi, N. Usami, and T. Suemasu,
    " Analysis of the electrical properties of Cr/n-BaSi2 Schottky junction and n-BaSi2/p-Si heterojunction diodes for solar cell applications, "
    Journal of Applied Physics 115, 223701 (2014).
  138. R. Takabe, K. O. Hara, M. Baba, W. Du, N. Shimada, K. Toko, N. Usami, and T. Suemasu,
    " Influence of grain size and surface condition on minority-carrier lifetime in undoped n-BaSi2 on Si(111), "
    Journal of Applied Physics 115, 193510 (2014).
  139. K. Toko, R. Numata, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Selective formation of large-grained, (100)- or (111)-oriented Si on glass by Al-induced layer exchange, "
    Journal of Applied Physics 115, 094301 (2014).
  140. K. Ito, T. Sanai, Y. Yasutomi, S. Zhu, K. Toko, Y. Takeda, Y. Saitoh, A. Kimura, and T. Suemasu,
    " X-ray magnetic circular dichroism for CoxFe4-xN (x = 0, 3, 4) films grown by molecular beam epitaxy, "
    Journal of Applied Physics 115, 17C712 (2014).
  141. Y. Yasutomi, K. Ito, T. Sanai, K. Toko, and T. Suemasu,
    " Perpendicular magnetic anisotropy of Mn4N films on MgO(001) and SrTiO3(001) substrates, "
    Journal of Applied Physics 115, 17A935 (2014).
  142. Y. Imai, M. Sohma, and T. Suemasu,
    " Energetic Stability and Magnetic moment of Tri- , Tetra-, and Octa- Ferromagnetic Element nitrides Predicted by First-Principle Calculations, "
    Journal of Alloys and Compounds 611 (2014) 440.
  143. K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, and T. Suemasu,
    " Self-orgnaization of Ge(111)/Al/glass structures through layer exchange in metal-induced crystallization, "
    CrystEngComm 16, 9590 (2014).
  144. K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Orientation control of Ge thin films by underlayer-selected Al-induced crystallization, "
    CrystEngComm 16, 2578 (2014).
  145. Kosuke O. Hara, Yusuke Hoshi, Noritaka Usami, Yasuhiro Shiraki, Kotaro Nakamura, Kaoru Toko, and Takashi Suemasu ,
    " N-Type Doping of BaSi2 Epitaxial Films by Phosphorus Ion Implantation and Thermal Annealing , "
    Thin Solid Films 557, 90 (2014).
  146. M. Baba, K. Watanabe, K. O. Hara, K. Toko, T. Sekiguchi, N. Usami, and Takashi Suemasu,
    " Evaluation of minority carrier diffusion length of undoped n-BaSi2 epitaxial thin films on Si(001) substrates by electron-beam-induced-current technique, "
    Japanese Journal of Applied Physics 53, 078004 (2014).
  147. S. Koike, M. Baba, R. Takabe, N. Zhang, W. Du, K. Toko, and T. Suemasu,
    " Photoresponse properties of undoped BaSi2 epitaxial layers on n+-BaSi2/p+-Si (001) by molecular beam epitaxy , "
    Japanese Journal of Applied Physics 53, 058007 (2014).
  148. K. Nakazawa, K. Toko, N. Usami, and T. Suemasu,
    " Al-induced crystallization of amorphous Ge thin films on conducting layer coated glass substrates, "
    Japanese Journal of Applied Physics 53, 04EH01 (2014).
  149. R. Numata, K. Toko, N. Oya, N. Usami, and T. Suemasu,
    " Structural characterization of polycrystalline Ge thin films on insulators formed by diffusion-enhanced Al-induced layer exchange, "
    Japanese Journal of Applied Physics 53, 04EH03 (2014).
  150. R. Takabe, K. Nakamura, M. Baba, W. Du, M. A. Khan, K. Toko, M. Sasase, K. O. Hara, N. Usami, and T. Suemasu,
    " Fabrication and characterization of BaSi2 epitaxial films over 1 μm in thickness on Si(111), "
    Japanese Journal of Applied Physics 53, 04ER04 (2014).
  151. N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu
    " Diffusion coefficients of impurity atoms in BaSi2 epitaxial films grown by molecular beam epitaxy , "
    Japanese Journal of Applied Physics 53, 04ER02 (2014).
  152. R. Numata, K. Toko, N. Usami, and T. Suemasu,
    " Large-grained (111)-oriented Si/Al/SiO2 structures formed by diffusion-controlled Al-induced layer exchange, "
    Thin Solid Films 557, 147 (2014).
  153. R. Numata, K. Toko, K. Nakazawa, N. Usami, and T. Suemasu,
    " Growth promotion of Al-induced crystallized Ge films on insulators by insertion of a Ge membrane below the Al layer, "
    Thin Solid Films 557, 143 (2014).
  154. 2013

  155. M. Baba, S. Tsurekawa, K. Watanabe, W. Du, K. Toko, K. O. Hara, N. Usami, T. Sekiguchi, and T. Suemasu,
    " Evaluation of potential variations around grain boundaries in BaSi2 epitaxial films by Kelvin probe force microscopy, "
    Applied Physics Letters 103, 142113 (2013).
  156. K. Ito, T. Sanai, S. Zhu, Y. Yasutomi, K. Toko, S. Honda, S. Ueda, Y. Takeda, Y. Saitoh, Y. Imai, A. Kimura, and T. Suemasu,
    " Electronic structures and magnetic moments of Co3FeN thin films grown by molecular beam epitaxy, "
    Applied Physics Letters 103, 232403 (2013).
  157. M. Ajmal Khan, K. O. Hara, W. Du, M. Baba, K. Nakamura, M. Suzuno, K. Toko, N. Usami, and T. Suemasu
    " In-situ heavily p-type doping of over 1020 cm-3 in semiconducting BaSi2 thin films for solar cells applications, "
    Applied Physics Letters 102 (2013) 112107.
  158. Masakazu Baba, Keita Ito, Weijie Du, Tatsunori Sanai, Kazuaki Okamoto, Kaoru Toko, Shigenori Ueda, Yoji Imai, Akio Kimura, and Takashi Suemasu,
    " Hard X-ray photoelectron spectroscopy study on valence band structure of semiconducting BaSi2, "
    Journal of Applied Physics 114, 123702 (2013).
  159. K. Nakamura, M. Baba, K. M. Ajmal, W. Du, M. Sasase, K. O. Hara, N. Usami, K. Toko, and T. Suemasu
    " Lattice and grain-boundary diffusions of boron atoms in BaSi2 epitaxial films on Si(111), "
    Journal of Applied Physics 113, 053511 (2013).
  160. K. O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Suemasu,
    " Determination of bulk minority-carrier lifetime in BaSi2 earth-abundant absorber films by utilizing a drastic enhancement of carrier lifetime by post-growth annealing, "
    Applied Physics Express 6 (2013) 112302 (4 pages).
  161. S. Koike, M. Baba, R. Takabe, N. Zhang, W. Du, K. Toko, and T. Suemasu,
    " Photoresponse properties of undoped BaSi2 epitaxial layers on n+-BaSi2/p+-Si (001) by molecular beam epitaxy , "
    Japanese Journal of Applied Physics 53, 058007 (2014).
  162. K. Nakazawa, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Effect of Ge/Al thickness on Al-induced crystallization of amorphous Ge layers on glass substrates, "
    Physica Status Solidi (c) 10, 1781 (2013).
  163. R. Takabe, M. Baba, K. Nakamura, W. Du, M. A. Khan, S. Koike, K. Toko, K. O. Hara, N. Usami, and T. Suemasu,
    " Fabarication and characterizations of phosphorus-doped n-type BaSi2 epitaxial films grown by molecular beam epitaxy, "
    Physica Status Solid (c) 10,1753 (2013).
  164. N. Zhang, K. Nakamura, M. Baba, K. Toko, and T. Suemasu,
    " Evaluation of diffusion coefficients of n-type impurities in MBE-grown BaSi2 epitaxial layers, "
    Physica Status Solid (c) 10, 1762 (2013).
  165. Nurul Amal Abdul Latiff, T. Yoneyama, T. Shibutami, K. Matsumaru, K. Toko, and T. Suemasu,
    " Fabrication and characterization of polycrystalline BaSi2 by RF sputtering, "
    Physica Status Solid (c) 10, 1759 (2013).
  166. R. Numata, K. Toko, N. Usami, and T. Suemasu,
    " Fabrication of BaSi2 films on (111)-oriented Si layers formed by inverted Al-induced crystallization method on glass structure, "
    Physica Status Solidi (c) 10, 1769 (2013).
  167. W. Du, M. Baba, R. Takabe, N. Zhang, K. Toko, N. Usami, and T. Suemasu,
    " Investigation of the tunneling properties and surface morphologies of BaSi2/Si tunnel junctions for BaSi2 solar cell applications, "
    Physica Status Solid (c) 10, 1765 (2013).
  168. M. Baba, K. O. Hara, K. Toko, N. Saito, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Epitaxial growth of BaSi2 films with large grains using vicinal Si(111) substrates, "
    Physica Status Solidi (c) 10, 1756 (2013).
  169. K. Nakazawa, K. Toko, N. Saitoh, N.Yoshizawa, N. Usami, and T. Suemasu,
    " Large-grained polycrystalline (111) Ge films on insulators by thickness-controlled Al-induced crystallization, "
    ECS journal of solid state science and technology 2 (2013) Q195.
  170. K. Toko, K. Nakazawa, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu,
    " Double-layered Ge thin films on insulators formed by an Al-induced layer-exchange process, "
    Crystal Growth & Design 13 (2013) 3908.
  171. Yoji Imai, M. Sohma, and Takashi Suemasu,
    " Possibility of spin-polarized electric current through Mn-, Fe-, Co-, or Ni-doped BaSi2 predicted by their calculated densities of states, "
    Journal of Magnetism and Magnetic Materials 344 (2013) 25.
  172. K. Toko, N. Fukata, K. Nakazawa, M. Kurosawa, N. Usami, M. Miyao, and T. Suemasu
    " Temperature dependent Al-induced crystallization of amorphous Ge thin films on SiO2 substrates, "
    Journal of Crystal Growth 372 (2013) 189.
  173. R. Numata, K. Toko, N. Saitoh, N. Yoshizawa, N. Usami, and T. Suemasu
    " Orientation control of large-grained Si films on insulators by thickness-modulated Al-induced crystallization, "
    Crystal Growth & Design 13 (2013) 1767.
  174. Kosuke O. Hara, Yusuke Hoshi, Noritaka Usami, Yasuhiro Shiraki, Kotaro Nakamura, Kaoru Toko, and Takashi Suemasu
    " Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation, "quot;
    Thin Solid Films 534 (2013) 470.
  175. Kosuke O. Hara, N. Usami, K. Nakamura, R. Takabe, M. Baba, K. Toko, and T. Sueamasu
    " Mechanism of strain relaxation in BaSi2 epitaxial films on Si(111) substrates during post-growth annealing and application for film exfoliation, "
    Physica Status Solidi (c) 10, 1677 (2013).
  176. T. Yoneyama, A. Okada, M. Suzuno, T. Shibutam, K. Matsumaru, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu
    " Formation of polycrystalline BaSi2 films by radio-frequency magnetron sputtering for thin-film solar cell applications, "
    Thin Solid Films 534 (2013) 116.
  177. K. Nakamura, K. Toh, M. Baba, K. M. Ajmal, W. Du, K. Toko, and T. Suemasu
    " Lattice and grain-boundary diffusions of impurity atoms in BaSi2 epitaxial layers grown by molecular beam epitaxy, "
    Journal of Crystal Growth 378 (2013) 189.
  178. T. Sanai, K. Ito, K. Toko, and T. Suemasu
    " Epitaxial growth of ferromagnetic CoxFe4-xN thin films on SrTiO3(001) and magnetic properties, "
    Journal of Crystal Growth 378 (2013) 342.
  179. S. Koike, K. Toh, M. Baba, K. Toko, K. O. Hara, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu
    " Large photoresponsivity in semiconducting BaSi2 epitaxial films grown on Si(001) substrates by molecular beam epitaxy, "
    Journal of Crystal Growth 378 (2013) 198.
  180. M. A. Khan, K. O. Hara, K. Nakamura, W. Du, M. Baba, K. Toh, M. Suzuno, K. Toko, N. Usami, and T. Suemasu
    " Molecular beam epitaxy of boron doped p-type BaSi2 epitaxial films on Si(111) substrates for thin-film solar cells, "
    Journal of Crystal Growth 378 (2013) 201.
  181. M. Baba, K. Toh, K. Toko, K. O. Hara, N. Usami, N. Saito, N. Yosihzawa, and T. Suemasu
    " Formation of large-grain-sized BaSi2 epitaxial layers grown on Si(111) by molecular beam epitaxy, "
    Journal of Crystal Growth 378 (2013) 193.
  182. Y. Funase, M. Suzuno, K. Toko, and T. Suemasu
    " Effect of atomic-hydrogen irradiation on reduction of residual carrier concentration in β-FeSi2 films grown on Si substrates by atomic-hydrogen-assisted molecular beam epitaxy, "
    Journal of Crystal Growth 378 (2013) 365.
  183. 2012

  184. Kosuke O. Hara, Noritaka Usami, Katsuaki Toh, Masakazu Baba, Kaoru Toko, and Takashi Suemasu,
    " Investigation of the Recombination Mechanism of Excess Carriers in Undoped BaSi2 Films on Silicon, "
    Journal of Applied Physics 112 (2012) 083108.
  185. M. Baba, K. Nakamura, W. Du, M. Ajmal Khan, S. Koike, K. Toko, N. Usami, N. Saito, N. Yoshizawa, and T. Suemasu,
    " Molecular Beam Epitaxy of BaSi2 Films with Grain Size over 4 μm on Si(111), "
    Japanese Journal of Applied Physics 51 (2012) 098003.
  186. K. Toko, M. Kurosawa, N. Saitoh, N. Yoshizawa, N. Usami, M. Miyao, and T. Suemasu,
    " Highly (111)-oriented Ge thin films on insulators formed by Al-induced crystallization, "
    Applied Physics Letters 101 (2012) 072106.
  187. T. Sanai, K. Ito, K. Toko, and T. Suemasu
    " Molecular beam epitaxy of CoxFe4-xN (0.4<x<2.9) thin films on SrTiO3(001) substrates, "
    Journal of Crystal Growth 357 (2012) 53.
  188. N.Usami, M.Jung, and T.Suemasu
    " On the growth mechanism of polycrystalline silicon thin film by Al-induced layer exchange process, "
    Journal of Crystal Growth 362 (2012) 16.
  189. K. Toh, K. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu,
    " Epitaxy of Orthorhombic BaSi2 with Preferential in-Plane Crystal Orientation on Si(001): Effects of Vicinal Substrate and Annealing Temperature, "
    Japanese Journal of Applied Physics 51 (2012) 095501.
  190. K. Ito, H. Takahashi, K. Kabara, T. Sanai, K. Toko, T. Suemasu, and, M. Tsunoda,
    " Negative Anisotropic Magnetoresistance in γ'-Fe4N Epitaxial Films on SrTiO3(001) Grown by Molecular Beam Epitaxy, "
    Japanese Journal of Applied Physics 51 (2012) 068001.
  191. K. Ito, K. Okamoto, K. Harada, T. Sanai, K. Toko, S. Ueda, Y. Imai, T. Okuda, K. Miyamoto, A. Kimura, and T. Suemasu
    " Negative spin polarization at the Fermi level in Fe4N epitaxial films by spin-resolved photoelectron spectroscopy, "
    Journal of Applied Physics 112 (2012) 013911.
  192. 末益 崇
    " 新材料BaSi2を用いたレアアースレス薄膜結晶太陽電池を目指して, "
    「特集:光デバイスの未踏領域」光アライアンス Vol. 23, No. 6,11-14 (2012).
  193. M. Baba, K. Toh, K. Toko, N. Saito, N. Yoshizawa, K. Jiptner, T. Sekiguchi, K.O. Hara, N. Usami, and T. Suemasu,
    " Investigation of grain boundaries in BaSi2 epitaxial films on Si(111) substrates using transmission electron microscopy and electron-beam-induced current technique, "
    Journal of Crystal Growth 348 (2012) 75.
  194. W. Du, M. Suzuno, M. A. Khan, K. Toh, M. Baba, N. Nakamura, K. Toko, N.Usami, and T. Suemasu,
    " Improved photoresponsivity of semiconducting BaSi2 epitaxial films grown on a tunnel junction for thin-film solar cells, "
    Applied Physics Letters 100 (2012) 152114. (Selected for the April 30, 2012 issue of Virtual Journal of Nanoscale Science & Technology.)
  195. M. Ajmal Khan, T. Saito, K. Nakamura, M. Baba, W. Du, K. Toh, K. Toko, and T. Suemasu,
    " Electrical characterization and conduction mechanism of impurity-doped BaSi2 films grown on Si(111) by molecular beam epitaxy, "
    Thin Solid Films 522 (2012) 95.
  196. Kosuke O. Hara, Noritaka Usami, Katsuaki Toh, Taoru Toko, and Takashi Suemasu,
    " Realization of Large-Domain Barium Disilicide Epitaxial Thin Film by Introduction of Miscut to Si(111) Substrate, "
    Japanese Journal of Applied Physics 51 (2012) 10NB06.
  197. K. Toh, K. Hara, N. Usami, N. Saito, N. Yoshizawa, K. Toko, and T. Suemasu,
    " Molecular beam epitaxy of BaSi2 thin films on Si(001) substrates, "
    Journal of Crystal Grwoth 345 (2012) 16.
  198. A. Okada, K. Toko, K.O. Hara, N. Usami, and T. Suemasu,
    " Dependence of crystal orientation in Al-induced crystallized poly-Si layers on SiO2 insertion layer thickness, "
    Journal of Crystal Growth 356 (2012) 65.
  199. Weijie Du, T. Saito, Muhammad Ajmal Khan, K. Toko, N.Usami, and T. Suemasu,
    " Effect of Solid-Phase-Epitaxy Si Layers on Suppression of Sb Diffusion from Sb-Doped n+-BaSi2/p+-Si Tunnel Junction to Undoped BaSi2 Overlayers, "
    Japanese Journal of Applied Physics 51 (2012) 04DP01.
  200. T. Suemasu, K. Morita, M. Kobayashi, and Y. Ichikawa,
    " Local structure around Sr in semiconducting BaSrSi2 studied using extended x-ray absorption fine structures, "
    Physics Procedia 23 (2012) 53.
  201. 2011

  202. M. Jung, A. Okada, T. Saito, T. Suemasu, and N. Usami
    " The effect of the presence of an Al-doped ZnO layer on the preferential crystal orientation of polycrystalline silicon thin films grown by an Al-induced layer exchange method, "
    Journal of Ceramic Processing Research 12, Special 3 (2011) s187-s192.
  203. K. Ito, K. Harada, K. Toko, M. Ye, A. Kimura, Y. Takeda, Y. Saitoh, H. Akinaga, and T. Suemasu
    " X-ray magnetic circular dichroism of ferromagnetic Co4N epitaxial films on SrTiO3(001) substrates grown by molecular beam epitaxy, "
    Applied Physics Letters 99 (2011) 252501.
  204. Kosuke O. Hara, Noritaka Usami, Yusuke Hoshi, Yasuhiro Shiraki, Mitsushi Suzuno, Kaoru Toko, and Takashi Suemasu
    " Structural Study of BF2 Ion Implantation and Post Annealing of BaSi2 Epitaxial Films, "
    Japanese Journal of Applied Physics 50 (2011) 121202.
  205. K. Ito, K. Harada, K. Toko, H. Akinaga, and T. Suemasu
    " Epitaxial growth and magnetic characterization of ferromagnetic Co4N thin films on SrTiO3(001) substrates by molecular beam epitaxy, "
    Journal of Crystal Growth 336 (2011) 40.
  206. K.S.Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu
    " Dependence of Resonant Voltage on Quantum-Well Width in CaF2/Fe3Si/CaF2 Resonant Tunneling Diodes, "
    Japanese Journal of Applied Physics 50 (2011) 108002.
  207. M. Ajmal Khan, T. Saito, M. Takeishi, and T. Suemasu,
    " Molecular Beam Epitaxy of Cu-Doped BaSi2 Films on Si(111) Substrate and Evaluation & Qualification of Depth Profiles of Cu Atoms for the Formation of Efficient Solar Cells, "
    Advanced Materials Research (Advanced Materials for Applied Science and Technology ) 326 (2011) 139.
  208. K.Ito, G. H. Lee, M. Suzuno, H. Akinaga, and T. Suemasu,
    " Molecular beam epitaxy of ferromagnetic γ'-Fe4N films on LaAlO3(001), SrTiO3(001) and MgO(001) substrates, "
    Journal of Crystal Growth 322 (2011) 63.
  209. T. Sakurai, T. Ohashi, H. Kitazume, M. Kubota, T. Suemasu, and K. Akimoto,
    " Structural control of organic solar cells based on nonplanar metallophthalocyanine/C60 heterojunctions using organic buffer layers, "
    Organic Electronics 12 (2011) 966.
  210. K.Ito, G. H. Lee, K. Harada, M. Suzuno, T. Suemasu, Y. Takeda, Y. Saito, M. Ye, A. Kimura, and H. Akinaga,
    " Spin and orbital magnetic moments of molecular beam epitaxy γ'-Fe4N thin films on LaAlO3(001)and MgO(001) substrates by x-ray magnetic circular dichroism, "
    Applied Physics Letters 98 (2011) 102507.
  211. K. Akutsu, H. Kawakami, M. Suzuno, T. Yaguchi, K. Jiptner, J. Chen, T. Sekiguchi, T. Ootsuka, and T. Suemasu, ,
    " Minority-carrier diffusion length, minority-carrier lifetime, and photoresponsivity of β-FeSi2 layers grown by molecular-beam epitaxy, "
    Journal of Applied Physics 109 (2011) 123502.
  212. K. Toh, T. Saito, and T. Suemasu,
    " Optical absorption properties of BaSi2 epitaxial films grown on a transparent silicon-on-insulator substrate using molecular beam epitaxy,"
    Japanese Journal of Applied Physics 50 (2011) 068001. (JJAP Most Cited Article 2012, Top10.)
  213. M. Ajmal Khan, M. Takeishi, Y. Matsumoto, T. Saito, and T. Suemasu,
    " Al- and Cu-doped BaSi2 films on Si(111) substrate by molecular beam epitaxy and evaluation of depth profiles of Al and Cu atoms,"
    Physics Procedia 11 (2011) 11.
  214. A. Okada, R. Sasaki, Y. Matsumoto, M. Takeishi, T. Saito, K. Toh, N. Usami, and T. Suemasu,
    " Formation of poly-Si layers on AZO/SiO2 substrates and anti-reflection coating with AZO films for BaSi2 solar cells,"
    Physics Procedia 11 (2011) 31.
  215. K. Toh, T. Saito, M. Ajmal Khan, A. Okada, N. Usami, and T. Suemasu,
    " Fabrication of BaSi2 films on transparent CaF2 substrates by molecular beam epitaxy for optical characterization,"
    Physics Procedia 11 (2011) 189.
  216. M. Takeishi, Y. Matsumoto, R. Sasaki, T. Saito, and T. Suemasu,
    " Growth of Al-doped p-type BaSi2 films by molecular beam epitaxy and the effect of high-temperature annealing on their electrical properties,"
    Physics Procedia 11 (2011) 27.
  217. G. H. Lee, K. Ito, and T. Suemasu,
    " Toward the epitaxial growth of ferromagnetic γ'-Fe4N on Si(100) substrate by molecular beam epitaxy,"
    Physics Procedia 11 (2011) 193.
  218. K. Harada, K. S. Makabe, H. Akinaga, and T. Suemasu,
    " Magnetoresistance characteristics of Fe3Si/CaF2/Fe3Si heterostructures grown on Si(111) by molecular beam epitaxy,"
    Physics Procedia 11 (2011) 15.
  219. K. Akutsu, M. Suzuno, H. Kawakami, and T. Sueamsu,
    " Reduction of carrier concentraion of β-FeSi2 films by atomic hydrogen-assisted molecular beam epitaxy,"
    Physics Procedia 11 (2011) 19.
  220. H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, Y. Fuxing, T. Sekiguchi, and T. Sueamsu,
    " Molecular beam epitaxy of β-FeSi2 films on Si(111) substrates and its influence on minority-carrier diffusion length of Si measured by EBIC,"
    Physics Procedia 11 (2011) 23.
  221. H. Kawakami, M. Suzuno, K. Akutsu, J. Chen, K. Jiptner, T. Sekiguchi, and T. Suemasu,
    " Effect of introducing β-FeSi2 template layers on defect density and minority carrier diffusion length in Si region nearby p-β-FeSi2/n-Si heterointerface,"
    Japanese Journal of Applied Physics 50 (2011) 041303.
  222. Mina Jung, A. Okada, T. Saito, T. Suemasu, Chan-Yeup Chung, Y. Kawazoe, and N. Usami,
    " In situ Observation of Polycrystalline Si Thin Films Grown Using Al-Doped Zinc Oxide on Glass Substrate by the Aluminum-induced Crystallization,
    Japanese Journal of Applied Physics 50 (2011) 04DP02.
  223. T. Suemasu, T. Saito, K. Toh, A. Okada, and M. Ajmal Khan,
    " Photoresponse properties of BaSi2 epitaxial films grown on the tunnel junction for high-efficiency thin-film solar cells, "
    Thin Solid Films 519 (2011) 8501.
  224. K. S. Makabe, M. Suzuno, K. Harada, T. Suemasu, and H. Akinaga,
    " Fabrication of Fe3Si/CaF2 heterostructures ferromagnetic resonant tunneling diode by selected-area molecular beam epitaxy,"
    Thin Solid Films 519 (2011)8509.
  225. M. Suzuno, K. Akutsu, H. Kawakami, K. Akiyama, and T. Suemasu,
    " Metalorganic chemical vapor deposition of β-FeSi2 and β-FeSi2 seed crystals formed on Si substrates,"
    Thin Solid Films 519 (2011) 8473.
  226. K. Ito, G. H. Lee, and T. Suemasu,
    " Epitaxial growth of ferromagnetic Fe4N thin films on SrTiO3(001) substrates by molecular beam epitaxy,"
    Journal of Physics: Conference Series 266 (2011) 012091.
  227. K. Harada, K. S. Makabe, H. Akinaga, and T. Suemasu,
    " Room temperature magnetoresistance in Fe3Si/CaF2/Fe3Si MTJ epitaxially grown on Si(111),"
    Journal of Physics: Conference Series 266 (2011) 012088.
  228. 2010

  229. H. Suzuki, N. Usami, A. Nomura, T. Shishido, K. Nakajima, and T. Suemasu,
    " Impact of amorphous Ge thin layer at the amorphous Si/Al interface on Al-induced crystallization, "
    Journal of Crystal Growth 312 (2010) 3257.
  230. M. Jung, A. Okada, T. Saito, T. Suemasu, and N. Usami
    " On the Controlling Mechanism of Preferential Orientation of Polycrystalline-Si Thin Films Grown by Al-Induced Crystallization,"
    Applied Physics Express 3 (2010) 095803.
  231. T. Saito, Y. Matsumoto, R. Sasaki, M. Takeishi, and T. Suemasu,
    " Impact of thin island-like BaSi2 template on the formation of n+-BaSi2/p+-Si tunnel junction on Si(111) surface by molecular beam epitaxy,"
    Japanese Journal of Applied Physics 49 (2010) 068001.
  232. K. S. Makabe, M. Suzuno, K. Harada, H. Akinaga, and T. Suemasu,
    " Improved Reproducibility in CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics 49 (2010) 060212.
  233. M. Suzuno, T. Koizumi, H. Kawakami and T. Suemasu,
    " Enhanced Room-Temperature 1.6μm Electroluminescence from Si-Based Double Heterostructure Light-Emitting Diodes Using Iron Disilicide,"
    Japanese Journal of Applied Physics 49 (2010) 04DG16.
  234. Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, T. Saito, T. Suemasu, N. Usami, and M. Sasase,
    " Epitaxial Growth and Photoresponse Properties of BaSi2 Layers toward Si-Based High-Efficiency Solar Cells,"
    Japanese Journal of Applied Physics 49 (2010) 04DP05.
  235. T. Saito, Y. Matsumoto, M. Suzuno, M. Takeisi, R. Sasaki, T. Suemasu, and N. Usami
    " Fabrication of n+-BaSi2/p+-Si Tunnel Junction on Si(111) Surface by Molecular Beam Epitaxy for Photovoltaic Applications,"
    Applied Physics Express 3 (2010) 021301.
  236. 2009

  237. 末益崇,
    " シリサイド半導体(BaSi2)を用いたSi系薄膜結晶太陽電池を目指して,"
    金属 Vol. 79, No.11 (2009) 48-52.
  238. T. Saito, D. Tsukada, Y. Matsumoto, R. Takeishi, M. Takeisi, T. Ootsuka, and T. Suemasu,
    " Wet Chemical Etching and X-ray Photoelectron Spectroscopy Analysis of BaSi2 Epitaxial Films Grown by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics 48 (2009) 106507 (4 pages).
  239. K. Sadakuni, T. Harianto, H. Akinaga, and T. Suemasu,
    " CaF2/Fe3Si/CaF2 Ferromagnetic Resonant Tunneling Diodes on Si(111) by Molecular Beam Epitaxy, "
    Applied Physics Express 2 (2009) 063006.
  240. A. Narahara, K. Ito, T. Suemasu, Y. K. Takahashi, A. Ranajikanth, and K. Hono,
    " Spin polarization of Fe4N thin films determined by point-contact Andreev reflection,"
    Applied Physics Letters 94 (2009) 202502.
  241. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu,
    " Fabrication of (111)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application,"
    Journal of Crystal Growth 311 (2009) 3581.
  242. D. Tsukada, Y. Matsumoto, R. Sasaki, M. Takeishi, T. Saito, N. Usami, and T. Suemasu,
    " Photoresponse Properties of Polycrystalline BaSi2 Films Grown on SiO2 Substrates Using (111)-Oriented Si Layers by an Aluminum-induced Crystallization Method,"
    Applied Physics Express 2 (2009) 051601.
  243. M. Suzuno, T. Koizumi, and T. Suemasu,
    " p-Si/β-FeSi2/n-Si double-heterostructure light-emitting diodes achieving 1.6μm electroluminescence of 0.4 mW at room temperature,"
    Applied Physics Letters 94 (2009) 213509.
  244. 金子将士, 木下恭一, 末益崇, 小田原修, 依田眞一,
    " Traveling Liquidus-Zone (TLZ)法によ・關ャ長するバルクInGaAsの単結晶化初期状態の観察, "
    日本マイクログラビティ応用学会誌 Vol. 26, No.2 (解説) (2009) 95-99.
  245. A. Narahara, K. Ito, and T. Suemasu,
    " Growth of ferromagnetic Fe4N epitaxial layers and a-axis-oriented Fe4N/MgO/Fe magnetic tunnel junction on MgO(001) substrates using molecular beam epitaxy, "
    Journal of Crystal Growth 311 (2009) 1616.
  246. H. Junhua, T. Kurokawa, T. Suemasu, S. Takahara, M. Itakura, and H. Tatsuoka,
    " Growth of manganese silicide layers on Si substrates using MnCl2 source, "
    physica status solidi A 206 (2009) 233.
  247. Y. Warashina, Y. Ito, T. Nakamura, H. Tatsuoka, J. Snyder, M. Tanaka, T. Suemasu, Y. Anma, M. Shimomura, and Y. Hayakawa,
    " Growth of Ca-Germanide and Ca-Silicide Crystals by Mechanical Alloying, "
    e-Journal of Surface Science and Nanotechnology 7 (2009) 129-133.
  248. Y. Matsumoto, D. Tsukada, R. Sasaki, M. Takeishi, and T. Suemasu,
    " Photoresponse Properties of Semiconducting BaSi2 Epiaxial Films Grown on Si(111) Substrates by Molecular Beam Epitaxy, "
    Applied Physics Express 2 (2009) 021101.
  249. 2008

  250. T. Sato, Y. Kondo, T. Sekiguchi, and T. Suemasu,
    " Sb Surfactant Effect on Defect Evolution in Compressively Strained In0.80Ga0.20As Quantum Well on InP Grown by Metalorganic Vapor Phase Epitaxy,"quot;
    Applied Physics Express 1 (2008) 111202.
  251. T. Harianto, K. Sadakuni, H. Akinaga and T. Suemasu,
    " Fabrication and Current-Voltage Characteristics of Fe3Si/CaF2/Fe3Si Magnetic Tunnel Junction,"
    Japanese Journal of Applied Physics 47 (2008) 6310-6311.
  252. Y. Ichikawa, M. Kobayashi, M. Sasase, and T. Suemasu,
    " Molecular beam epitaxy of semiconductor(BaSi2)/metal(CoSi2) hybrid structures on Si(111) substrates for photovoltaic application,"
    Applied Surface Science 254 (2008) 7963-7967.
  253. T. Ootsuka, T. Suemasu, J. Chen, T. Sekiguchi, and Y. Hara,
    " Lifetime and diffusion length of photogenerated minority carriers in single-crystalline β-FeSi2 bulk,"
    Applied Physics Letters 92 (2008) 192114 (3 pages).
  254. M. Kobayashi, Y. Matsumoto, Y. Ichikawa, D. Tsukada, and T. Suemasu,
    " Control of Electron and Hole Concentrations in Semiconducting Silicide BaSi2 with Impurities Grown by Molecular Beam Epitaxy ,"
    Applied Physics Express 1 (2008) 051403 (3 pages).
  255. T. Koizumi, S. Murase, M. Suzuno, and T. Suemasu,
    " Room-temperature 1.6μm Electroluminescence from p+-Si/β-FeSi2/n+-Si Diodes on Si(001) without High-temperature Annealing,"
    Applied Physics Express 1 (2008) 051405 (3 pages).
  256. M. Suzuno, S. Murase, T. Koizumi, and T. Suemasu,
    " Improved Room-Temperature 1.6μm Electroluminescence from p-Si/β-FeSi2/n-Si Double Heterostructures Light-Emitting Diodes ,"
    Applied Physics Express 1 (2008) 021403 (3 pages).
  257. T. Suemasu, M. Sasase, Y. Ichikawa, M. Kobayashi, and D. Tsukada,
    " Semiconductor(BaSi2)/metal(CoSi2) Schottky-barrier structures epitaxially grown on Si(111) substrates by molecular beam epitaxy,"
    Journal of Crystal Growth 310 (2008) 1250-1255.
  258. T. Ootsuka, T. Suemasu, J. Chen, and T. Sekiguchi,
    " Evaluation of minority-carrier diffusion length in n-type β-FeSi2 single crystals by electron-beam-induced current,"
    Applied Physics Letters 92 (2008) 042117 (3 pages).
  259. 2007

  260. M. Suzuno, Y. Ugajin, S. Murase, T. Suemasu, M. Uchikoshi, and M. Isshiki,
    "Effect of using a high-purity Fe source on the transport properties of p-type β-FeSi2 grown by molecular-beam epitaxy, "
    Journal of Applied Physics 102 (2007) 103706 (5 pages).
  261. A. Narahara, K. Yamaguchi, and T. Suemasu,
    "Growth of highly oriented crystalline α-Fe/AlN/Fe3N trilayer structures on Si(111) substrates by molecular beam epitaxy, "
    Journal of Crystal Growth 309 (2007) 25-29.
  262. A. Narahara and T. Suemasu,
    " Growth of Nitride-Based Fe3N/AlN/Fe4N Mangetic Tunnel Junction Structures on Si(111) Substrates,"
    Japanese Journal of Applied Physics Vol. 46, No. 37 (2007) L892-L894 (Express Letter).
  263. T. Ootsuka, Y. Fudamoto, M. Osamura, T. Suemasu, Y. Makita, Y. Fukuzawa, and Y. Nakayama,
    " Photoresponse properties of Al/n-β-FeSi2 Schottky diodes using β-FeSi2 single crystals,"
    Applied Physics Letters 91 (2007) 142114 (3 pages).
  264. T. Harianto, K. Kobayashi, T. Suemasu, and H. Akinaga,
    " Epitaxial Growth and Magnetic Properties of Fe3Si/CaF2/Fe3Si Tunnel Junction Structures on CaF2/Si(111),"
    Japanese Journal of Applied Physics Vol. 46, No. 37 (2007) L904-L906.
  265. T. Suemasu, Y. Ugajin, S. Murase, T. Sunohara, and M. Suzuno,
    "Photoluminescence decay time and electroluminescence of p-Si/βbeta;-FeSi2 particles/n-Si and p-Si/β-FeSi2 film/n-Si double-heterostructures light-emitting diodes grown by molecular-beam epitaxy,"
    Journal of Applied Physics 101 (2007) 124506 (6 pages).
  266. 末益 崇、今井庸二,
    "多元系シリサイドの新展開 -半導体BaSi2を例に-,"
    応用物理第76巻, 第3号 (最近の展望) (2007) 264-268.
  267. T. Suemasu, K. Morita, and M. Kobayashi,
    "Molecular beam epitaxy of band-gap-tunable ternary semiconducting silicide Ba1-xSrxSi2 for photovoltaic application,"
    Journal of Crystal Growth 301 (2007) 680-683.
  268. K. Yamaguchi, T. Yui, K. Yamaki, I. Kakeya, K. Kadowaki, and T. Suemasu,
    " Epitaxial Growth of Ferromagnetic Fe3N Films on Si (111) substrates by Molecular Beam Epitaxy,"
    Journal of Crystal Growth 301-302 (2007) 597-601.
  269. S. Murase, T. Sunohara, and T. Suemasu,
    " Epitaxial growth and luminescence characterization of Si/β-FeSi2/Si multilayered structures by molecular beam epitaxy,"
    Journal of Crystal Growth 301-302 (2007) 676-679.
  270. T. Wakayama, T. Suemasu, M. Yamazaki, T. Kanazawa, and H. Akinaga,
    " Inductively coupled plasma-reactive ion etching for β-FeSi2 film, "
    Thin Solid Films 515 (2007) 8166-8168.
  271. K. Morita, M. Kobayashi and T. Suemasu,
    " Effect of Sr addition on crystallinity and optical absorption edges in ternary semiconducting silicide Ba1-xSrxSi2, "
    Thin Solid Films 515 (2007) 8216-8218.
  272. Y. Ugajin, T. Sunohara and T. Suemasu,
    " Investigation of current injection in β-FeSi2/Si double-heterostructures light-emitting diodes by molecular beam epitaxy,"
    Thin Solid Films 515 (2007) 8136-8139.
  273. K. Kobayashi, T. Suemasu, N. Kuwano, D. Hara, and H. Akinaga,
    " Epitaxial growth of Fe3Si/CaF2/Fe3Si magnetic tunnel junction structures on CaF2/Si(111) by molecular beam epitaxy,"
    Thin Solid Films 515 (2007) 8254-8258.
  274. M. Kobayashi, K. Morita, and T. Suemasu,
    "Growth and characterization of group-III impurity-doped semiconducting BaSi2 films grown by molecular beam epitaxy, "
    Thin Solid Films 515 (2007) 8242-8245.
  275. M. Okubo, T. Ohishi, A. Mishina, I. Yamauchi, H. Udono, T. Suemasu, T.Matsuyama, and H. Tatsuoka,
    "Preparation of β-FeSi2 Substrates by Molten Salt Method, "
    Thin Solid Films515 (2007) 8268-8271.
  276. T.Suemasu, Y. Ugajin, K. Morita, S. Murase, M. Kobayashi, Y. Ichikawa, and M. Suzuno,
    "Semiconducting silicide photonic devices, "
    Proceedings of SPIE 6775 (2007) 19.
  277. T. Suemasu, Cheng. Li, T. Sunohara, Y. Ugajin, K. Kobayashi, S. Murase, and F. Hasegawa
    "Epitaxial Growth and Luminescence Characterization of Si-based Double Heterostructures Light-emitting Diodes with Iron Disilicide Active Region, "
    Proceedings of MRS 2006 Fall Meetings 958, 3-12.
  278. K. Akiyama, S. Kaneko, T. Kiguchi, T. Suemasu, T. Kimura, and H. Funakubo,
    "Crystal Growth of β-FeSi2 Thin Film on (100), (110) and (111) Plane of Si and Yittria-stabilized Zirconia Substrates, "
    Proceedings of MRS 2006 Fall Meetings 980, 351-356.
  279. 2006

  280. K. Akiyama, S. Kaneko, Y. Hirabayashi, T.Suemasu,, and H. Funakubo,
    "Horizontal growth of epitaxial (100) β-FeSi2 templates by metal-organic chemical vapor deposition,"
    Journal of Crystal Growth 287 (2006) 694-697.
  281. Cheng Li, T.Suemasu and F. Hasegawa,
    "Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region,"
    Journal of Luminescence 118 (2006) 330-334.
  282. Cheng Li, Hongkai Laia, Songyan Chena, T. Suemasu, and F. Hasegawa,
    "Improvement of luminescence from β-FeSi2 particles embedded in silicon, with high temperature silicon buffer layer, "
    Journal of Crystal Growth 290 (2006) 176-179.
  283. K. Morita, M. Kobayashi, and T. Suemasu,
    "Optical Absorption Edge of Ternary Semiconducting Silicide Ba1-xSrxSi2,"
    Japanese Journal of Applied Physics Vol. 45, No. 14 (2006) L390-L392.
  284. T. Suemasu, K. Morita, M. Kobayashi, M. Saida, and M. Sasaki,
    "Band Diagrams of BaSi2/Si Structure by Kelvin Probe and Current-Voltage Characteristics ,"
    Japanese Journal of Applied Physics Vo.45, No. 20 (2006) L519-L521.
  285. T. Sunohara, K. Kobayashi, and T. Suemasu,
    "Epitaxial growth and characterization of Si-based light-emitting Si/β-FeSi2/Si double heterostructures on Si(001) substrates by molecular beam epitaxy,"
    Thin Solid Films 508 (2006) 371-375.
  286. K. Morita, Y. Inomata, and T. Suemasu,
    "Optical and electrical properties of semiconducting BaSi2 thin films on Si substrates grown by molecular beam epitaxy,"
    Thin Solid Films 508 (2006)363-366.
  287. Y. Ugajin, M. Takauji and T. Suemasu,
    "Annealing temperature dependence of EL properties of Si/β-FeSi2/Si(111) double-heterostructures light-emitting diodes,"
    Thin Solid Films 508 (2006) 376-379.
  288. K. Kobayashi, T. Sunohara, M. Umada, H. Yanagihara, E. Kita, and T. Suemasu,
    "Epitaxial growth of Fe3Si/CaF2/Si(111) hybrid structures by molecular beam epitaxy,"
    Thin Solid Films 508 (2006) 78-81.
  289. T. Wakayama, T. Suemasu, T. Kanazawa, and H. Akinaga,
    "Reactive ion etching of β-FeSi2 with inductively coupled plasma,"
    Japanese Journal of Applied Physics Vol. 45, No. 22 (2006) L569-L571.
  290. K.Yamaguchi, T.Yui, Y.Ichikawa, K.Yamaki, I.Kakeya, K.Kadowaki, and T.Suemasu,
    "Epitaxial Growth and Magnetic Properties of Ferromagnetic Fe3N on Si(111) by Molecular Beam Epitaxy Using AlN/3C-SiC Intermediate Layers,"
    Japanese Journal of Applied Physics Vol. 45, No. 27 (2006) L705-L707.
  291. Cheng Li, Hongkai Lai, Songyan Chen, T. Suemasu, and F. Hasegawa,
    "Temperature dependence of electroluminescence from silicon p-i-n light-emitting diodes,"
    Journal of Applied Physics Vol. 100 (2006) 023506 (4 pages).
  292. 2005

  293. M. Takauji, C. Li, T. Suemasu, and F. Hasegawa,
    "Fabrication of p-Si/β-FeSi2/n-Si Double-Heterostructure Light-Emitting Diode by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol. 44, No.4B (2005) 2483-2486.
  294. K. Takakura, H. Ohyama, K. Takarabe, T. Suemasu, and F. Hasegawa,
    "Hole mobility of p-type β-FeSi2 thin films grown from Si/Fe multi-layers,"
    Journal of Applied Physics Vol. 97 (2005) 093716.
  295. K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki, and F. Hasegawa,
    "Cr concentration dependence of magnetic and electical properties of Cr-doped GaN films on Si(111) by MOMBE,"
    phys. stat. sol. (c) 2, No.7 (2005) 2488-2491.
  296. C.Li, T. Suemasu and F. Hasegawa,
    "Room-temperature electroluminescence of a Si-based p-i-n diode with β-FeSi2 particles embedded in the intrinsic silicon,"
    Journal of Applied Physics Vol. 97 (2005) 043529.
  297. T. Sunohara, K. Kobayashi, M. Umada, H. Yanagihara, E. Kita, H. Akinaga, and T. Suemasu,
    "Epitaxial Growth of Ferromagnetic Fe3Si Films on CaF2/Si(111) by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol.44, No.22 (2005) L715-L717.
  298. T. Sunohara, C. Li, Y. Ozawa, T. Suemasu, and F. Hasegawa,
    "Growth and Characterization of Si-Based Light-Emitting Diode with β-FeSi2-Particles/Si Multilayered Active Region by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol.44, No.6A (2005) 3951-3953.
  299. K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki, and F. Hasegawa,
    "Magneto-optical studies of ferromagnetic Cr-doped GaN films grown by molecular beam epitaxy,"
    Japanese Journal of Applied Physics Vo. 44, No. 9A (2005) 6510-6512.
  300. 末益 崇,
    "シリサイド半導体の応用,"
    機能材料 Vol.25, No.10 (2005) 54-60.
  301. 2004

  302. M. Suzuki, T. Sato, T. Suemasu, and F. Hasegawa,
    "Tolerance of GaAs as an original substrate for HVPE growth of free standing GaN,"
    phys. stat. sol. (a) 201, No. 12 (2004) 2782-2785.
  303. K. Yamaguchi, H. Tomioka, T. Yui, T. Suemasu, K. Ando, R. Yoshizaki, and F. Hasegawa,
    "Disagreement between Magnetic and Magneto-Optical Properties in Cr-Doped GaN Films on Si(111) Substrates by Metal Organic Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol.43, No. 10A (2004) L1312 -L1314.
  304. M.Takauji, N.Seki, T.Suemasu, F.Hasegawa, and M.Ichida,
    "Growth of Si/β-FeSi2/Si double-heterostructure on Si(111) substrates by molecular-beam epitaxy and photoluminescence using time-resolved measurements,,"
    Journal of Applied Physics Vol. 96, No. 5 (2004) 2561-2565.
  305. T.Saito, T.Sueamsu, K.Yamaguchi, K.Mizushima, and F.Hasegawa,
    "Molecular Beam Epitaxy of Highly [100]-Oriented β-FeSi2 Films on Lattice-Matched Strained-Si(001) Surface Using Si0.7Ge0.3 Layers,"
    Japanese Journal of Applied Physics Vol. 43, No. 7B (2004) L957-L959.
  306. Y.Mori, Y.Sumida, K.Takarabe, T.Suemasu, F.Hasegawa, H.Udono, and I.Kikuma,
    "Reflection and absorption spectra of β-FeSi2 under pressure,"
    Thins Solid Films, Vol. 461 (2004) 171-173.
  307. T. Suemasu, K. Takakura, C. Li, Y. Ozawa, Y. Kumagai, and F Hasegawa,
    "Epitaxial growth of semiconducting β-FeSi2 and its application to light-emitting diodes,"
    Thin Solid Films, Vol. 461 (2004) 209-218.
  308. Y.Inomata, T.Nakamura, T.Suemasu, and F.Hasegawa,
    "Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by reactive deposition epitaxy,"
    Japanese Journal of Applied Physics Vol.43, No. 7A (2004) 4155-4156.
  309. T.Suemasu, M.Takauji, Cheng Li, Y.Ozawa, M.Ichida, and F.Hasegawa,
    "Time-Resolved Photoluminescence Study of Si/β-FeSi2/Si Structures Grown by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics 43, No. 7A (2004) L930-L933.
  310. Y.Inomata, T.Suemasu, T.Izawa, and F.Hasegawa,
    "Epiaxial Growth of Si-Based Ternary Alloy Semiconductor Ba1-xSrxSi2 Films on Si(111) Substrates by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol.43, 6B (2004) L771-L773.
  311. Y.Ozawa, T.Ohtsuka, Cheng Li, T.Suemasu, and F.Hasegawa,
    "Influence of β-FeSi2 particle size and Si growth rate on 1.5μm photoluminescence from Si/β-FeSi2-particles/Si structures grown by molecular-beam epitaxy,"
    Journal of Applied Physics Vol.95, No.10 (2004) 5483.
  312. K.Akiyama, T.Kimura, T.Suemasu, F.Hasegawa, Y.Maeda, and H.Funakubo,
    "Growth of Epitaxial β-FeSi2 Thin Film on Si(001) by Metal-Organic Chemical Vapor Deposition,"
    Japanese Journal of Applied Physics Vol.43, No.4B (2004) L551-L553.
  313. Y.Inomata, T.Nakamura, T.Suemasu, and F.Hasegawa,
    "Epitaxial growth of semiconducting BaSi2 thin films on Si(111) substrates by molecular beam epitaxy,"
    Japanese Journal of Applied Physics Vol.43, No.4A (2004) L478-L481.
  314. K.Yamaguchi, H.Tomioka, T.Sato, R.Souda, T.Suemasu, and F.Hasegawa,
    "Influence of AlN Growth Conditions on the Polarity of GaN Grown on AlN/Si(111) by Metalorganic Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol. 43, No.2A (2004) L151-L153.
  315. C.Li, Y.Ozawa, T.Suemasu, and F.Hasegawa,
    "Thermal Enhancement of 1.6μm Electroluminescence from a Si-Based Light-Emiiting Diode with β-FeSi2 Active Region,"
    Japanese Journal of Applied Physics Vol. 43, No. 11B (2004) L1492 - L1494.
  316. 2003

  317. N.Seki, K.Takakura, T.Suemasu, and F.Hasegawa:
    "Conduction type and defect levels of β-FeSi2 films grown by MBE with different Si/Fe ratios,"
    Materials Science in Semicondutor Processing Vol.6, Nos.5-6 (2003) 307-309.
  318. Cheng Li, T.Ohtsuka, Y.Ozawa, T.Suemasu, and F.Hasegawa:
    "Influence of boron-doped Si cap layer on the photoluminescence of β-FeSi2 particles embedded in Si matrix,"
    Journal of Applied Physics Vol.94, No.3 (2003) 1518-1520.
  319. 末益崇、長谷川文夫
    "シリサイド系半導体LED 光インターコネクション用光源を目指して "
    オプトロ二クス(解説)第22巻, 第261号 (2003) 137-144.
  320. T.Suemasu, K.Yamaguchi, H.Tomioka, and F.Hasegawa:
    "Room-temperature ferromagnetism in Cr-doped GaN films grown by MOMBE on GaAs(111)A substrates,"
    phys. status solidi (c) 0, No.7 (2003) 2860-2863.
  321. 2002

  322. M.Namerikawa, T.Sato, O.Takahashi, T.Suemasu, and F.Hasegawa:
    "Growth parameter dependence of HVPE GaN and polarity and crystal quality of the grown layers,"
    Journal of Crystal Growth 237-239 (2002) 1089-1093.
  323. K.Takakura, N.Seki, T.Suemasu, and F.Hasegawa:
    "Comparison of donor and acceptor levels in undoped, high quality β-FeSi2 films grown by MBE and multi-layer method"
    International Journal of Modern Physics B 16 (2002) 4314-4317.
  324. T.Nakamura, T.Suemasu, K.Takakura, F.Hasegawa, A.Wakahara, and M.Imai:
    "Investigation of the energy band structure of orthorhombic BaSi2 by optical and electrical measurements and theoretical calculations,"
    Applied Physics Letters Vol.81, No.6 (2002) 1032-1034.
  325. 末益崇、長谷川文夫
    "環境に優しい光半導体 β-FeSi2 の現状と将来展望"
    まてりあ (解説) Vol.41, No.5 (2002) 342-347.
  326. 末益崇、長谷川文夫
    "鉄シリサイド光デバイスの最前線"
    マテリアルインテグレーション (解説) Vol.15, No.5 (2002) 13-18.
  327. K.Takarabe, R.Teranisi, J.Oinuma, Y.Mori, T.Suemasu, S.F.Chichibu, and F.Hasegawa:
    "Optical Absorption of β-FeSi2 Under Pressure,"
    Physical Review B Vol.65 (2002) 165215.
  328. K.Takakura, N.Hiroi, T.Suemasu, S.F.Chichibu, and F.Hasegawa:
    "Investigation of direct and indirect bandgaps of [100]-oriented nearly strain-free β-FeSi2 films grown by molecular-beam epitaxy,"
    Applied Physics Letters Vol.80, No.4 (2002) 556.
  329. 2001

  330. 知京豊裕、成毛環美、パールハット=アヘメト、朱敏、末益崇、長・J川文夫:
    "Si結晶中に埋込まれたFeSi2のTEM観察,"
    日本金属学会誌 "まてりあ" Vol.40, No.12 (2001) 1013.
  331. N.Hiroi, T.Suemasu, K.Takakura, N.Seki, and F.Hasegawa:
    "Direct Growth of [100]-Oriented High-Quality β-FeSi2 Films on Si(001) Substrates by Molecular Beam Epitaxy,"
    Japanese Journal of Applied Physics Vol.40, No.10A (2001) L1008-L1011.
  332. T.Suemasu, Y.Negishi, K.Takakura and F.Hasegawa, and T. Chikyow:
    "Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes,"
    Applied Physics Letters Vol.79, No.12 (2001) 1804-1806.
  333. K.Takarabe, R.Teranishi, J.Oinuma, Y.Mori, T.Suemasu, S.Chichibu, and F.Hasegawa:
    "Optical Absorption Spectra of β-FeSi2 under Pressure,"
    phys.stat.sol. (b) Vol.223 (2001) 259-263.
  334. 長谷川文夫、末益崇:
    "鉄シリサイドβ-FeSi2を活性領域とするSi系LEDの室温発光 -Si ICの光配線用光源を目指して-"
    真空ジャーナル(最新情報)No.75 (2001) 5-9.
  335. K.Takakura, T.Suemasu, and F.Hasegawa:
    "Donor and Acceptor Levels in Undoped β-FeSi2 Films Grown on Si(001) Substrates,"
    Japanese Journal of Applied Physics Vol.40, No.3B (2001) L249-L251.
  336. T.Suemasu, T.Fujii, K.Takakura, and F.Hasegawa:
    "Dependence of photoluminescence from β-FeSi2 and induced deep levels in Si on the size of β-FeSi2 balls embedded in Si,"
    Thin Solid Films Vol.381 (2001) 209-213.
  337. 2000

  338. T.Suemasu, Y.Negishi, K.Takakura, and F.Hasegawa:
    "Room Temperature 1.6μm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region,"
    Japanese Journal of Applied Physics Vol.39, No.10B (2000) L1013-L1015 (Express Letter). (JJAP Young Scientist Award 2001.)
  339. K.Takakura, T.Suemasu Y.Ikura, and F.Hasegawa:
    "Control of the Conduction Type of Nondoped High Mobility β-FeSi2 Films Grown from Si/Fe Multilayers by Change of Si/Fe Ratios,"
    Japanese Journal of Applied Physics Vol.39, No.8A (2000) L789-L781.
  340. 末益崇、長谷川文夫:
    "環境にやさしい直接・J移型半導体β-FeSi2の研究の現状と将来展望,"
    応用物理(解説)Vol.69, No.7 (2000) 804-810.
  341. K.Takakura, T.Suemasu, N.Hiroi, and F.Hasegawa:
    "Improvement of the Electrical Properties of β-FeSi2 Films on Si(001) by High-Temperature Annealing,"
    Japanese Journal of Applied Physics Vol.39, No.3A/B (2000) L233-L236.
  342. K.Takakura, T.Suemasu, and F.Hasegawa:
    "Growth of Mn Doped-β-FeSi2 Films on Si(001) Susbstrates by Reactive Deposition Epitaxy,"
    Thin Solid Films Vol.369, No.1-2 (2000) 253-256.
  343. T.Suemasu, Y.Iikura, K.Takakura, and F.Hasegawa:
    "Optimum annealing condition for 1.5μm photoluminescence from β-FeSi2 balls grown by reactive deposition epitaxy and embedded in Si crystals,"
    Journal of Luminescence Vol. 87-89, (2000) 528-531.
  344. 末益・秩A飯倉祐介、高倉健一郎、長谷川文夫:
    "分子線エピタキシー法によるβ-FeSi2球のSi中埋込み構造作製と高温アニールによる赤外フォトルミネッセンスの増大,"
    レーザー研究 Vol.28, No.2 (2000) 99-102.
  345. 末益崇、高倉健一郎、飯倉祐介、広井典良、長谷川文夫:
    "熱反応堆積法を利用した赤外発光β-FeSi2球及び高移動度β-FeSi2膜の作製:高温アニールによる特性改善,"
    材料科学(解説)Vol.37, No.1 (2000) 16-20.
  346. M.Sasaki, T.Nakayama, N. Shimoyama, T.Suemasu, and F. Hasegawa:
    "Superiority of an AlN Intermediate Layer for Heteroepitaxy of Hexagonal GaN,"
    Japanese Journal of Applied Physics Vol.39 (2000) 4869-4874.
  347. F.Hasegawa, M.Minami, and T.Suemasu:
    "One possibility of obtaining bulk GaN: halide VPE growth at 1000oC on GaAs(111) substrates,"
    IEICE Trans. Electron. Vol.E83-C, NO.4, invited, (2000) 633-638.
  348. M.Sasaki, S.Yonemura, T.Nakayama, N.Shimoyama, T.Suemasu, and F.Hasegawa:
    "CBE growth of GaN on GaAs(001) and (111)B substrates using monomethylhydrazine,"
    Journal of Crystal Growth Vol.209, No.2-3 (2000) 373-377.
  349. T.Suemasu, M. Sakai, and F.Hasegawa:
    "Optimum thermal-cleaning condition of GaAs surface with a superior arsenic source: trisdimethylamino-arsine,"
    Journal of Crystal Growth Vol.209, No.2-3 (2000) 267-271.
  350. 1999

  351. T.Suemasu, N.Hiroi, T.Fujii, K.Takakura, and F.Hasegawa:
    "Growth of Continuous and Highly (100)-oriented β-FeSi2 Films on Si(001) from Si/Fe multilayers with SiO2 Capping and Templates,"
    Japanese Journal of Applied Physics Vol.38, No.8A (1999) L878-L880.
  352. T.Suemasu, Y.Iikura, T.Fujii, K.Takakura, N.Hiroi, and F.Hasegawa:
    "Improvement of 1.5μm Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi2 Balls in Si by High Temperature Annealing,"
    Japanese Journal of Applied Physics Vol.38, No.6A/B (1999) L620-L622.
  353. T.Suemasu, T.Fujii, M. Tanaka, K.Takakura, Y.Iikura, and F.Hasegawa:
    "Fabrication of p-Si/β-FeSi2 Balls/n-Si Structures by MBE and their Electrical and Optical Properties,"
    Journal of Luminescence Vol.80 (1999) 473-477.
  354. F.Hasegawa, M.Minami, K.Sunaba, and T.Suemasu:
    "Thick GaN growth on GaAs(111) substrates at 1000oC with HVPE,"
    Phys.Stat.Sol.(a) Vol.176 (1999) 421-424.
  355. F.Hasegawa, M.Minami, K.Sunaba, and T.Suemasu:
    "Thick and Smooth Hexagonal GaN Growth on GaAs (111) Substrates at 1000oC with Halide Vapor Phase Epitaxy,"
    Japanese Journal of Applied Physics Vol.38, No.7A (1999) L700-L702.
  356. 1998

  357. T.Suemasu, T.Fujii, Y.Iikura, K.Takakura, and F.Hasegawa:
    "Photoluminescence from Reactive Deposition Epitaxy (RDE) Grown β-FeSi2 Balls Embedded in Si Crystals,"
    Japanese Journal of Applied Physics Vol.37, No.12B (1998) L1513-L1516.
  358. T.Suemasu, K.Takakura, M.Tanaka, T.Fujii, and F.Hasegawa:
    "Magnetotransport Properties of a Single-Crystalline β-FeSi2 Layer Grown on Si(001) Substrate by Reactive Deposition Epitaxy,"
    Japanese Journal of Applied Physics Vol.37, No.3B (1998) L333-L335.
  359. 末益崇、長谷川文夫: "RDE法によるSi/ β-FeSi2 /Si構造の作製,"
    結晶成長学会誌(解説)Vol.25, No.1 (1998) 46-54.
  360. S.Yonemura, T.Yaguchi, H.Tsuchiya, N.Shimoyama, T.Suemasu, and F.Hasegawa:
    "Comparison between monomethyl hydrazine and ECR plasma activated nitrogen as a nitrogen source for CBE growth of GaN,"
    Journal of Crystal Growth 188 (1998) 81-85.
  361. H.Tsuchiya, K.Sunaba, M.Minami, T.Suemasu, and F.Hasegawa:
    "Influence of As Autodoping from GaAs Substrates on Thick Cubic GaN Growth by Hydride Vapor Phase Epitaxy,"
    Japanese Journal of Applied Physics Vol.37, No.5B (1998) L568-L570.
  362. H.Tsuchiya, K.Sunaba, T.Suemasu, and F.Hasegawa:
    "Growth condition dependence of GaN crystal structure on (001) GaAs by hyride vapor-phase epitaxy,"
    Journal of Crystal Growth 189/190(1998) 395-400.
  363. T.Yaguchi, S.Yonemura, H.Tsuchiya, N.Shimoyama, T.Suemasu, and F.Hasegawa:
    "Dependence of GaN MOMBE growth on nitrogen source: ECR plasma gun structure and monomethyl-hydrazine,"
    Journal of Crystal Growth 189/190 (1998) 380-384.
  364. 1997

  365. T.Suemasu, M.Yamamoto, K.Takakura, Y.Kumagai, S. Hashimoto, and F.Hasegawa:
    "Si Molecular Beam Epitaxial Growth over an Atomic-Layer Boron Adsorbed Si(001) Substrate and its Electrical Properties,"
    Japanese Journal of Applied Physics Vol.36, No.12A (1997) 7146-7151.
  366. T.Suemasu, M.Tanaka, T.Fujii, S.Hashimoto, Y.Kumagai, and F.Hasegawa:
    "Aggregation of Monocrystalline β-FeSi2 by Annealing and by Si Overlayer Growth,"
    Japanese Journal of Applied Physics Vol.36, No.9A/B (1997) L1225-L1228.
  367. M.Tanaka, Y.Kumagai, T.Suemasu, and F.Hasegawa:
    "Formation of β-FeSi2 Layers on Si(001) Substrates,"
    Japanese Journal of Applied Physics Vol.36, No.6A (1997) 3620-3624.
  368. M.Tanaka, Y.Kumagai, T.Suemasu, and F.Hasegawa:
    "Reactive deposition epitaxial growth of β-FeSi2 layers on Si(001),"
    Applied Surface Science 117/118 (1997) 303-307.
  369. H.Tsuchiya, K.Sunaba, S.Yonemura, T.Suemasu, and F.Hasegawa:
    "Cubic Dominant GaN Growth on (001) GaAs Substrates by Hydride Vapor Phase Epitaxy,"
    Japanese Journal of Applied Physics Vol.36, No.1A/B (1997) L1-L3.
  370. 1996-1991

  371. K. Mori, W. Saito, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,
    "Room-temperature observation of multiple negative differential resistance in a metal (CoSi2)/insulator (CaF2) quantum interference transistor structure,"
    Physica B Vol. 227 (1996) 213-215.
  372. T. Suemasu, W. Saitoh, Y. Kohno, K. Mori, M. Watanabe, and M. Asada,
    "Transfer efficiency of hot electrons in a metal (CoSi2)/insulator (CaF2) quantum interference transistor,"
    Surf. Sci. Vol. 361/362 (1996) 209-212.
  373. M. Asada, M. Watanabe, T. Suemasu, Y. Kohno, and W. Saitoh,
    "Epitaxial growth of a metal (CoSi2)/insulator (CaF2) nanometer-thick heterostructure and its application to quantum-effect devices,"
    J. Vac. Sci. & Technol. A Vol. 13, No. 3 (1995) 623-628.
  374. W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,
    "Multiple Negative Differential Resistance due to Quantum Interference of Hot Electron Waves in Metal(CoSi2)/Insulator(CaF2) Heterostructures and Influence of Parasitic Elements,"
    Jpn. J. Appl. Phys. Vol. 34, No. 8B (1995) 4481-4484.
  375. W. Saitoh, T. Suemasu, Y. Kohno, M. Watanabe, and M. Asada,
    "Metal(CoSi2)/Insultor(CaF2) Hot Electron Transistor Fabricated by Electron-Beam Lithography on a Si Substrate,"
    Jpn. J. Appl. Phys. Vol. 34, No. 10A (1995) L1254-L1256.
  376. T. Suemasu, Y. Kohno, W. Saitoh, M. Watanabe, and M. Asada,
    "Theoretical and Measured Characteristics of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Transistors and the Influence of Parasitic Elements,"
    IEEE Trans. Electron Devices Vol. 42, No. 12 (1995) 2203-2210.
  377. T. Suemasu, Y. Kohno, W. Saitoh, N. Suzuki, M. Watanabe, and M. Asada,
    "Quantum Interference of Electron Wave in Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Hot Electron Transistor Structure,"
    Jpn. J. Appl. Phys. Vol. 33, No. 12B (1994) L1762-L1765.
  378. T. Suemasu, Y. Kohno, N. Suzuki, M. Watanabe, and M. Asada,
    "Different Characteristics of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Transistors Depending on Base Quantum-Well Layer,"
    IEICE Trans. Electron. Vol. E77-C, No. 9 (1994) 1450-1454.
  379. T. Suemasu, M. Watanabe, J. Suzuki, Y. Kohno, M. Asada, and N. Suzuki,
    "Metal(CoSi2) /Insulator(CaF2) Resonant Tunneling Diode,"
    Jpn. J.Appl. Phys. Vol. 33, No. 1A (1994) 57-65.
  380. M. Watanabe, T. Suemasu, S. Muratake, and M. Asada,
    "Negative differential resistance of metal(CoSi2)/insulator(CaF2) triple-barrier resonant tunneling diode,"
    Appl. Phys. Let. Vol. 62, No. 3 (1993) 300-302.
  381. T. Suemasu, M. Watanabe, M. Asada, and N. Suzuki,
    "Room Temperature Negative Differential Resistance of Metal(CoSi2)/Insulator(CaF2) Resonant Tunneling Diode,"
    Electron. Lett. Vol. 28, No. 15 (1992) 1432-1433.
  382. S. Muratake, M. Watanabe, T. Suemasu, and M. Asada,
    "Transistor Action of Metal(CoSi2)/Insulator(CaF2) Hot Electron Transistor Structure,"
    Electron. Lett. Vol. 28, No. 11 (1992) 1002-1003.
  383. M. Watanabe, S. Muratake, T. Suemasu, H. Fujimoto, S. Sakamori, M. Asada, and S. Arai,
    "Epitaxial Growth and Electrical Conductance of Metal(CoSi2)/Insulator(CaF2) Nanometer-Thick Layered Structures on Si(111),"
    J. Electron. Mater. Vol. 21, No. 8 (1992) 783-789.
  384. T.Suemasu, M.Watanabe, S.Muratake, M.Asada, and N.Suzuki,
    "Negative differential resistance in metal (CoSi2)/insulator (CaF2) resonant tunneling diode,"
    IEEE Trans. Electron Devices Vol. 39, No. 11 (1992) 2644.
  385. T. Suemasu, Y. Miyamoto, and K. Furuya,
    "Improvement of Regrown Interface in InP Organo-Metallic Vapor Phase Epitaxy,"
    Jpn. J.Appl. Phys. Vol. 30, No. 10A (1991) L1702-L1704.
  386. Y. Miyamoto, H. Hirayama, T. Suemasu, Y. Miyake, and S. Arai,
    " Improvement of Organometallic Vapor Phase Epitaxy Regrown GaInAs/InP Heterointerface by Surface Treatment,"
    Jpn. J.Appl. Phys. Vol. 30, No. 4B (1991) L672-L674.


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